Issued Patents All Time
Showing 51–75 of 262 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11088279 | Channel strain formation in vertical transport FETS with dummy stressor materials | Choonghyun Lee, Kangguo Cheng, Juntao Li | 2021-08-10 |
| 11069809 | Soi FinFET fins with recessed fins and epitaxy in source drain region | Alexander Reznicek, Veeraraghavan S. Basker, Nicolas L. Breil, Oleg Gluschenkov | 2021-07-20 |
| 11063147 | Forming bottom source and drain extension on vertical transport FET (VTFET) | Kangguo Cheng, Juntao Li, Choonghyun Lee | 2021-07-13 |
| 11011624 | Vertical transport field-effect transistor (VFET) with dual top spacer | Michael P. Belyansky, Choonghyun Lee | 2021-05-18 |
| 10985274 | Reduction of top source/drain external resistance and parasitic capacitance in vertical transistors | Choonghyun Lee, Kangguo Cheng, Juntao Li | 2021-04-20 |
| 10971626 | Interface charge reduction for SiGe surface | Devendra K. Sadana, Dechao Guo, Joel P. de Souza, Ruqiang Bao, Stephen W. Bedell +3 more | 2021-04-06 |
| 10971490 | Three-dimensional field effect device | Huimei Zhou, Su Chen Fan, Peng Xu, Nicolas Loubet | 2021-04-06 |
| 10957698 | Reduction of multi-threshold voltage patterning damage in nanosheet device structure | Choonghyun Lee, Kangguo Cheng, Juntao Li | 2021-03-23 |
| 10943835 | Fabrication of silicon germanium channel and silicon/silicon germanium dual channel field-effect transistors | Choonghyun Lee, Kangguo Cheng, Juntao Li | 2021-03-09 |
| 10930758 | Space deposition between source/drain and sacrificial layers | Kangguo Cheng, Juntao Li, Choonghyun Lee | 2021-02-23 |
| 10930567 | Maskless epitaxial growth of phosphorus-doped Si and boron-doped SiGe (Ge) for advanced source/drain contact | Choonghyun Lee, Chun Wing Yeung, Hemanth Jagannathan | 2021-02-23 |
| 10916638 | Vertical fin field effect transistor devices with reduced top source/drain variability and lower resistance | Kangguo Cheng, Choonghyun Lee, Juntao Li | 2021-02-09 |
| 10916633 | Silicon germanium FinFET with low gate induced drain leakage current | Kangguo Cheng, Choonghyun Lee, Juntao Li | 2021-02-09 |
| 10910494 | Method and structure for forming vertical transistors with various gate lengths | Kangguo Cheng, Choonghyun Lee, Juntao Li | 2021-02-02 |
| 10903339 | Vertical transport FET devices having a sacrificial doped layer | Choonghyun Lee, Kangguo Cheng, Juntao Li | 2021-01-26 |
| 10892368 | Nanosheet transistor having abrupt junctions between the channel nanosheets and the source/drain extension regions | Choonghyun Lee, Kangguo Cheng, Juntao Li | 2021-01-12 |
| 10886403 | Close proximity and lateral resistance reduction for bottom source/drain epitaxy in vertical transistor devices | Alexander Reznicek, Jingyun Zhang, Xin Miao | 2021-01-05 |
| 10840145 | Vertical field-effect transistor devices with non-uniform thickness bottom spacers | Juntao Li, Kangguo Cheng, Choonghyun Lee | 2020-11-17 |
| 10840360 | Nanosheet device with close source drain proximity | Veeraraghavan S. Basker, Alexander Reznicek | 2020-11-17 |
| 10832969 | Single-fin CMOS transistors with embedded and cladded source/drain structures | Xin Miao, Choonghyun Lee, Hemanth Jagannathan | 2020-11-10 |
| 10833192 | Substantially defect free relaxed heterogeneous semiconductor fins on bulk substrates | Veeraraghavan S. Basker, Oleg Gluschenkov, Alexander Reznicek | 2020-11-10 |
| 10818756 | Vertical transport FET having multiple threshold voltages with zero-thickness variation of work function metal | Choonghyun Lee, Kangguo Cheng, Juntao Li | 2020-10-27 |
| 10804270 | Contact formation through low-tempearature epitaxial deposition in semiconductor devices | Oleg Gluschenkov, Hiroaki Niimi, Tenko Yamashita, Chun-Chen Yeh | 2020-10-13 |
| 10784371 | Self aligned top extension formation for vertical transistors | Oleg Gluschenkov, Sanjay C. Mehta, Alexander Reznicek | 2020-09-22 |
| 10777659 | Self-aligned bottom source/drain epitaxial growth in vertical field effect transistors | Choonghyun Lee, Ruqiang Bao, Brent A. Anderson, Hemanth Jagannathan | 2020-09-15 |