Issued Patents All Time
Showing 1–25 of 262 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12431469 | Vertically stacked FET with strained channel | Kangguo Cheng, Juntao Li | 2025-09-30 |
| 12419079 | Field effect transistor with backside source/drain | Ruilong Xie, Lawrence A. Clevenger, Brent A. Anderson, Kisik Choi, Su Chen Fan +1 more | 2025-09-16 |
| 12402352 | Unipolar-FET implementation in stacked-FET CMOS | Gen Tsutsui | 2025-08-26 |
| 12396212 | Gate all-around device with through-stack nanosheet 2D channel | Tao Li, Ardasheir Rahman, Tsung-Sheng Kang | 2025-08-19 |
| 12279452 | Stacked complementary transistor structure for three-dimensional integration | Kangguo Cheng, Juntao Li | 2025-04-15 |
| 12268026 | High aspect ratio contact structure with multiple metal stacks | Junli Wang, Brent A. Anderson, Terence B. Hook, Indira Seshadri, Albert M. Young +2 more | 2025-04-01 |
| 12268020 | Source or drain template for reducing strain loss in spaced-apart nanosheet channels | Nicolas Loubet | 2025-04-01 |
| 12261173 | Semiconductor device with strained channel | Nicolas Loubet | 2025-03-25 |
| 12250835 | Isolation between vertically stacked nanosheet devices | Sanjay C. Mehta | 2025-03-11 |
| 12237325 | Three-dimensional field effect device | Huimei Zhou, Su Chen Fan, Peng Xu, Nicolas Loubet | 2025-02-25 |
| 12191208 | Dual strained semiconductor substrate and patterning | Kangguo Cheng, Juntao Li | 2025-01-07 |
| 12154985 | Moon-shaped bottom spacer for vertical transport field effect transistor (VTFET) devices | Ruilong Xie, Chen Zhang, Julien Frougier, Alexander Reznicek | 2024-11-26 |
| 12142636 | Sidewall epitaxy encapsulation for nanosheet I/O device | Ruqiang Bao | 2024-11-12 |
| 12132098 | Uniform interfacial layer on vertical fin sidewalls of vertical transport field-effect transistors | Choonghyun Lee, Kangguo Cheng, Juntao Li | 2024-10-29 |
| 12119346 | Vertical field-effect transistor with wrap-around contact structure | Kangguo Cheng, Juntao Li | 2024-10-15 |
| 12119264 | Non-step nanosheet structure for stacked field-effect transistors | Gen Tsutsui | 2024-10-15 |
| 12046673 | Vertical transistor and method of forming the vertical transistor | Fee Li Lie, Junli Wang | 2024-07-23 |
| 11996480 | Vertical transistor with late source/drain epitaxy | Kangguo Cheng, Juntao Li, Choonghyun Lee | 2024-05-28 |
| 11984493 | Formation of nanosheet transistor channels using epitaxial growth | Nicolas Loubet, Kirsten Emilie Moselund, Cezar Bogdan Zota | 2024-05-14 |
| 11978783 | Vertical fin field effect transistor devices with reduced top source/drain variability and lower resistance | Kangguo Cheng, Choonghyun Lee, Juntao Li | 2024-05-07 |
| 11923438 | Field-effect transistor with punchthrough stop region | Kangguo Cheng, Juntao Li, Choonghyun Lee | 2024-03-05 |
| 11848357 | Strained superlattice | Kangguo Cheng, Juntao Li | 2023-12-19 |
| 11837604 | Forming stacked nanosheet semiconductor devices with optimal crystalline orientations around devices | Kangguo Cheng, Juntao Li | 2023-12-05 |
| 11830946 | Bottom source/drain for fin field effect transistors | Heng Wu, Gen Tsutsui, Kangguo Cheng | 2023-11-28 |
| 11817502 | Three-dimensional field effect device | Huimei Zhou, Su Chen Fan, Peng Xu, Nicolas Loubet | 2023-11-14 |