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Venkat R. Kolagunta

FS Freeescale Semiconductor: 22 patents #88 of 3,767Top 3%
Motorola: 3 patents #3,303 of 12,470Top 30%
🗺 Texas: #5,105 of 125,132 inventorsTop 5%
Overall (All Time): #164,838 of 4,157,543Top 4%
25
Patents All Time

Issued Patents All Time

Showing 1–25 of 25 patents

Patent #TitleCo-InventorsDate
8741743 Integrated assist features for epitaxial growth Omar Zia, Nigel G. Cave, Ruiqi Tian, Edward O. Travis 2014-06-03
8021957 Process of forming an electronic device including insulating layers having different strains Paul A. Grudowski, Mehul D. Shroff 2011-09-20
7843011 Electronic device including insulating layers having different strains Paul A. Grudowski, Mehul D. Shroff 2010-11-30
7799650 Method for making a transistor with a stressor Xiangzheng Bo, Konstantin V. Loiko 2010-09-21
7727870 Method of making a semiconductor device using a stressor Da Zhang, Xiangzheng Bo 2010-06-01
7714318 Electronic device including a transistor structure having an active region adjacent to a stressor layer Vance H. Adams, Paul A. Grudowski, Brian A. Winstead 2010-05-11
7678698 Method of forming a semiconductor device with multiple tensile stressor layers Xiangzheng Bo, Tien Ying Luo, Kurt H. Junker, Paul A. Grudowski 2010-03-16
7565639 Integrated assist features for epitaxial growth bulk tiles with compensation Omar Zia, Nigel G. Cave, Ruiqi Tian, Edward O. Travis 2009-07-21
7560318 Process for forming an electronic device including semiconductor layers having different stresses Mariam Sadaka, William J. Taylor, Jr., Victor H. Vartanian 2009-07-14
7534674 Method of making a semiconductor device with a stressor Sinan Goktepeli 2009-05-19
7514313 Process of forming an electronic device including a seed layer and a semiconductor layer selectively formed over the seed layer Omar Zia, Da Zhang, Narayanan C. Ramani, Bich-Yen Nguyen 2009-04-07
7504289 Process for forming an electronic device including transistor structures with sidewall spacers Sangwoo Lim, Stanley L. Filipiak, Paul A. Grudowski 2009-03-17
7479465 Transfer of stress to a layer Gregory S. Spencer, Narayanan C. Ramani, Vishal P. Trivedi 2009-01-20
7470624 Integrated assist features for epitaxial growth bulk/SOI hybrid tiles with compensation Omar Zia, Nigel G. Cave, Ruiqi Tian, Edward O. Travis 2008-12-30
7420202 Electronic device including a transistor structure having an active region adjacent to a stressor layer and a process for forming the electronic device Vance H. Adams, Paul A. Grudowski, Brian A. Winstead 2008-09-02
7410876 Methodology to reduce SOI floating-body effect Byoung W. Min, Jon D. Cheek 2008-08-12
7323373 Method of forming a semiconductor device with decreased undercutting of semiconductor material Leo Mathew, David C. Sing 2008-01-29
7282426 Method of forming a semiconductor device having asymmetric dielectric regions and structure thereof Leo Mathew, David C. Sing 2007-10-16
7161199 Transistor structure with stress modification and capacitive reduction feature in a width direction and method thereof Jian Chen, Michael A. Mendicino, Vance H. Adams, Choh Fei Yeap 2007-01-09
7144784 Method of forming a semiconductor device and structure thereof Byoung W. Min, Nigel G. Cave, Omar Zia, Sinan Goktepeli 2006-12-05
7067868 Double gate device having a heterojunction source/drain and strained channel Voon-Yew Thean, Mariam Sadaka, Ted R. White, Alexander L. Barr, Bich-Yen Nguyen +2 more 2006-06-27
7018901 Method for forming a semiconductor device having a strained channel and a heterojunction source/drain Voon-Yew Thean, Mariam Sadaka, Ted R. White, Alexander L. Barr, Bich-Yen Nguyen +2 more 2006-03-28
6573173 Method for forming a copper interconnect using a multi-platen chemical mechanical polishing (CMP) process János Farkas, Brian G. Anthony, Abbas Guvenilir, Mohammed Rabiul Islam, John Mendonca +2 more 2003-06-03
6444569 Method for forming a copper interconnect using a multi-platen chemical mechanical polishing (CMP) process János Farkas, Brian G. Anthony, Abbas Guvenilir, Mohammed Rabiul Islam, John Mendonca +2 more 2002-09-03
6274478 Method for forming a copper interconnect using a multi-platen chemical mechanical polishing (CMP) process János Farkas, Brian G. Anthony, Abbas Guvenilir, Mohammed Rabiul Islam, John Mendonca +2 more 2001-08-14