Issued Patents All Time
Showing 25 most recent of 81 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12416530 | Temperature detection using negative temperature coefficient resistor in GaN setting | Santosh Sharma, Michael J. Zierak, Johnatan A. Kantarovsky | 2025-09-16 |
| 12417975 | Electrically programmable fuse over crystalline semiconductor materials | Johnatan A. Kantarovsky, Santosh Sharma, Michael J. Zierak, Ephrem G. Gebreselasie | 2025-09-16 |
| 12183814 | Multi-channel transistor | Francois Hebert, Lawrence Selvaraj Susai, Johnatan A. Kantarovsky, Michael J. Zierak, Mark D. Levy +1 more | 2024-12-31 |
| 11616127 | Symmetric arrangement of field plates in semiconductor devices | Johnatan A. Kantarovsky, Rajendran Krishnasamy, Siva P. Adusumilli, Michael J. Zierak, Jeonghyun Hwang | 2023-03-28 |
| 11569170 | Substrate with a buried conductor under an active region for enhanced thermal conductivity and RF shielding | Siva P. Adusumilli, Mark D. Levy, Ramsey Hazbun, Alvin J. Joseph | 2023-01-31 |
| 11515397 | III-V compound semiconductor layer stacks with electrical isolation provided by a trap-rich layer | Anthony K. Stamper, Siva P. Adusumilli, Vibhor Jain | 2022-11-29 |
| 11316019 | Symmetric arrangement of field plates in semiconductor devices | Johnatan A. Kantarovsky, Rajendran Krishnasamy, Siva P. Adusumilli, Michael J. Zierak, Jeonghyun Hwang | 2022-04-26 |
| 11217533 | Semiconductor device with metal structure under an active layer | Steven R. Soss, Julien Frougier | 2022-01-04 |
| 11201152 | Method, apparatus, and system for fin-over-nanosheet complementary field-effect-transistor | Ruilong Xie, Steven R. Soss, Daniel Chanemougame, Julien Frougier, Bipul C. Paul +1 more | 2021-12-14 |
| 11195761 | IC structure with short channel gate structure having shorter gate height than long channel gate structure | Haiting Wang, Hong Yu | 2021-12-07 |
| 11101348 | Nanosheet field effect transistor with spacers between sheets | Ruilong Xie, Julien Frougier, Nigel G. Cave, Steven R. Soss, Daniel Chanemougame +2 more | 2021-08-24 |
| 10797138 | Vertical-transport field-effect transistors with self-aligned contacts | Emilie Bourjot, Daniel Chanemougame | 2020-10-06 |
| 10685847 | Vertical nanowires formed on upper fin surface | Richard A. Farrell, Gerard Schmid, Ajey Poovannummoottil Jacob | 2020-06-16 |
| 10658243 | Method for forming replacement metal gate and related structures | Ruilong Xie, Daniel Chanemougame, Steven R. Soss, Chanro Park | 2020-05-19 |
| 10629500 | Product that includes a plurality of vertical transistors with a shared conductive gate plug | Steven R. Soss | 2020-04-21 |
| 10510620 | Work function metal patterning for N-P space between active nanostructures | Daniel Chanemougame, Steven R. Soss, Julien Frougier, Ruilong Xie | 2019-12-17 |
| 10497798 | Vertical field effect transistor with self-aligned contacts | Ruilong Xie, Puneet Harischandra Suvarna, Chanro Park, Min Gyu Sung, Lars Liebmann +2 more | 2019-12-03 |
| 10475904 | Methods of forming merged source/drain regions on integrated circuit products | Hiroaki Niimi, Romain Lallement, Brent A. Anderson, Junli Wang, Muthumanickam Sankarapandian | 2019-11-12 |
| 10461196 | Control of length in gate region during processing of VFET structures | Chanro Park, Ruilong Xie, Min Gyu Sung | 2019-10-29 |
| 10446659 | Negative capacitance integration through a gate contact | Rohit Galatage, Puneet Harischandra Suvarna | 2019-10-15 |
| 10446451 | Method for forming replacement gate structures for vertical transistors | Steven R. Soss | 2019-10-15 |
| 10418368 | Buried local interconnect in source/drain region | Bipul C. Paul, Steven R. Soss | 2019-09-17 |
| 10347745 | Methods of forming bottom and top source/drain regions on a vertical transistor device | Puneet Harischandra Suvarna, Daniel Chanemougame | 2019-07-09 |
| 10332969 | Negative capacitance matching in gate electrode structures | Rohit Galatage, Puneet Harischandra Suvarna, Zoran Krivokapic | 2019-06-25 |
| 10312154 | Method of forming vertical FinFET device having self-aligned contacts | Ruilong Xie, Puneet Harischandra Suvarna, Chanro Park, Min Gyu Sung, Lars Liebmann +2 more | 2019-06-04 |