Issued Patents All Time
Showing 1–25 of 605 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12408564 | Process-induced forming of oxide RRAM | Soon-Cheon Seo, Youngseok Kim, Hiroyuki Miyazoe | 2025-09-02 |
| 12408431 | Gate stack quality for gate-all-around field-effect transistors | Jingyun Zhang, Choonghyun Lee | 2025-09-02 |
| 12408369 | Vertical transport field effect transistors having different threshold voltages along the channel | Choonghyun Lee, Alexander Reznicek, Jingyun Zhang | 2025-09-02 |
| 12402342 | Nanosheet device with T-shaped dual inner spacer | Pouya Hashemi, Alexander Reznicek, Ruilong Xie | 2025-08-26 |
| 12396376 | Piezoelectric memory | Guy M. Cohen, Nanbo Gong | 2025-08-19 |
| 12382621 | Decoupling capacitor inside gate cut trench | Reinaldo Vega, Praneet Adusumilli, David Wolpert, Cheng Chi | 2025-08-05 |
| 12364174 | Global heater for phase change memory | Nanbo Gong, Alexander Reznicek, Bahman Hekmatshoartabari | 2025-07-15 |
| 12310034 | Semiconductor device identification using preformed resistive memory | Jonas Doevenspeck, Youngseok Kim, Soon-Cheon Seo, Seyoung Kim | 2025-05-20 |
| 12284922 | Stacked access device and resistive memory | Hiroyuki Miyazoe, Gloria W. Fraczak, Kumar R. Virwani | 2025-04-22 |
| 12272657 | RRAM filament location for physically unclonable function | Nanbo Gong, Guy M. Cohen | 2025-04-08 |
| 12266393 | Negative capacitance for ferroelectric capacitive memory cell | Reinaldo Vega, David Wolpert, Nicholas Anthony Lanzillo | 2025-04-01 |
| 12255106 | Multi-Vt nanosheet devices | Jingyun Zhang, Choonghyun Lee, Alexander Reznicek | 2025-03-18 |
| 12234323 | Transparent polyimide film and production method therefor | Kohei Ogawa, Masahiro Miyamoto | 2025-02-25 |
| 12225833 | Oxide-based resistive memory having a plasma-exposed bottom electrode | Hiroyuki Miyazoe, Eduard A. Cartier, Babar A. Khan, Youngseok Kim, Dexin Kong +2 more | 2025-02-11 |
| 12225835 | Resistive switching device having a protective electrode ring | Ruilong Xie, Alexander Reznicek, Pouya Hashemi | 2025-02-11 |
| 12207573 | Phase change memory cell with superlattice based thermal barrier | Praneet Adusumilli, Kevin W. Brew, Reinaldo Vega | 2025-01-21 |
| 12191352 | Using different work-functions to reduce gate-induced drain leakage current in stacked nanosheet transistors | Ruilong Xie, Pouya Hashemi, Alexander Reznicek | 2025-01-07 |
| 12156395 | Metal gate patterning for logic and SRAM in nanosheet devices | Choonghyun Lee, Jingyun Zhang, Alexander Reznicek | 2024-11-26 |
| 12150392 | Transfer length phase change material (PCM) based bridge cell | Guy M. Cohen, Nanbo Gong | 2024-11-19 |
| 12135497 | Random weight initialization of non-volatile memory array | Cheng Chi, Reinaldo Vega, Praneet Adusumilli | 2024-11-05 |
| 12136671 | Gate-all-around field-effect transistor having source side lateral end portion smaller than a thickness of channel portion and drain side lateral end portion | Jingyun Zhang, Choonghyun Lee, Pouya Hashemi, Alexander Reznicek | 2024-11-05 |
| 12099616 | Physically unclonable function based on a phase change material array | Guy M. Cohen, Nanbo Gong | 2024-09-24 |
| 12058943 | Phase-change material-based XOR logic gates | Nanbo Gong, Guy M. Cohen | 2024-08-06 |
| 12057387 | Decoupling capacitor inside gate cut trench | Reinaldo Vega, David Wolpert, Praneet Adusumilli, Cheng Chi | 2024-08-06 |
| 12026605 | FeFET unit cells for neuromorphic computing | Nanbo Gong, Bahman Hekmatshoartabari, Alexander Reznicek | 2024-07-02 |