| 12382621 |
Decoupling capacitor inside gate cut trench |
Reinaldo Vega, Takashi Ando, Praneet Adusumilli, David Wolpert |
2025-08-05 |
|
| 12310061 |
Nanosheet transistor devices with different active channel widths |
Ruilong Xie, Julien Frougier, Kangguo Cheng, Chanro Park, Jinning Liu |
2025-05-20 |
|
| 12057387 |
Decoupling capacitor inside gate cut trench |
Reinaldo Vega, David Wolpert, Takashi Ando, Praneet Adusumilli |
2024-08-06 |
$17,119,000 |
| 11990470 |
Ferroelectric and paraelectric stack capacitors |
Takashi Ando, Reinaldo Vega, Praneet Adusumilli |
2024-05-21 |
$15,464,000 |
| 11916099 |
Multilayer dielectric for metal-insulator-metal capacitor |
Takashi Ando, Reinaldo Vega, David Wolpert, Praneet Adusumilli |
2024-02-27 |
$9,833,000 |
| 11588105 |
Phase-change memory device with reduced programming voltage |
Praneet Adusumilli, Takashi Ando, Reinaldo Vega |
2023-02-21 |
$5,683,000 |
| 11502252 |
Resistive switching memory cell |
Takashi Ando, Praneet Adusumilli, Reinaldo Vega |
2022-11-15 |
$5,426,000 |
| 11456416 |
Resistive switching memory cell |
Praneet Adusumilli, Takashi Ando, Reinaldo Vega |
2022-09-27 |
$6,862,000 |
| 11430954 |
Resistance drift mitigation in non-volatile memory cell |
Praneet Adusumilli, Anirban Chandra, Takashi Ando, Reinaldo Vega |
2022-08-30 |
$8,668,000 |
| 11424362 |
NCFETS with complimentary capacitance matching using stacked n-type and p-type nanosheets |
Takashi Ando, Reinaldo Vega, Praneet Adusumilli |
2022-08-23 |
$8,523,000 |
| 11335730 |
Vertical resistive memory device with embedded selectors |
Takashi Ando, Praneet Adusumilli, Reinaldo Vega |
2022-05-17 |
$6,899,000 |
| 10916630 |
Nanosheet devices with improved electrostatic integrity |
Ruilong Xie, Chi-Chun Liu, Kangguo Cheng |
2021-02-09 |
$3,536,000 |
| 10680064 |
Techniques for VFET top source/drain epitaxy |
Kangguo Cheng, Chi-Chun Liu, Ruilong Xie, Tenko Yamashita, Chun-Chen Yeh |
2020-06-09 |
$2,264,000 |
| 10361116 |
Design-aware pattern density control in directed self-assembly graphoepitaxy process |
Hsueh-Chung Chen, Lin Hu, Kafai Lai, Chi-Chun Liu, Jed W. Pitera |
2019-07-23 |
$2,519,000 |
| 10340179 |
Via formation using directed self-assembly of a block copolymer |
Kafai Lai, Chi-Chun Liu, Yongan Xu |
2019-07-02 |
$3,331,000 |
| 10199464 |
Techniques for VFET top source/drain epitaxy |
Kangguo Cheng, Chi-Chun Liu, Ruilong Xie, Tenko Yamashita, Chun-Chen Yeh |
2019-02-05 |
$9,200,000 |
| 10170585 |
Semiconductor devices having equal thickness gate spacers |
Ruilong Xie |
2019-01-01 |
|
| 10170582 |
Uniform bottom spacer for vertical field effect transistor |
Michael P. Belyansky, Ekmini Anuja De Silva, Tenko Yamashita |
2019-01-01 |
|
| 10157789 |
Via formation using sidewall image transfer process to define lateral dimension |
Shyng-Tsong Chen, Chi-Chun Liu, Sylvie Mignot, Yann Mignot, Hosadurga Shobha +3 more |
2018-12-18 |
$3,830,000 |
| 10090410 |
Forming a combination of long channel devices and vertical transport fin field effect transistors on the same substrate |
Tenko Yamashita, Chen Zhang |
2018-10-02 |
$3,730,000 |
| 9984920 |
Design-aware pattern density control in directed self-assembly graphoepitaxy process |
Hsueh-Chung Chen, Lin Hu, Kafai Lai, Chi-Chun Liu, Jed W. Pitera |
2018-05-29 |
$2,015,000 |
| 9810980 |
Graphoepitaxy directed self assembly |
Hongyun Cottle, Chi-Chun Liu, Kristin Schmidt |
2017-11-07 |
$4,555,000 |
| 9632408 |
Graphoepitaxy directed self assembly |
Hongyun Cottle, Chi-Chun Liu, Kristin Schmidt |
2017-04-25 |
$1,937,000 |
| 9490168 |
Via formation using sidewall image transfer process to define lateral dimension |
Shyng-Tsong Chen, Chi-Chun Liu, Sylvie Mignot, Yann Mignot, Hosadurga Shobha +3 more |
2016-11-08 |
$9,888,000 |
| 9409857 |
Agomelatine sulfuric acid complex, and preparation method and application thereof |
Haiping Wang, Zhengming Chi, Jin Wang, Guanyu Xu |
2016-08-09 |
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