| 10262905 |
Simplified multi-threshold voltage scheme for fully depleted SOI MOSFETs |
Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Qing Liu, Nicolas Loubet |
2019-04-16 |
$3,839,000 |
| 10186524 |
Fully depleted silicon-on-insulator (FDSOI) transistor device and self-aligned active area in FDSOI bulk exposed regions |
David Pritchard, Lixia Lei, Deniz E. Civay, Neha Nayyar |
2019-01-22 |
$29,264,000 |
| 10181522 |
Simplified gate to source/drain region connections |
Tuhin Guha Neogi, David Pritchard, Kasun Anupama Punchihewa |
2019-01-15 |
$34,514,000 |
| 10068806 |
Method, apparatus, and system for using a cover mask for enabling metal line jumping over MOL features in a standard cell |
David Pritchard, Tuhin Guha Neogi, David Doman |
2018-09-04 |
$11,646,000 |
| 9947590 |
Method, apparatus, and system for using a cover mask for enabling metal line jumping over MOL features in a standard cell |
David Pritchard, Tuhin Guha Neogi, David Doman |
2018-04-17 |
$7,065,000 |
| 9941301 |
Fully depleted silicon-on-insulator (FDSOI) transistor device and self-aligned active area in FDSOI bulk exposed regions |
David Pritchard, Lixia Lei, Deniz E. Civay, Neha Nayyar |
2018-04-10 |
$10,802,000 |
| 9666488 |
Pass-through contact using silicide |
Tuhin Guha Neogi, David Pritchard, Guillaume Bouche, David Doman |
2017-05-30 |
$11,286,000 |
| 9633911 |
Simplified multi-threshold voltage scheme for fully depleted SOI MOSFETs |
Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Qing Liu, Nicolas Loubet |
2017-04-25 |
$1,937,000 |
| 9373548 |
CMOS circuit having a tensile stress layer overlying an NMOS transistor and overlapping a portion of compressive stress layer |
Gen Pei, Johannes M. van Meer |
2016-06-21 |
$2,461,000 |
| 9219078 |
Simplified multi-threshold voltage scheme for fully depleted SOI MOSFETs |
Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Qing Liu, Nicolas Loubet |
2015-12-22 |
$2,572,000 |
| 9048136 |
SRAM cell with individual electrical device threshold control |
Randy W. Mann |
2015-06-02 |
$2,320,000 |
| 9029956 |
SRAM cell with individual electrical device threshold control |
Randy W. Mann |
2015-05-12 |
$2,250,000 |
| 8912603 |
Semiconductor device with stressed fin sections |
Frank Scott Johnson |
2014-12-16 |
$1,928,000 |
| 8404592 |
Methods for fabricating FinFET semiconductor devices using L-shaped spacers |
Frank Scott Johnson |
2013-03-26 |
$2,711,000 |
| 8193592 |
MOSFET with asymmetrical extension implant |
Frank Bin Yang, Andrew Waite |
2012-06-05 |
$2,975,000 |
| 8148214 |
Stressed field effect transistor and methods for its fabrication |
Andrew Waite |
2012-04-03 |
$10,732,000 |
| 8120120 |
Embedded silicon germanium source drain structure with reduced silicide encroachment and contact resistance and enhanced channel mobility |
Frank (Bin) Yang, Johan W. Weijtmans |
2012-02-21 |
$8,175,000 |
| 8039349 |
Methods for fabricating non-planar semiconductor devices having stress memory |
Michael Hargrove, Frank Scott Johnson |
2011-10-18 |
$1,986,000 |
| 8030144 |
Semiconductor device with stressed fin sections, and related fabrication methods |
Frank Scott Johnson |
2011-10-04 |
$5,077,000 |
| 7977174 |
FinFET structures with stress-inducing source/drain-forming spacers and methods for fabricating the same |
Frank Scott Johnson, Michael Hargrove |
2011-07-12 |
$3,059,000 |
| 7960229 |
Metal oxide semiconductor transistor with reduced gate height, and related fabrication methods |
Frank Bin Yang, Rohit Pal |
2011-06-14 |
$3,418,000 |
| 7910996 |
Semiconductor device and method of manufacturing a semiconductor device |
Paul R. Besser |
2011-03-22 |
$12,658,000 |
| 7893493 |
Stacking fault reduction in epitaxially grown silicon |
Yun-Yu Wang, Linda Black, Judson R. Holt, Woo-Hyeong Lee, Christopher D. Sheraw |
2011-02-22 |
|
| 7829401 |
MOSFET with asymmetrical extension implant |
Frank Bin Yang, Andrew Waite |
2010-11-09 |
$4,649,000 |
| 7674720 |
Stacking fault reduction in epitaxially grown silicon |
Yun-Yu Wang, Linda Black, Judson R. Holt, Woo-Hyeong Lee, Christopher D. Sheraw |
2010-03-09 |
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