| 12278237 |
Stacked FETS with non-shared work function metals |
Ruilong Xie, Julien Frougier, Junli Wang, Dechao Guo, Ruqiang Bao +1 more |
2025-04-15 |
|
| 12068415 |
Precise bottom junction formation for vertical transport field effect transistor with highly doped epitaxial source/drain, sharp junction gradient, and/or reduced parasitic capacitance |
Kai Zhao, Shahab Siddiqui, Daniel James Dechene, Charlotte DeWan Adams |
2024-08-20 |
$51,741,000 |
| 11990412 |
Buried power rails located in a base layer including first, second, and third etch stop layers |
Ruilong Xie, Stuart A. Sieg, Somnath Ghosh, Kisik Choi, Alexander Reznicek |
2024-05-21 |
$15,464,000 |
| 11888048 |
Gate oxide for nanosheet transistor devices |
Shahab Siddiqui, Koji Watanabe, Charlotte DeWan Adams, Kai Zhao, Daniel James Dechene |
2024-01-30 |
$13,656,000 |
| 11515427 |
Precise bottom junction formation for vertical transport field effect transistor with highly doped epitaxial source/drain, sharp junction gradient, and/or reduced parasitic capacitance |
Kai Zhao, Shahab Siddiqui, Daniel James Dechene, Charlotte DeWan Adams |
2022-11-29 |
$7,547,000 |
| 11211474 |
Gate oxide for nanosheet transistor devices |
Shahab Siddiqui, Koji Watanabe, Charlotte DeWan Adams, Kai Zhao, Daniel James Dechene |
2021-12-28 |
$7,175,000 |
| 11081583 |
FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth |
Eric C. Harley, Judson R. Holt, Yue Ke, Keith H. Tabakman, Henry K. Utomo |
2021-08-03 |
$4,187,000 |
| 10886178 |
Device with highly active acceptor doping and method of production thereof |
Tek Po Rinus Lee, Annie Levesque, Qun Gao, Hui Zang, Bharat Krishnan +1 more |
2021-01-05 |
$138,450,000 |
| 10790198 |
Fin structures |
Fuad H. Al-Amoody, Yiheng Xu |
2020-09-29 |
$112,411,000 |
| 10615279 |
FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth |
Eric C. Harley, Judson R. Holt, Yue Ke, Keith H. Tabakman, Henry K. Utomo |
2020-04-07 |
$1,846,000 |
| 10243077 |
FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth |
Eric C. Harley, Judson R. Holt, Yue Ke, Keith H. Tabakman, Henry K. Utomo |
2019-03-26 |
$2,148,000 |
| 10211045 |
Microwave annealing of flowable oxides with trap layers |
Joseph K. Kassim, Bharat Krishnan, Joseph F. Shepard, Jr., Rinus Tek Po Lee, Yiheng Xu |
2019-02-19 |
$21,958,000 |
| 9917190 |
FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth |
Eric C. Harley, Judson R. Holt, Yue Ke, Keith H. Tabakman, Henry K. Utomo |
2018-03-13 |
$2,527,000 |
| 9911597 |
Trench metal insulator metal capacitor with oxygen gettering layer |
Takashi Ando, Eduard A. Cartier, Michael P. Chudzik, Aritra Dasgupta, Herbert L. Ho +3 more |
2018-03-06 |
$2,330,000 |
| 9831084 |
Hydroxyl group termination for nucleation of a dielectric metallic oxide |
Takashi Ando, Michael P. Chudzik, Min Dai, Martin M. Frank, David F. Hilscher +3 more |
2017-11-28 |
$4,993,000 |
| 9653534 |
Trench metal-insulator-metal capacitor with oxygen gettering layer |
Takashi Ando, Eduard A. Cartier, Michael P. Chudzik, Aritra Dasgupta, Herbert L. Ho +3 more |
2017-05-16 |
$2,370,000 |
| 9653535 |
DT capacitor with silicide outer electrode and/or compressive stress layer, and related methods |
Nicolas L. Breil, Ricardo A. Donaton, Dong-Hun Kang, Herbert L. Ho |
2017-05-16 |
$2,370,000 |
| 9577100 |
FinFET and nanowire semiconductor devices with suspended channel regions and gate structures surrounding the suspended channel regions |
Kangguo Cheng, Michael P. Chudzik, Eric C. Harley, Judson R. Holt, Yue Ke +2 more |
2017-02-21 |
$8,671,000 |
| 9536985 |
Epitaxial growth of material on source/drain regions of FinFET structure |
Michael P. Chudzik, Brian J. Greene, Eric C. Harley, Judson R. Holt, Yue Ke +2 more |
2017-01-03 |
$6,197,000 |
| 9496329 |
DT capacitor with silicide outer electrode and/or compressive stress layer, and related methods |
Nicolas L. Breil, Ricardo A. Donaton, Dong-Hun Kang, Herbert L. Ho |
2016-11-15 |
$2,170,000 |
| 9373501 |
Hydroxyl group termination for nucleation of a dielectric metallic oxide |
Takashi Ando, Michael P. Chudzik, Min Dai, Martin M. Frank, David F. Hilscher +3 more |
2016-06-21 |
$3,815,000 |
| 9373524 |
Die level chemical mechanical polishing |
Rajasekhar Venigalla |
2016-06-21 |
$3,815,000 |
| 9318336 |
Non-volatile memory structure employing high-k gate dielectric and metal gate |
Nicolas L. Breil, Michael P. Chudzik, Siddarth A. Krishnan, Unoh Kwon |
2016-04-19 |
|
| 9312364 |
finFET with dielectric isolation after gate module for improved source and drain region epitaxial growth |
Eric C. Harley, Judson R. Holt, Yue Ke, Keith H. Tabakman, Henry K. Utomo |
2016-04-12 |
$2,843,000 |
| 9299766 |
DT capacitor with silicide outer electrode and/or compressive stress layer, and related methods |
Nicolas L. Breil, Ricardo A. Donaton, Dong-Hun Kang, Herbert L. Ho |
2016-03-29 |
$2,226,000 |
