| 12432968 |
Nanowire source/drain formation for nanosheet device |
Ruilong Xie, Julien Frougier, Alexander Reznicek |
2025-09-30 |
|
| 12431469 |
Vertically stacked FET with strained channel |
Shogo Mochizuki, Juntao Li |
2025-09-30 |
|
| 12426338 |
Buried power rail with robust connection to a wrap around contact |
Ruilong Xie, Julien Frougier, Chanro Park |
2025-09-23 |
|
| 12426314 |
Strain generation and anchoring in gate-all-around field effect transistors |
Julien Frougier, Sung-Dae Suk, Andrew M. Greene, Ruilong Xie |
2025-09-23 |
|
| 12419080 |
Semiconductor structure with wrapped-around backside contact |
Ruilong Xie, Chanro Park, Min Gyu Sung, Julien Frougier |
2025-09-16 |
|
| 12414352 |
Two-dimensional vertical fins |
— |
2025-09-09 |
|
| 12407532 |
Gain cell memory based physically unclonable function |
— |
2025-09-02 |
|
| 12402545 |
Stacked cross-point phase change memory |
Carl Radens, Ruilong Xie, Juntao Li |
2025-08-26 |
|
| 12402403 |
Air gap spacer for metal gates |
Marc A. Bergendahl, Fee Li Lie, Eric R. Miller, John R. Sporre, Sean Teehan |
2025-08-26 |
|
| 12396247 |
Work function metal patterning for nanosheet CFETs |
Ruilong Xie, Chen Zhang, Juntao Li |
2025-08-19 |
|
| 12396225 |
Method to release nano sheet after nano sheet fin recess |
Chanro Park, Ruilong Xie, Juntao Li, Choonghyun Lee |
2025-08-19 |
|
| 12389813 |
Resistive switching memory cell |
Julien Frougier, Ruilong Xie, Chanro Park |
2025-08-12 |
|
| 12389609 |
Circuit architecture using transistors with dynamic dual functionality for logic and embedded memory drivers |
Julien Frougier, Ruilong Xie, Heng Wu, Min Gyu Sung, Chanro Park |
2025-08-12 |
|
| 12382665 |
Increased gate length at given footprint for nanosheet device |
Ruilong Xie, Julien Frougier, Chanro Park |
2025-08-05 |
|
| 12382708 |
Vertical stacked nanosheet CMOS transistors with different work function metals |
Juntao Li, Ruilong Xie, Chanro Park |
2025-08-05 |
|
| 12382719 |
Power gating dummy power transistors for back side power delivery networks |
Tao Li, Ruilong Xie |
2025-08-05 |
|
| 12382662 |
Wrap-around-contact for 2D-channel gate-all-around field-effect-transistors |
Julien Frougier, Ruilong Xie, Chanro Park, Andrew Gaul |
2025-08-05 |
|
| 12376369 |
FinFET devices |
Veeraraghavan S. Basker, Theodorus E. Standaert, Junli Wang |
2025-07-29 |
|
| 12376503 |
Phase change material including deuterium |
Juntao Li, Arthur Roy Gasasira, LOUIS ZUOGUANG LIU, Amlan Majumdar |
2025-07-29 |
|
| 12369367 |
Bulk nanosheet with dielectric isolation |
Bruce B. Doris, Junli Wang |
2025-07-22 |
|
| 12369379 |
Nanosheet transistor |
Juntao Li, Heng Wu, Peng Xu |
2025-07-22 |
|
| 12363977 |
Forming dielectric sidewall and bottom dielectric isolation in Fork-FET devices |
Julien Frougier, Ruilong Xie, Dimitri Houssameddine |
2025-07-15 |
|
| 12356680 |
Nanosheet device with air-gaped source/drain regions |
Huimei Zhou, Yi Song, Ruilong Xie |
2025-07-08 |
|
| 12349457 |
Stacked transistors having bottom contact with replacement spacer |
Ruilong Xie, Julien Frougier, Heng Wu |
2025-07-01 |
|
| 12342738 |
Resistive memory for analog computing |
— |
2025-06-24 |
|
