| 11264382 |
Fin-type field effect transistor with reduced fin bulge and method |
Jiehui Shu |
2022-03-01 |
| 11094598 |
Multiple threshold voltage devices |
Rinus Tek Po Lee, Jiehui Shu, Hyung-yoon Choi |
2021-08-17 |
| 10886178 |
Device with highly active acceptor doping and method of production thereof |
Tek Po Rinus Lee, Annie Levesque, Qun Gao, Hui Zang, Rishikesh Krishnan +1 more |
2021-01-05 |
| 10811411 |
Fin-type field effect transistor with reduced fin bulge and method |
Jiehui Shu |
2020-10-20 |
| 10312150 |
Protected trench isolation for fin-type field-effect transistors |
Fuad H. Al-Amoody, Jinping Liu, Joseph K. Kassim |
2019-06-04 |
| 10211045 |
Microwave annealing of flowable oxides with trap layers |
Rishikesh Krishnan, Joseph K. Kassim, Joseph F. Shepard, Jr., Rinus Tek Po Lee, Yiheng Xu |
2019-02-19 |
| 10134876 |
FinFETs with strained channels and reduced on state resistance |
Timothy J. McArdle, Rinus Tek Po Lee, Shishir Ray, Akshey Sehgal |
2018-11-20 |
| 10121706 |
Semiconductor structure including two-dimensional and three-dimensional bonding materials |
Rinus Tek Po Lee, Hui Zang, Matthew W. Stoker |
2018-11-06 |
| 10062692 |
Field effect transistors with reduced parasitic resistances and method |
Shishir Ray, Jinping Liu, Meera S. Mohan, Joseph K. Kassim |
2018-08-28 |
| 10056458 |
Siloxane and organic-based MOL contact patterning |
Chang Ho Maeng, Andy Wei, Anthony Ozzello, Guillaume Bouche, Haifeng Sheng +9 more |
2018-08-21 |
| 9882052 |
Forming defect-free relaxed SiGe fins |
Robert Judson Holt, Jinping Liu, Jody A. Fronheiser, Churamani Gaire, Timothy J. McArdle +1 more |
2018-01-30 |
| 9640423 |
Integrated circuits and methods for their fabrication |
Shishir Ray, Jinping Liu |
2017-05-02 |
| 9559166 |
Fabricating transistors having resurfaced source/drain regions with stressed portions |
Shishir Ray, Min-hwa Chi |
2017-01-31 |
| 9472465 |
Methods of fabricating integrated circuits |
Bongki Lee, Jin Ping Liu |
2016-10-18 |
| 9287180 |
Integrated circuits having finFETs with improved doped channel regions and methods for fabricating same |
Jinping Liu, Bongki Lee, Vidmantas Sargunas, Weihua Tong, Seung Kim |
2016-03-15 |
| 9165767 |
Semiconductor structure with increased space and volume between shaped epitaxial structures |
Jody A. Fronheiser, Jinping Liu, Bongki Lee |
2015-10-20 |
| 9093476 |
Integrated circuits having FinFETs with improved doped channel regions and methods for fabricating same |
Jinping Liu, Bongki Lee, Vidmantas Sargunas, Weihua Tong, Seung Kim |
2015-07-28 |
| 9059218 |
Reducing gate expansion after source and drain implant in gate last process |
Jinping Liu, Zhao Lun, Hui Zhan, Bongki Lee |
2015-06-16 |
| 8912085 |
Method and apparatus for adjusting threshold voltage in a replacement metal gate integration |
Bongki Lee, Jinping Liu |
2014-12-16 |
