| 12402544 |
Antenna assisted ReRAM formation |
Youngseok Kim, Soon-Cheon Seo, Alexander Reznicek |
2025-08-26 |
|
| 12329045 |
Phase change memory programming current leakage reduction |
Soon-Cheon Seo, Alexander Reznicek, Youngseok Kim, Timothy Mathew Philip |
2025-06-10 |
|
| 12324365 |
Proximity heater to lower RRAM forming voltage |
Timothy Mathew Philip, Jin-Ping Han, Ching-Tzu Chen, Kevin W. Brew |
2025-06-03 |
|
| 12317764 |
Uniform voltage drop in arrays of memory devices |
Soon-Cheon Seo, Alexander Reznicek, Youngseok Kim |
2025-05-27 |
|
| 12310263 |
Phase change memory gaps |
Soon-Cheon Seo, Alexander Reznicek, Oleg Gluschenkov |
2025-05-20 |
|
| 12310264 |
Phase change memory using multiple phase change layers and multiple heat conductors |
Balasubramanian Pranatharthiharan, Kevin W. Brew, Wei Wang |
2025-05-20 |
|
| 12250889 |
Phase change memory cell with double active volume |
Timothy Mathew Philip, Jin-Ping Han, Kevin W. Brew, Ching-Tzu Chen |
2025-03-11 |
|
| 12237368 |
Semiconductor structures including middle-of-line (MOL) capacitance reduction for self-aligned contact in gate stack |
Balasubramanian Pranatharthiharan, Soon-Cheon Seo, Charan V. Surisetty |
2025-02-25 |
|
| 12183826 |
Vertical field effect transistor with low-resistance bottom source-drain contact |
Choonghyun Lee, Soon-Cheon Seo, Alexander Reznicek |
2024-12-31 |
$22,533,000 |
| 12150393 |
Heater for phase change material memory cell |
Victor Chan, Jin-Ping Han, Samuel S. Choi |
2024-11-19 |
$17,641,000 |
| 12144270 |
Back end of line embedded RRAM structure with grain growth enhancement |
Oleg Gluschenkov, Alexander Reznicek, Soon-Cheon Seo |
2024-11-12 |
$15,831,000 |
| 12144271 |
Back end of line embedded RRAM structure with low forming voltage |
Oleg Gluschenkov, Alexander Reznicek, Youngseok Kim, Soon-Cheon Seo |
2024-11-12 |
$15,831,000 |
| 12010930 |
Wrap-around projection liner for AI device |
Hsueh-Chung Chen, Mary Claire Silvestre, Yann Mignot |
2024-06-11 |
$12,881,000 |
| 11980111 |
Confined bridge cell phase change memory |
Andrew H. Simon, Kevin W. Brew, Muthumanickam Sankarapandian, Steven Michael McDermott, Nicole Saulnier |
2024-05-07 |
$15,644,000 |
| 11957069 |
Contact resistance of a metal liner in a phase change memory cell |
Oleg Gluschenkov, Alexander Reznicek, Soon-Cheon Seo |
2024-04-09 |
$10,928,000 |
| 11930724 |
Phase change memory cell spacer |
Nicole Saulnier, Muthumanickam Sankarapandian, Andrew H. Simon, Steven Michael McDermott, Iqbal Rashid Saraf |
2024-03-12 |
$11,845,000 |
| 11889773 |
Multi-layer phase change memory device |
Kevin W. Brew, Jin-Ping Han, Timothy Mathew Philip, Matthew J. BrightSky, Nicole Saulnier |
2024-01-30 |
$13,656,000 |
| 11800817 |
Phase change memory cell galvanic corrosion prevention |
Nicole Saulnier, Kevin W. Brew, Steven Michael McDermott, Lawrence A. Clevenger, Hari Prasad Amanapu +2 more |
2023-10-24 |
$9,282,000 |
| 11737379 |
Antenna assisted ReRAM formation |
Youngseok Kim, Soon-Cheon Seo, Alexander Reznicek |
2023-08-22 |
$5,113,000 |
| 11711989 |
Phase change memory |
Alexander Reznicek, Soon-Cheon Seo, Youngseok Kim, Timothy Mathew Philip |
2023-07-25 |
$11,323,000 |
| 11659780 |
Phase change memory structure with efficient heating system |
Alexander Reznicek, Choonghyun Lee, Soon-Cheon Seo |
2023-05-23 |
$8,730,000 |
| 11621394 |
Multi-layer phase change memory device |
Kevin W. Brew, Jin-Ping Han, Timothy Mathew Philip, Matthew J. BrightSky, Nicole Saulnier |
2023-04-04 |
$5,091,000 |
| 11615842 |
Mixed conducting volatile memory element for accelerated writing of nonvolatile memristive device |
Kevin W. Brew, Wei Wang, Lan Yu, Youngseok Kim |
2023-03-28 |
$13,323,000 |
| 11588103 |
Resistive memory array |
Youngseok Kim, Choonghyun Lee, Timothy Mathew Philip, Soon-Cheon Seo, Alexander Reznicek |
2023-02-21 |
$5,683,000 |
| 11522045 |
Semiconductor structures including middle-of-line (MOL) capacitance reduction for self-aligned contact in gate stack |
Balasubramanian Pranatharthiharan, Soon-Cheon Seo, Charan V. V. S. Surisetty |
2022-12-06 |
$10,320,000 |
