Issued Patents All Time
Showing 25 most recent of 46 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12278237 | Stacked FETS with non-shared work function metals | Ruilong Xie, Julien Frougier, Junli Wang, Dechao Guo, Ruqiang Bao +1 more | 2025-04-15 |
| 12068415 | Precise bottom junction formation for vertical transport field effect transistor with highly doped epitaxial source/drain, sharp junction gradient, and/or reduced parasitic capacitance | Kai Zhao, Shahab Siddiqui, Daniel James Dechene, Charlotte DeWan Adams | 2024-08-20 |
| 11990412 | Buried power rails located in a base layer including first, second, and third etch stop layers | Ruilong Xie, Stuart A. Sieg, Somnath Ghosh, Kisik Choi, Alexander Reznicek | 2024-05-21 |
| 11888048 | Gate oxide for nanosheet transistor devices | Shahab Siddiqui, Koji Watanabe, Charlotte DeWan Adams, Kai Zhao, Daniel James Dechene | 2024-01-30 |
| 11515427 | Precise bottom junction formation for vertical transport field effect transistor with highly doped epitaxial source/drain, sharp junction gradient, and/or reduced parasitic capacitance | Kai Zhao, Shahab Siddiqui, Daniel James Dechene, Charlotte DeWan Adams | 2022-11-29 |
| 11211474 | Gate oxide for nanosheet transistor devices | Shahab Siddiqui, Koji Watanabe, Charlotte DeWan Adams, Kai Zhao, Daniel James Dechene | 2021-12-28 |
| 11081583 | FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth | Eric C. Harley, Judson R. Holt, Yue Ke, Keith H. Tabakman, Henry K. Utomo | 2021-08-03 |
| 10886178 | Device with highly active acceptor doping and method of production thereof | Tek Po Rinus Lee, Annie Levesque, Qun Gao, Hui Zang, Bharat Krishnan +1 more | 2021-01-05 |
| 10790198 | Fin structures | Fuad H. Al-Amoody, Yiheng Xu | 2020-09-29 |
| 10615279 | FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth | Eric C. Harley, Judson R. Holt, Yue Ke, Keith H. Tabakman, Henry K. Utomo | 2020-04-07 |
| 10243077 | FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth | Eric C. Harley, Judson R. Holt, Yue Ke, Keith H. Tabakman, Henry K. Utomo | 2019-03-26 |
| 10211045 | Microwave annealing of flowable oxides with trap layers | Joseph K. Kassim, Bharat Krishnan, Joseph F. Shepard, Jr., Rinus Tek Po Lee, Yiheng Xu | 2019-02-19 |
| 9917190 | FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth | Eric C. Harley, Judson R. Holt, Yue Ke, Keith H. Tabakman, Henry K. Utomo | 2018-03-13 |
| 9911597 | Trench metal insulator metal capacitor with oxygen gettering layer | Takashi Ando, Eduard A. Cartier, Michael P. Chudzik, Aritra Dasgupta, Herbert L. Ho +3 more | 2018-03-06 |
| 9831084 | Hydroxyl group termination for nucleation of a dielectric metallic oxide | Takashi Ando, Michael P. Chudzik, Min Dai, Martin M. Frank, David F. Hilscher +3 more | 2017-11-28 |
| 9653534 | Trench metal-insulator-metal capacitor with oxygen gettering layer | Takashi Ando, Eduard A. Cartier, Michael P. Chudzik, Aritra Dasgupta, Herbert L. Ho +3 more | 2017-05-16 |
| 9653535 | DT capacitor with silicide outer electrode and/or compressive stress layer, and related methods | Nicolas L. Breil, Ricardo A. Donaton, Dong-Hun Kang, Herbert L. Ho | 2017-05-16 |
| 9577100 | FinFET and nanowire semiconductor devices with suspended channel regions and gate structures surrounding the suspended channel regions | Kangguo Cheng, Michael P. Chudzik, Eric C. Harley, Judson R. Holt, Yue Ke +2 more | 2017-02-21 |
| 9536985 | Epitaxial growth of material on source/drain regions of FinFET structure | Michael P. Chudzik, Brian J. Greene, Eric C. Harley, Judson R. Holt, Yue Ke +2 more | 2017-01-03 |
| 9496329 | DT capacitor with silicide outer electrode and/or compressive stress layer, and related methods | Nicolas L. Breil, Ricardo A. Donaton, Dong-Hun Kang, Herbert L. Ho | 2016-11-15 |
| 9373501 | Hydroxyl group termination for nucleation of a dielectric metallic oxide | Takashi Ando, Michael P. Chudzik, Min Dai, Martin M. Frank, David F. Hilscher +3 more | 2016-06-21 |
| 9373524 | Die level chemical mechanical polishing | Rajasekhar Venigalla | 2016-06-21 |
| 9318336 | Non-volatile memory structure employing high-k gate dielectric and metal gate | Nicolas L. Breil, Michael P. Chudzik, Siddarth A. Krishnan, Unoh Kwon | 2016-04-19 |
| 9312364 | finFET with dielectric isolation after gate module for improved source and drain region epitaxial growth | Eric C. Harley, Judson R. Holt, Yue Ke, Keith H. Tabakman, Henry K. Utomo | 2016-04-12 |
| 9299766 | DT capacitor with silicide outer electrode and/or compressive stress layer, and related methods | Nicolas L. Breil, Ricardo A. Donaton, Dong-Hun Kang, Herbert L. Ho | 2016-03-29 |