Issued Patents All Time
Showing 1–19 of 19 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12170315 | Field effect transistor with vertical nanowire in channel region and bottom spacer between the vertical nanowire and gate dielectric material | Haiting Wang | 2024-12-17 |
| 11967637 | Fin-based lateral bipolar junction transistor with reduced base resistance and method | Jagar Singh, Haiting Wang | 2024-04-23 |
| 11605672 | Steep-switch field effect transistor with integrated bi-stable resistive system | Julien Frougier, Nicolas Loubet, Ruilong Xie, Daniel Chanemougame, Kangguo Cheng | 2023-03-14 |
| 11462632 | Lateral bipolar junction transistor device and method of making such a device | Arkadiusz Malinowski, Alexander M. Derrickson, Halting Wang | 2022-10-04 |
| 11362177 | Epitaxial semiconductor material regions for transistor devices and methods of forming same | Arkadiusz Malinowski, Baofu Zhu, Frank W. Mont, Julien Frougier | 2022-06-14 |
| 11205699 | Epitaxial semiconductor material regions for transistor devices and methods of forming same | Arkadiusz Malinowski, Baofu Zhu, Frank W. Mont, Julien Frougier | 2021-12-21 |
| 11094794 | Air spacer structures | Julien Frougier, Haiting Wang | 2021-08-17 |
| 11049934 | Transistor comprising a matrix of nanowires and methods of making such a transistor | Julien Frougier, Bradley Morgenfeld | 2021-06-29 |
| 11043588 | Vertical field effect transistor | Ruilong Xie | 2021-06-22 |
| 10991808 | Steep-switch field effect transistor with integrated bi-stable resistive system | Julien Frougier, Nicolas Loubet, Ruilong Xie, Daniel Chanemougame, Kangguo Cheng | 2021-04-27 |
| 10964750 | Steep-switch field effect transistor with integrated bi-stable resistive system | Julien Frougier, Nicolas Loubet, Ruilong Xie, Daniel Chanemougame, Kangguo Cheng | 2021-03-30 |
| 10872962 | Steep-switch field effect transistor with integrated bi-stable resistive system | Julien Frougier, Nicolas Loubet, Ruilong Xie, Daniel Chanemougame, Kangguo Cheng | 2020-12-22 |
| 10818803 | Fin-type field-effect transistors including a two-dimensional material | Julien Frougier | 2020-10-27 |
| 10566436 | Steep-switch field effect transistor with integrated bi-stable resistive system | Julien Frougier, Nicolas Loubet, Ruilong Xie, Daniel Chanemougame, Kangguo Cheng | 2020-02-18 |
| 10256316 | Steep-switch field effect transistor with integrated bi-stable resistive system | Julien Frougier, Nicolas Loubet, Ruilong Xie, Daniel Chanemougame, Kangguo Cheng | 2019-04-09 |
| 10236292 | Complementary FETs with wrap around contacts and methods of forming same | Julien Frougier, Ruilong Xie, Puneet Harischandra Suvarna, Hiroaki Niimi, Steven Bentley | 2019-03-19 |
| 10192867 | Complementary FETs with wrap around contacts and method of forming same | Julien Frougier, Ruilong Xie, Puneet Harischandra Suvarna, Hiroaki Niimi, Steven Bentley | 2019-01-29 |
| 10170520 | Negative-capacitance steep-switch field effect transistor with integrated bi-stable resistive system | Julien Frougier, Nicolas Loubet, Ruilong Xie, Daniel Chanemougame, Kangguo Cheng | 2019-01-01 |
| 9991352 | Methods of forming a nano-sheet transistor device with a thicker gate stack and the resulting device | Julien Frougier, Ruilong Xie, Steven Bentley | 2018-06-05 |