Issued Patents All Time
Showing 25 most recent of 68 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12406930 | Structure containing a via-to-buried power rail contact structure or a via-to-backside power rail contact structure | Ruilong Xie, Kevin S. Petrarca, Eric R. Miller | 2025-09-02 |
| 12322601 | Alternating hardmasks for tight-pitch line formation | Sean D. Burns, Nelson Felix, Chi-Chun Liu, Yann Mignot | 2025-06-03 |
| 12324236 | Bottom contact for stacked GAA FET | Indira Seshadri, Su Chen Fan | 2025-06-03 |
| 12268026 | High aspect ratio contact structure with multiple metal stacks | Junli Wang, Brent A. Anderson, Terence B. Hook, Indira Seshadri, Albert M. Young +2 more | 2025-04-01 |
| 12148617 | Structure and method to pattern pitch lines | Chanro Park, Chi-Chun Liu, Yann Mignot, Koichi Motoyama, Hsueh-Chung Chen | 2024-11-19 |
| RE50174 | Structure and process to tuck fin tips self-aligned to gates | Bruce B. Doris, Hong He, Sivananda K. Kanakasabapathy, Gauri Karve, Fee Li Lie +2 more | 2024-10-15 |
| 12080559 | Using a same mask for direct print and self-aligned double patterning of nanosheets | Daniel James Dechene, Eric R. Miller | 2024-09-03 |
| 11990412 | Buried power rails located in a base layer including first, second, and third etch stop layers | Ruilong Xie, Somnath Ghosh, Kisik Choi, Rishikesh Krishnan, Alexander Reznicek | 2024-05-21 |
| 11610780 | Alternating hardmasks for tight-pitch line formation | Sean D. Burns, Nelson Felix, Chi-Chun Liu, Yann Mignot | 2023-03-21 |
| 11257681 | Using a same mask for direct print and self-aligned double patterning of nanosheets | Daniel James Dechene, Eric R. Miller | 2022-02-22 |
| 11205723 | Selective source/drain recess for improved performance, isolation, and scaling | Ardasheir Rahman, Brent A. Anderson, Junli Wang, Christopher J. Waskiewicz | 2021-12-21 |
| 11183389 | Fin field effect transistor devices with self-aligned gates | Wenyu Xu, Ruilong Xie, John R. Sporre | 2021-11-23 |
| 11171002 | Alternating hardmasks for tight-pitch line formation | John C. Arnold, Anuja E. DeSilva, Nelson Felix, Chi-Chun Liu, Yann Mignot | 2021-11-09 |
| 11121024 | Tunable hardmask for overlayer metrology contrast | Ekmini Anuja De Silva, Nelson Felix, Indira Seshadri | 2021-09-14 |
| 11031248 | Alternating hardmasks for tight-pitch line formation | Sean D. Burns, Nelson Felix, Chi-Chun Liu, Yann Mignot | 2021-06-08 |
| 10985025 | Fin cut profile using fin base liner | Eric R. Miller, Yann Mignot, Indira Seshadri, Christopher J. Waskiewicz | 2021-04-20 |
| 10943911 | Vertical transport devices with greater density through modified well shapes | Brent A. Anderson, Junli Wang | 2021-03-09 |
| 10832919 | Measuring and modeling material planarization performance | Romain Lallement | 2020-11-10 |
| 10811507 | Vertical transistors having multiple gate thicknesses for optimizing performance and device density | Brent A. Anderson, Fee Li Lie, Junli Wang | 2020-10-20 |
| 10811508 | Vertical transistors having multiple gate thicknesses for optimizing performance and device density | Brent A. Anderson, Fee Li Lie, Junli Wang | 2020-10-20 |
| 10741452 | Controlling fin hardmask cut profile using a sacrificial epitaxial structure | Eric R. Miller, Yann Mignot, Indira Seshadri, Christopher J. Waskiewicz | 2020-08-11 |
| 10734372 | Vertical transport static random-access memory cells with transistors of active regions arranged in linear rows | Brent A. Anderson, Junli Wang | 2020-08-04 |
| 10665715 | Controlling gate length of vertical transistors | Praveen Joseph, Indira Seshadri, Ekmini Anuja De Silva | 2020-05-26 |
| 10642950 | Verifying planarization performance using electrical measures | Romain Lallement | 2020-05-05 |
| 10629489 | Approach to prevent collapse of high aspect ratio Fin structures for vertical transport Fin field effect transistor devices | Indira Seshadri, Praveen Joseph, Ekmini Anuja De Silva | 2020-04-21 |