Issued Patents All Time
Showing 26–50 of 283 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11817502 | Three-dimensional field effect device | Huimei Zhou, Su Chen Fan, Shogo Mochizuki, Peng Xu | 2023-11-14 |
| 11682715 | Forming nanosheet transistor using sacrificial spacer and inner spacers | Kangguo Cheng, Julien Frougier | 2023-06-20 |
| 11670554 | Method to co-integrate SiGe and Si channels for finFET devices | Prasanna Khare, Qing Liu | 2023-06-06 |
| 11639697 | Method for controlling an internal combustion engine | Yves Agnus, Henri Mouisse | 2023-05-02 |
| 11610886 | Multi-fin FINFET device including epitaxial growth barrier on outside surfaces of outermost fins and related methods | Qing Liu, Prasanna Khare | 2023-03-21 |
| 11605672 | Steep-switch field effect transistor with integrated bi-stable resistive system | Julien Frougier, Ruilong Xie, Daniel Chanemougame, Ali Razavieh, Kangguo Cheng | 2023-03-14 |
| 11587928 | Method to induce strain in finFET channels from an adjacent region | Pierre Morin | 2023-02-21 |
| 11575024 | Forming gate last vertical FET with self-aligned spacers and junctions | — | 2023-02-07 |
| 11575003 | Creation of stress in the channel of a nanosheet transistor | Tenko Yamashita, Guillaume Audoit, Nicolas Bernier, Remi Coquand, Shay Reboh | 2023-02-07 |
| 11569384 | Method to induce strain in 3-D microfabricated structures | Pierre Morin | 2023-01-31 |
| 11515392 | Semiconductor divice having a carbon containing insulation layer formed under the source/drain | Shay Reboh, Remi Coquand, Tenko Yamashita, Jingyun Zhang | 2022-11-29 |
| 11450755 | Electronic device including at least one nano-object | Shay Reboh, Emmanuel Augendre, Remi Coquand | 2022-09-20 |
| 11322408 | Forming shallow trench isolation regions for nanosheet field-effect transistor devices using sacrificial epitaxial layer | Richard A. Conti, Choonghyun Lee | 2022-05-03 |
| 11302812 | Semiconductor device with fin and related methods | Pierre Morin | 2022-04-12 |
| 11264286 | Co-integration of tensile silicon and compressive silicon germanium | Pierre Morin, Yann Mignot | 2022-03-01 |
| 11222981 | Three-dimensional field effect device | Huimei Zhou, Su Chen Fan, Shogo Mochizuki, Peng Xu | 2022-01-11 |
| 11183593 | Three-dimensional field effect device | Huimei Zhou, Su Chen Fan, Shogo Mochizuki, Peng Xu | 2021-11-23 |
| 11164782 | Self-aligned gate contact compatible cross couple contact formation | Ruilong Xie, Balasubramanian S. Pranatharthi Haran, Dechao Guo, Alexander Reznicek | 2021-11-02 |
| 11164958 | Nanosheet transistor having a strained channel with strain-preserving multi-segmented source/drain regions | Shogo Mochizuki, Zhenxing Bi, Richard A. Conti | 2021-11-02 |
| 11121233 | Forming nanosheet transistor using sacrificial spacer and inner spacers | Kangguo Cheng, Julien Frougier | 2021-09-14 |
| 11094823 | Stress induction in 3D device channel using elastic relaxation of high stress material | Kangguo Cheng, Xin Miao, Alexander Reznicek | 2021-08-17 |
| 11088247 | Method of fabrication of a semiconductor device including one or more nanostructures | Shay Reboh, Kangguo Cheng, Remi Coquand | 2021-08-10 |
| 11088026 | Wimpy device by selective laser annealing | Kangguo Cheng, Xin Miao, Alexander Reznicek | 2021-08-10 |
| 11081547 | Method for making superimposed transistors | Shay Reboh, Remi Coquand, Tenko Yamashita, Jingyun Zhang | 2021-08-03 |
| 11069744 | Steep-switch vertical field effect transistor | Daniel Chanemougame, Julien Frougier, Ruilong Xie | 2021-07-20 |