Issued Patents All Time
Showing 1–25 of 42 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12396376 | Piezoelectric memory | Guy M. Cohen, Takashi Ando | 2025-08-19 |
| 12364174 | Global heater for phase change memory | Takashi Ando, Alexander Reznicek, Bahman Hekmatshoartabari | 2025-07-15 |
| 12272657 | RRAM filament location for physically unclonable function | Takashi Ando, Guy M. Cohen | 2025-04-08 |
| 12150392 | Transfer length phase change material (PCM) based bridge cell | Guy M. Cohen, Takashi Ando | 2024-11-19 |
| 12099616 | Physically unclonable function based on a phase change material array | Guy M. Cohen, Takashi Ando | 2024-09-24 |
| 12058943 | Phase-change material-based XOR logic gates | Guy M. Cohen, Takashi Ando | 2024-08-06 |
| 12026605 | FeFET unit cells for neuromorphic computing | Takashi Ando, Bahman Hekmatshoartabari, Alexander Reznicek | 2024-07-02 |
| 11948618 | Non-volatile analog resistive memory cells implementing ferroelectric select transistors | Takashi Ando | 2024-04-02 |
| 11942388 | Temperature-assisted device with integrated thin-film heater | Bahman Hekmatshoartabari, Takashi Ando, Alexander Reznicek | 2024-03-26 |
| 11929404 | Transistor gates having embedded metal-insulator-metal capacitors | Alexander Reznicek, Takashi Ando, Bahman Hekmatshoartabari | 2024-03-12 |
| 11923458 | FeFET with double gate structure | Takashi Ando, Guy M. Cohen | 2024-03-05 |
| 11915751 | Nonvolatile phase change material logic device | Guy M. Cohen, Takashi Ando | 2024-02-27 |
| 11910734 | Phase change memory cell with ovonic threshold switch | Takashi Ando, Robert L. Bruce, Alexander Reznicek, Bahman Hekmatshoartabari | 2024-02-20 |
| 11864474 | ReRAM analog PUF using filament location | Takashi Ando, Franco Stellari, Guy M. Cohen | 2024-01-02 |
| 11856798 | Resistive random-access memory random number generator | Guy M. Cohen, Takashi Ando | 2023-12-26 |
| 11844293 | Physical unclonable function device with phase change | Guy M. Cohen, Takashi Ando, Franco Stellari | 2023-12-12 |
| 11818971 | PCM cell with resistance drift correction | Heng Wu, Ruilong Xie, Cheng-Wei Cheng | 2023-11-14 |
| 11818886 | Low program voltage flash memory cells with embedded heater in the control gate | Takashi Ando, Bahman Hekmatshoartabari, Alexander Reznicek | 2023-11-14 |
| 11805714 | Phase change memory with conductive bridge filament | Takashi Ando, Guy M. Cohen | 2023-10-31 |
| 11805713 | Drift mitigation for resistive memory devices | Guy M. Cohen, Takashi Ando, Kevin W. Brew | 2023-10-31 |
| 11790243 | Ferroelectric field effect transistor for implementation of decision tree | Takashi Ando, Guy M. Cohen | 2023-10-17 |
| 11727977 | Non-volatile analog resistive memory cells implementing ferroelectric select transistors | Takashi Ando | 2023-08-15 |
| 11688457 | Using ferroelectric field-effect transistors (FeFETs) as capacitive processing units for in-memory computing | Guy M. Cohen, Takashi Ando, Yulong Li | 2023-06-27 |
| 11665983 | Phase change memory cell with ovonic threshold switch | Takashi Ando, Robert L. Bruce, Alexander Reznicek, Bahman Hekmatshoartabari | 2023-05-30 |
| 11653578 | Phase-change material-based XOR logic gates | Guy M. Cohen, Takashi Ando | 2023-05-16 |