| 12444653 |
Buried power rail at tight cell-to-cell space |
Ruinan Xie, Somit Ghosh, Ki-Hyouk Choi, Kevin S. Petrarca |
2025-10-14 |
|
| 12406930 |
Structure containing a via-to-buried power rail contact structure or a via-to-backside power rail contact structure |
Ruilong Xie, Kevin S. Petrarca, Eric R. Miller |
2025-09-02 |
|
| 12322601 |
Alternating hardmasks for tight-pitch line formation |
Sean D. Burns, Nelson Felix, Chi-Chun Liu, Yann Mignot |
2025-06-03 |
|
| 12324236 |
Bottom contact for stacked GAA FET |
Indira Seshadri, Su Chen Fan |
2025-06-03 |
|
| 12268026 |
High aspect ratio contact structure with multiple metal stacks |
Junli Wang, Brent A. Anderson, Terence B. Hook, Indira Seshadri, Albert M. Young +2 more |
2025-04-01 |
|
| 12148617 |
Structure and method to pattern pitch lines |
Chanro Park, Chi-Chun Liu, Yann Mignot, Koichi Motoyama, Hsueh-Chung Chen |
2024-11-19 |
$17,641,000 |
| RE50174 |
Structure and process to tuck fin tips self-aligned to gates |
Bruce B. Doris, Hong He, Sivananda K. Kanakasabapathy, Gauri Karve, Fee Li Lie +2 more |
2024-10-15 |
|
| 12080559 |
Using a same mask for direct print and self-aligned double patterning of nanosheets |
Daniel James Dechene, Eric R. Miller |
2024-09-03 |
$28,105,000 |
| 11990412 |
Buried power rails located in a base layer including first, second, and third etch stop layers |
Ruilong Xie, Somnath Ghosh, Kisik Choi, Rishikesh Krishnan, Alexander Reznicek |
2024-05-21 |
$15,464,000 |
| 11610780 |
Alternating hardmasks for tight-pitch line formation |
Sean D. Burns, Nelson Felix, Chi-Chun Liu, Yann Mignot |
2023-03-21 |
$8,142,000 |
| 11257681 |
Using a same mask for direct print and self-aligned double patterning of nanosheets |
Daniel James Dechene, Eric R. Miller |
2022-02-22 |
$13,349,000 |
| 11205723 |
Selective source/drain recess for improved performance, isolation, and scaling |
Ardasheir Rahman, Brent A. Anderson, Junli Wang, Christopher J. Waskiewicz |
2021-12-21 |
$5,237,000 |
| 11183389 |
Fin field effect transistor devices with self-aligned gates |
Wenyu Xu, Ruilong Xie, John R. Sporre |
2021-11-23 |
$2,653,000 |
| 11171002 |
Alternating hardmasks for tight-pitch line formation |
John C. Arnold, Anuja E. DeSilva, Nelson Felix, Chi-Chun Liu, Yann Mignot |
2021-11-09 |
$17,544,000 |
| 11121024 |
Tunable hardmask for overlayer metrology contrast |
Ekmini Anuja De Silva, Nelson Felix, Indira Seshadri |
2021-09-14 |
$2,674,000 |
| 11031248 |
Alternating hardmasks for tight-pitch line formation |
Sean D. Burns, Nelson Felix, Chi-Chun Liu, Yann Mignot |
2021-06-08 |
$25,375,000 |
| 10985025 |
Fin cut profile using fin base liner |
Eric R. Miller, Yann Mignot, Indira Seshadri, Christopher J. Waskiewicz |
2021-04-20 |
$5,008,000 |
| 10943911 |
Vertical transport devices with greater density through modified well shapes |
Brent A. Anderson, Junli Wang |
2021-03-09 |
$4,710,000 |
| 10832919 |
Measuring and modeling material planarization performance |
Romain Lallement |
2020-11-10 |
$848,000 |
| 10811508 |
Vertical transistors having multiple gate thicknesses for optimizing performance and device density |
Brent A. Anderson, Fee Li Lie, Junli Wang |
2020-10-20 |
$3,651,000 |
| 10811507 |
Vertical transistors having multiple gate thicknesses for optimizing performance and device density |
Brent A. Anderson, Fee Li Lie, Junli Wang |
2020-10-20 |
$3,651,000 |
| 10741452 |
Controlling fin hardmask cut profile using a sacrificial epitaxial structure |
Eric R. Miller, Yann Mignot, Indira Seshadri, Christopher J. Waskiewicz |
2020-08-11 |
$2,122,000 |
| 10734372 |
Vertical transport static random-access memory cells with transistors of active regions arranged in linear rows |
Brent A. Anderson, Junli Wang |
2020-08-04 |
$3,150,000 |
| 10665715 |
Controlling gate length of vertical transistors |
Praveen Joseph, Indira Seshadri, Ekmini Anuja De Silva |
2020-05-26 |
$2,933,000 |
| 10642950 |
Verifying planarization performance using electrical measures |
Romain Lallement |
2020-05-05 |
$3,712,000 |
