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Nanbo Gong

IBM: 42 patents #2,200 of 70,183Top 4%
MC Macronix International Co.: 1 patents #718 of 1,241Top 60%
📍 White Plains, NY: #42 of 917 inventorsTop 5%
🗺 New York: #2,449 of 115,490 inventorsTop 3%
Overall (All Time): #71,989 of 4,157,543Top 2%
42
Patents All Time

Issued Patents All Time

Showing 26–42 of 42 patents

Patent #TitleCo-InventorsDate
11647684 Nonvolatile tunable capacitive processing unit Guy M. Cohen, Takashi Ando, Yulong Li 2023-05-09
11631809 In-memory resistive random access memory XOR logic using complimentary switching Takashi Ando, Guy M. Cohen 2023-04-18
11631462 Temperature assisted programming of flash memory for neuromorphic computing Takashi Ando, Bahman Hekmatshoartabari, Alexander Reznicek 2023-04-18
11563173 PCM cell with resistance drift correction Heng Wu, Ruilong Xie, Cheng-Wei Cheng 2023-01-24
11557342 Multi-level cell threshold voltage operation of one-selector-one-resistor structure included in a crossbar array Wei-Chih Chien, Matthew J. BrightSky, Christopher P. Miller, Hsiang-Lan Lung 2023-01-17
11456308 Low-voltage flash memory integrated with a vertical field effect transistor Bahman Hekmatshoartabari, Alexander Reznicek, Takashi Ando 2022-09-27
11437102 Memory erasure using proximity heaters Guy M. Cohen, Takashi Ando 2022-09-06
11430510 Multi-level ferroelectric field-effect transistor devices Takashi Ando, Guy M. Cohen 2022-08-30
11322202 Semiconductor logic circuits including a non-volatile memory cell Takashi Ando, Guy M. Cohen 2022-05-03
11302810 Ferroelectric field effect transistor with nanowire core Takashi Ando, Guy M. Cohen 2022-04-12
11232824 Non-volatile analog resistive memory cells implementing ferroelectric select transistors Takashi Ando 2022-01-25
11177225 Semiconductor device including physical unclonable function Bahman Hekmatshoartabari, Takashi Ando, Alexander Reznicek 2021-11-16
11145814 Phase change memory with conductive bridge filament Takashi Ando, Guy M. Cohen 2021-10-12
11139025 Multi-level cell threshold voltage operation of one-selector-one-resistor structure included in a crossbar array Wei-Chih Chien, Matthew J. BrightSky, Christopher P. Miller, Hsiang-Lan Lung 2021-10-05
11004511 Memory device having separate programming and resistance readout control Guy M. Cohen, Takashi Ando 2021-05-11
10832773 Architecture for enabling zero value shifting Seyoung Kim, Tayfun Gokmen, Wanki Kim 2020-11-10
10784313 Integrated resistive processing unit to avoid abrupt set of RRAM and abrupt reset of PCM Takashi Ando, Guy M. Cohen 2020-09-22