Issued Patents All Time
Showing 26–50 of 150 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11476418 | Phase change memory cell with a projection liner | Ruqiang Bao, Andrew H. Simon, Kevin W. Brew, Nicole Saulnier, Iqbal Rashid Saraf +1 more | 2022-10-18 |
| 11456415 | Phase change memory cell with a wrap around and ring type of electrode contact and a projection liner | Ruqiang Bao, Andrew H. Simon, Kevin W. Brew, Nicole Saulnier, Iqbal Rashid Saraf +2 more | 2022-09-27 |
| 11456417 | Integrated phase change memory cell projection liner and etch stop layer | Kevin W. Brew, Iqbal Rashid Saraf, Nicole Saulnier, Matthew J. BrightSky, Robert L. Bruce | 2022-09-27 |
| 11430514 | Setting an upper bound on RRAM resistance | Youngseok Kim, Soon-Cheon Seo, Choonghyun Lee, Alexander Reznicek | 2022-08-30 |
| 11328954 | Bi metal subtractive etch for trench and via formation | Yann Mignot, Chanro Park, Chih-Chao Yang, Hsueh-Chung Chen | 2022-05-10 |
| 11282947 | Heterojunction bipolar transistor with a silicon oxide layer on a silicon germanium base | Alexander Reznicek, Choonghyun Lee, Soon-Cheon Seo | 2022-03-22 |
| 11271151 | Phase change memory using multiple phase change layers and multiple heat conductors | Balasubramanian Pranatharthiharan, Kevin W. Brew, Wei Wang | 2022-03-08 |
| 11264569 | Phase change memory device | Kevin W. Brew, Timothy Mathew Philip, Muthumanickam Sankarapandian, Sanjay C. Mehta, Nicole Saulnier +1 more | 2022-03-01 |
| 11245025 | Gate last vertical transport field effect transistor | Choonghyun Lee, Soon-Cheon Seo, Alexander Reznicek | 2022-02-08 |
| 11244870 | Maskless top source/drain epitaxial growth on vertical transport field effect transistor | Choonghyun Lee, Shogo Mochizuki, Soon-Cheon Seo | 2022-02-08 |
| 11201092 | Gate channel length control in VFET | Choonghyun Lee, Soon-Cheon Seo, Alexander Reznicek | 2021-12-14 |
| 11196000 | Low forming voltage non-volatile memory (NVM) | Youngseok Kim, Alexander Reznicek, Soon-Cheon Seo | 2021-12-07 |
| 11177437 | Alignment through topography on intermediate component for memory device patterning | Hao Tang, Michael Rizzolo, Theodorus E. Standaert | 2021-11-16 |
| 11158788 | Atomic layer deposition and physical vapor deposition bilayer for additive patterning | Kevin W. Brew, Iqbal Rashid Saraf, Nicole Saulnier, Praneet Adusumilli | 2021-10-26 |
| 11139380 | Vertical fin-type bipolar junction transistor with self-aligned base contact | Choonghyun Lee, Seyoung Kim, Soon-Cheon Seo | 2021-10-05 |
| 11069686 | Techniques for enhancing vertical gate-all-around FET performance | Choonghyun Lee, Soon-Cheon Seo, Seyoung Kim | 2021-07-20 |
| 11063216 | Confined phase change memory with double air gap | Balasubramanian Pranatharthiharan, Wei Wang | 2021-07-13 |
| 11043598 | Vertical field effect transistor with low-resistance bottom source-drain contact | Choonghyun Lee, Soon-Cheon Seo, Alexander Reznicek | 2021-06-22 |
| 11038064 | Vertical nano-wire complimentary metal-oxide-semiconductor transistor with cylindrical III-V compound and germanium channel | Choonghyun Lee, Soon-Cheon Seo | 2021-06-15 |
| 11038055 | Method and structure of improving contact resistance for passive and long channel devices | Soon-Cheon Seo, Balasubramanian Pranatharthiharan, Charan V. Surisetty | 2021-06-15 |
| 11011429 | Minimize middle-of-line contact line shorts | Balasubramanian Pranatharthiharan, Soon-Cheon Seo, Charan V. Surisetty | 2021-05-18 |
| 10991537 | Vertical vacuum channel transistor | Choonghyun Lee, Soon-Cheon Seo, Seyoung Kim | 2021-04-27 |
| 10985257 | Vertical transport fin field effect transistor with asymmetric channel profile | Choonghyun Lee, Brent A. Anderson, Soon-Cheon Seo | 2021-04-20 |
| 10971585 | Gate spacer and inner spacer formation for nanosheet transistors having relatively small space between adjacent gates | Choonghyun Lee, Soon-Cheon Seo, Wenyu Xu | 2021-04-06 |
| 10950549 | ILD gap fill for memory device stack array | Soon-Cheon Seo, Alexander Reznicek, Choonghyun Lee | 2021-03-16 |