Issued Patents All Time
Showing 1–25 of 1,279 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12432968 | Nanowire source/drain formation for nanosheet device | Ruilong Xie, Julien Frougier, Kangguo Cheng | 2025-09-30 |
| 12408369 | Vertical transport field effect transistors having different threshold voltages along the channel | Choonghyun Lee, Takashi Ando, Jingyun Zhang | 2025-09-02 |
| 12402544 | Antenna assisted ReRAM formation | Youngseok Kim, Soon-Cheon Seo, Injo Ok | 2025-08-26 |
| 12402342 | Nanosheet device with T-shaped dual inner spacer | Pouya Hashemi, Takashi Ando, Ruilong Xie | 2025-08-26 |
| 12382682 | Gate-all-around nanosheet-FET with variable channel geometries for performance optimization | Julien Frougier, Ruilong Xie, Heng Wu, Chen Zhang | 2025-08-05 |
| 12364174 | Global heater for phase change memory | Nanbo Gong, Takashi Ando, Bahman Hekmatshoartabari | 2025-07-15 |
| 12364164 | Reactive serial resistance reduction for magnetoresistive random-access memory devices | Matthias Georg Gottwald, Guohan Hu, Stephen L. Brown | 2025-07-15 |
| 12329045 | Phase change memory programming current leakage reduction | Injo Ok, Soon-Cheon Seo, Youngseok Kim, Timothy Mathew Philip | 2025-06-10 |
| 12324237 | Diffusion-break region in stacked-FET integrated circuit device | Ruilong Xie, Daniel Schmidt, Tsung-Sheng Kang | 2025-06-03 |
| 12317764 | Uniform voltage drop in arrays of memory devices | Injo Ok, Soon-Cheon Seo, Youngseok Kim | 2025-05-27 |
| 12317537 | Reduced parasitic capacitance semiconductor device containing at least one local interconnect passthrough structure | Ruilong Xie, Dechao Guo, Junli Wang | 2025-05-27 |
| 12310263 | Phase change memory gaps | Injo Ok, Soon-Cheon Seo, Oleg Gluschenkov | 2025-05-20 |
| 12293469 | Virtual reality design navigation using a temporal collaboration dependency map | Jeremy R. Fox, Martin G. Keen, Bahman Hekmatshoartabari | 2025-05-06 |
| 12268016 | Buried power rail formation for vertical field effect transistors | Ruilong Xie, Junli Wang, Brent A. Anderson, Chen Zhang, Heng Wu | 2025-04-01 |
| 12262552 | Source/drain epitaxy process in stacked FET | Tsung-Sheng Kang, Daniel Schmidt, Ruilong Xie | 2025-03-25 |
| 12255106 | Multi-Vt nanosheet devices | Jingyun Zhang, Takashi Ando, Choonghyun Lee | 2025-03-18 |
| 12245530 | Phase change memory with concentric ring-shaped heater | Kangguo Cheng, Carl Radens, Juntao Li, Ruilong Xie, Praneet Adusumilli +1 more | 2025-03-04 |
| 12236539 | Contextual positioning in virtual space | Martin G. Keen, Jeremy R. Fox, Bahman Hekmatshoartabari | 2025-02-25 |
| 12237328 | Minimizing shorting between FinFET epitaxial regions | Kangguo Cheng, Balasubramanian Pranatharthiharan, Charan V. Surisetty | 2025-02-25 |
| 12230676 | Nanosheet device with tri-layer bottom dielectric isolation | Xin Miao, Jingyun Zhang, Choonghyun Lee | 2025-02-18 |
| 12225835 | Resistive switching device having a protective electrode ring | Takashi Ando, Ruilong Xie, Pouya Hashemi | 2025-02-11 |
| 12219884 | Phase change memory with conductive rings | Kangguo Cheng, Carl Radens, Juntao Li, Ruilong Xie, Praneet Adusumilli +3 more | 2025-02-04 |
| 12191352 | Using different work-functions to reduce gate-induced drain leakage current in stacked nanosheet transistors | Takashi Ando, Ruilong Xie, Pouya Hashemi | 2025-01-07 |
| 12183826 | Vertical field effect transistor with low-resistance bottom source-drain contact | Choonghyun Lee, Soon-Cheon Seo, Injo Ok | 2024-12-31 |
| 12176434 | Strained semiconductor FET devices with epitaxial quality improvement | Heng Wu, Ruilong Xie, Lan Yu | 2024-12-24 |