Issued Patents All Time
Showing 25 most recent of 283 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12426228 | SRAM with staggered stacked FET | Kirsten Emilie Moselund, Bogdan Cezar Zota | 2025-09-23 |
| 12414328 | Co-integrating gate-all-around nanosheet transistors and comb-nanosheet transistors | Huimei Zhou, Julien Frougier, Ruilong Xie, Miaomiao Wang, Veeraraghavan S. Basker | 2025-09-09 |
| 12408368 | Method of making a semiconductor device using a dummy gate | Prasanna Khare | 2025-09-02 |
| 12402408 | Stacked FETS including devices with thick gate oxide | Ruilong Xie, Julien Frougier, Junli Wang, Ruqiang Bao, Min Gyu Sung +2 more | 2025-08-26 |
| 12336294 | Gate-cut and separation techniques for enabling independent gate control of stacked transistors | Ruilong Xie, Julien Frougier, Lawrence A. Clevenger, Prasad Bhosale, Junli Wang +2 more | 2025-06-17 |
| 12317555 | Gate-all-around nanosheet field effect transistor integrated with fin field effect transistor | Julien Frougier, Sagarika Mukesh, Ruqiang Bao, Andrew M. Greene, Jingyun Zhang +1 more | 2025-05-27 |
| 12310100 | Dielectric reflow for boundary control | Jing Guo, Ekmini Anuja De Silva, Indira Seshadri, Ruqiang Bao, Nelson Felix | 2025-05-20 |
| 12278234 | Multi-fin FINFET device including epitaxial growth barrier on outside surfaces of outermost fins and related methods | Qing Liu, Prasanna Khare | 2025-04-15 |
| 12268020 | Source or drain template for reducing strain loss in spaced-apart nanosheet channels | Shogo Mochizuki | 2025-04-01 |
| 12261173 | Semiconductor device with strained channel | Shogo Mochizuki | 2025-03-25 |
| 12237325 | Three-dimensional field effect device | Huimei Zhou, Su Chen Fan, Shogo Mochizuki, Peng Xu | 2025-02-25 |
| 12211936 | Strained-channel fin FETs | Pierre Morin | 2025-01-28 |
| 12191309 | Method to induce strain in finFET channels from an adjacent region | Pierre Morin | 2025-01-07 |
| 12166042 | Stacked nanosheet gate-all-around device structures | Huiming Bu, Balasubramanian Pranatharthiharan | 2024-12-10 |
| 12154971 | Forming nanosheet transistor using sacrificial spacer and inner spacers | Kangguo Cheng, Julien Frougier | 2024-11-26 |
| 12154945 | Backside CMOS trench epi with close N2P space | Tao Li, Ruilong Xie, Julien Frougier | 2024-11-26 |
| 12100746 | Gate-all-around field effect transistor with bottom dielectric isolation | Julien Frougier, Andrew M. Greene, Ruilong Xie, Maruf Amin Bhuiyan, Veeraraghavan S. Basker | 2024-09-24 |
| 12087691 | Semiconductor structures with backside gate contacts | Ruilong Xie, Julien Frougier, Veeraraghavan S. Basker, Lawrence A. Clevenger, Dechao Guo +3 more | 2024-09-10 |
| 12080709 | Dual inner spacer epitaxy in monolithic stacked FETs | Sagarika Mukesh, Julien Frougier, Ruilong Xie | 2024-09-03 |
| 12040373 | Liner-free resistance contacts and silicide with silicide stop layer | Christian Lavoie, Adra Carr, Nicholas Anthony Lanzillo | 2024-07-16 |
| 11984493 | Formation of nanosheet transistor channels using epitaxial growth | Shogo Mochizuki, Kirsten Emilie Moselund, Cezar Bogdan Zota | 2024-05-14 |
| 11948943 | Method to induce strain in FINFET channels from an adjacent region | Pierre Morin | 2024-04-02 |
| 11935929 | High aspect ratio shared contacts | Ruilong Xie, Julien Frougier, Su Chen Fan, Ravikumar Ramachandran | 2024-03-19 |
| 11894361 | Co-integrated logic, electrostatic discharge, and well contact devices on a substrate | Julien Frougier, Sagarika Mukesh, Anthony I. Chou, Andrew M. Greene, Ruilong Xie +4 more | 2024-02-06 |
| 11894436 | Gate-all-around monolithic stacked field effect transistors having multiple threshold voltages | Julien Frougier, Ruilong Xie, Andrew M. Greene, Veeraraghavan S. Basker, Balasubramanian Pranatharthiharan | 2024-02-06 |