Issued Patents All Time
Showing 25 most recent of 32 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11101348 | Nanosheet field effect transistor with spacers between sheets | Ruilong Xie, Julien Frougier, Steven R. Soss, Daniel Chanemougame, Steven Bentley +2 more | 2021-08-24 |
| 11024536 | Contact interlayer dielectric replacement with improved SAC cap retention | Adra Carr, Vimal Kamineni, Ruilong Xie, Andrew M. Greene, Veeraraghavan S. Basker | 2021-06-01 |
| 10734525 | Gate-all-around transistor with spacer support and methods of forming same | Ruilong Xie, Julien Frougier, Christopher M. Prindle | 2020-08-04 |
| 10504790 | Methods of forming conductive spacers for gate contacts and the resulting device | Ruilong Xie, Lars Liebmann, Bipul C. Paul, Daniel Chanemougame | 2019-12-10 |
| 10468300 | Contacting source and drain of a transistor device | Ruilong Xie, Andre P. Labonte, Lars Liebmann, Daniel Chanemougame, Chanro Park +1 more | 2019-11-05 |
| 10411010 | Tall single-fin FIN-type field effect transistor structures and methods | Ruilong Xie, Andreas Knorr, Murat Kerem Akarvardar, Lars Liebmann | 2019-09-10 |
| 10381459 | Transistors with H-shaped or U-shaped channels and method for forming the same | Ruilong Xie, Julien Frougier, Yi Qi, Edward J. Nowak, Andreas Knorr | 2019-08-13 |
| 10290549 | Integrated circuit structure, gate all-around integrated circuit structure and methods of forming same | Ruilong Xie, Julien Frougier, Min Gyu Sung, Edward J. Nowak, Lars Liebmann +2 more | 2019-05-14 |
| 10249728 | Air-gap gate sidewall spacer and method | Daniel Chanemougame, Andre P. Labonte, Ruilong Xie, Lars Liebmann, Guillaume Bouche | 2019-04-02 |
| 10249535 | Forming TS cut for zero or negative TS extension and resulting device | Ruilong Xie, Daniel Chanemougame, Lars Liebmann | 2019-04-02 |
| 10236218 | Methods, apparatus and system for forming wrap-around contact with dual silicide | Ruilong Xie, Julien Frougier, Hiroaki Niimi, Xusheng Wu | 2019-03-19 |
| 10211100 | Methods of forming an air gap adjacent a gate of a transistor and a gate contact above the active region of the transistor | Ruilong Xie, Lars Liebmann, Andre P. Labonte, Nicholas V. LiCausi, Guillaume Bouche +1 more | 2019-02-19 |
| 10204994 | Methods of forming a semiconductor device with a gate contact positioned above the active region | Ruilong Xie, Chanro Park, Andre P. Labonte, Lars Liebmann, Mark V. Raymond +2 more | 2019-02-12 |
| 10026824 | Air-gap gate sidewall spacer and method | Daniel Chanemougame, Andre P. Labonte, Ruilong Xie, Lars Liebmann, Guillaume Bouche | 2018-07-17 |
| 9978608 | Fin patterning for a fin-type field-effect transistor | Ruilong Xie, Min Gyu Sung, Lars Liebmann | 2018-05-22 |
| 9947589 | Methods of forming a gate contact for a transistor above an active region and the resulting device | Chanro Park, Ruilong Xie, Lars Liebmann, Andre P. Labonte, Mark V. Raymond | 2018-04-17 |
| 9929157 | Tall single-fin fin-type field effect transistor structures and methods | Ruilong Xie, Andreas Knorr, Murat Kerem Akarvardar, Lars Liebmann | 2018-03-27 |
| 8741743 | Integrated assist features for epitaxial growth | Omar Zia, Venkat R. Kolagunta, Ruiqi Tian, Edward O. Travis | 2014-06-03 |
| 7565639 | Integrated assist features for epitaxial growth bulk tiles with compensation | Omar Zia, Venkat R. Kolagunta, Ruiqi Tian, Edward O. Travis | 2009-07-21 |
| 7470624 | Integrated assist features for epitaxial growth bulk/SOI hybrid tiles with compensation | Omar Zia, Venkat R. Kolagunta, Ruiqi Tian, Edward O. Travis | 2008-12-30 |
| 7262105 | Semiconductor device with silicided source/drains | Dharmesh Jawarani, Michael Rendon | 2007-08-28 |
| 7144784 | Method of forming a semiconductor device and structure thereof | Byoung W. Min, Venkat R. Kolagunta, Omar Zia, Sinan Goktepeli | 2006-12-05 |
| 7109051 | Method of integrating optical devices and electronic devices on an integrated circuit | Omar Zia | 2006-09-19 |
| 7067342 | Method of integrating optical devices and electronic devices on an integrated circuit | Omar Zia, Lawrence C. Gunn, III | 2006-06-27 |
| 6924184 | Semiconductor device and method for forming a semiconductor device using post gate stack planarization | Anna Phillips, Terry G. Sparks | 2005-08-02 |