Issued Patents All Time
Showing 1–25 of 56 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12342736 | Phase-change memory cell with mixed-material switchable region | Cheng-Wei Cheng, Guy M. Cohen, Robert L. Bruce, Asit Ray, Wanki Kim | 2025-06-24 |
| 12004434 | Fill-in confined cell PCM devices | Praneet Adusumilli, Guy M. Cohen, Robert L. Bruce | 2024-06-04 |
| 11889773 | Multi-layer phase change memory device | Kevin W. Brew, Injo Ok, Jin-Ping Han, Timothy Mathew Philip, Nicole Saulnier | 2024-01-30 |
| 11723293 | Reactivation of a deposited metal liner | Robert L. Bruce, Cheng-Wei Cheng | 2023-08-08 |
| 11647683 | Phase change memory cell with a thermal barrier layer | Praneet Adusumilli | 2023-05-09 |
| 11621394 | Multi-layer phase change memory device | Kevin W. Brew, Injo Ok, Jin-Ping Han, Timothy Mathew Philip, Nicole Saulnier | 2023-04-04 |
| 11562931 | 3D stackable bidirectional access device for memory array | Fabio Carta | 2023-01-24 |
| 11557342 | Multi-level cell threshold voltage operation of one-selector-one-resistor structure included in a crossbar array | Nanbo Gong, Wei-Chih Chien, Christopher P. Miller, Hsiang-Lan Lung | 2023-01-17 |
| 11557343 | Pulsing synaptic devices based on phase-change memory to increase the linearity in weight update | Fabio Carta, Wanki Kim, Maxence Bouvier, Sangbum Kim | 2023-01-17 |
| 11456417 | Integrated phase change memory cell projection liner and etch stop layer | Kevin W. Brew, Injo Ok, Iqbal Rashid Saraf, Nicole Saulnier, Robert L. Bruce | 2022-09-27 |
| 11355706 | Single-sided liner PCM cell for 3D crossbar PCM memory | Robert L. Bruce, Sangbum Kim | 2022-06-07 |
| 11257866 | Integrated reactive material erasure element with phase change memory | Cyril Cabral, Jr., Kenneth P. Rodbell | 2022-02-22 |
| 11139025 | Multi-level cell threshold voltage operation of one-selector-one-resistor structure included in a crossbar array | Nanbo Gong, Wei-Chih Chien, Christopher P. Miller, Hsiang-Lan Lung | 2021-10-05 |
| 10971546 | Crosspoint phase change memory with crystallized silicon diode access device | Fabio Carta, Bahman Hekmatshoartabari, Asit Ray, Wanki Kim | 2021-04-06 |
| 10930705 | Crystallized silicon vertical diode on BEOL for access device for confined PCM arrays | Fabio Carta, Chung H. Lam, Bahman Hekmatshoartabari | 2021-02-23 |
| 10886464 | Selective phase change material growth in high aspect ratio dielectric pores for semiconductor device fabrication | Robert L. Bruce, Takeshi Masuda | 2021-01-05 |
| 10833123 | Phase change memory array with integrated polycrystalline diodes | Bahman Hekmatshoartabari, Chung H. Lam, Fabio Carta | 2020-11-10 |
| 10825514 | Bipolar switching operation of confined phase change memory for a multi-level cell memory | Wanki Kim, Yu Zhu, Yujun Xie | 2020-11-03 |
| 10808316 | Composition control of chemical vapor deposition nitrogen doped germanium antimony tellurium | Fabio Carta, Takeshi Masuda, Gloria W.Y. Fraczak, Robert L. Bruce, Norma E. Sosa | 2020-10-20 |
| 10770656 | Method for manufacturing phase change memory | Gloria Wing Yun Fraczak, Chung H. Lam, Fabio Carta, Robert L. Bruce, Takeshi Masuda +1 more | 2020-09-08 |
| 10763374 | Crystallized silicon vertical diode on BEOL for access device for confined PCM arrays | Fabio Carta, Chung H. Lam, Bahman Hekmatshoartabari | 2020-09-01 |
| 10763307 | Stackable cross-point phase-change material memory array with a resistive liner | Fabio Carta, Chung H. Lam, Robert L. Bruce | 2020-09-01 |
| 10707417 | Single-sided liner PCM cell for 3D crossbar PCM memory | Robert L. Bruce, Sangbum Kim | 2020-07-07 |
| 10622562 | Crosspoint fill-in memory cell with etched access device | — | 2020-04-14 |
| 10566531 | Crosspoint fill-in memory cell with etched access device | — | 2020-02-18 |