SL

Sangwoo Lim

FS Freeescale Semiconductor: 7 patents #456 of 3,767Top 15%
Samsung: 2 patents #37,631 of 75,807Top 50%
Globalfoundries: 1 patents #2,221 of 4,424Top 55%
RU Research & Business Foundation Sungkyunkwan University: 1 patents #708 of 1,975Top 40%
Overall (All Time): #447,219 of 4,157,543Top 15%
11
Patents All Time

Issued Patents All Time

Showing 1–11 of 11 patents

Patent #TitleCo-InventorsDate
11620057 Storage device and operating method thereof Seongnam Kwon, Haeri Lee, Donghwan JEONG, Unseon Cho, Moonsung Choi 2023-04-04
11521859 Non-phosphoric acid-based silicon nitride film etching composition and etching method using the same Changjin SON 2022-12-06
11106576 Data storage device for managing memory resources by using flash translation layer with condensed mapping information Dongkun Shin 2021-08-31
10056458 Siloxane and organic-based MOL contact patterning Chang Ho Maeng, Andy Wei, Anthony Ozzello, Bharat Krishnan, Guillaume Bouche +9 more 2018-08-21
7781831 Semiconductor device having nitridated oxide layer and method therefor Robert F. Steimle 2010-08-24
7504289 Process for forming an electronic device including transistor structures with sidewall spacers Stanley L. Filipiak, Paul A. Grudowski, Venkat R. Kolagunta 2009-03-17
7402472 Method of making a nitrided gate dielectric Paul A. Grudowski, Tien Ying Luo, Olubunmi O. Adetutu, Hsing-Huang Tseng 2008-07-22
7338894 Semiconductor device having nitridated oxide layer and method therefor Robert F. Steimle 2008-03-04
7214590 Method of forming an electronic device Paul A. Grudowski, Mohamad Jahanbani, Hsing-Huang Tseng, Choh Fei Yeap 2007-05-08
7126172 Integration of multiple gate dielectrics by surface protection Laegu Kang, Geoffrey Yeap 2006-10-24
7041562 Method for forming multiple gate oxide thickness utilizing ashing and cleaning Yongjoo Jeon, Choh Fei Yeap 2006-05-09