Issued Patents All Time
Showing 25 most recent of 122 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12250835 | Isolation between vertically stacked nanosheet devices | Shogo Mochizuki | 2025-03-11 |
| 12224203 | Air gap spacer formation for nano-scale semiconductor devices | Kangguo Cheng, Thomas J. Haigh, Jr., Juntao Li, Eric G. Liniger, Son V. Nguyen +2 more | 2025-02-11 |
| 11658062 | Air gap spacer formation for nano-scale semiconductor devices | Kangguo Cheng, Thomas J. Haigh, Jr., Juntao Li, Eric G. Liniger, Son V. Nguyen +2 more | 2023-05-23 |
| 11456415 | Phase change memory cell with a wrap around and ring type of electrode contact and a projection liner | Injo Ok, Ruqiang Bao, Andrew H. Simon, Kevin W. Brew, Nicole Saulnier +2 more | 2022-09-27 |
| 11302797 | Approach to bottom dielectric isolation for vertical transport fin field effect transistors | Zhenxing Bi, Thamarai S. Devarajan, Balasubramanian Pranatharthiharan, Muthumanickam Sankarapandian | 2022-04-12 |
| 11264569 | Phase change memory device | Injo Ok, Kevin W. Brew, Timothy Mathew Philip, Muthumanickam Sankarapandian, Nicole Saulnier +1 more | 2022-03-01 |
| 11171204 | High thermal budget compatible punch through stop integration using doped glass | Kangguo Cheng, Xin Miao, Chun-Chen Yeh | 2021-11-09 |
| 11152460 | High thermal budget compatible punch through stop integration using doped glass | Kangguo Cheng, Xin Miao, Chun-Chen Yeh | 2021-10-19 |
| 10892339 | Gate first technique in vertical transport FET using doped silicon gates with silicide | Ruqiang Bao, Hemanth Jagannathan, Paul C. Jamison, Choonghyun Lee, Vijay Narayanan | 2021-01-12 |
| 10879375 | Gate tie-down enablement with inner spacer | Su Chen Fan, Andre P. Labonte, Lars Liebmann | 2020-12-29 |
| 10840354 | Approach to bottom dielectric isolation for vertical transport fin field effect transistors | Zhenxing Bi, Thamarai S. Devarajan, Balasubramanian Pranatharthiharan, Muthumanickam Sankarapandian | 2020-11-17 |
| 10784258 | Selective contact etch for unmerged epitaxial source/drain regions | Alexander Reznicek | 2020-09-22 |
| 10784371 | Self aligned top extension formation for vertical transistors | Oleg Gluschenkov, Shogo Mochizuki, Alexander Reznicek | 2020-09-22 |
| 10707326 | Vertical field-effect-transistors having a silicon oxide layer with controlled thickness | Chi-Chun Liu, Luciana Meli, Muthumanickam Sankarapandian, Kristin Schmidt, Ankit Vora | 2020-07-07 |
| 10692985 | Protection of high-K dielectric during reliability anneal on nanosheet structures | Nicolas Loubet, Vijay Narayanan, Muthumanickam Sankarapandian | 2020-06-23 |
| 10651308 | Self aligned top extension formation for vertical transistors | Oleg Gluschenkov, Shogo Mochizuki, Alexander Reznicek | 2020-05-12 |
| 10629702 | Approach to bottom dielectric isolation for vertical transport fin field effect transistors | Zhenxing Bi, Thamarai S. Devarajan, Balasubramanian Pranatharthiharan, Muthumanickam Sankarapandian | 2020-04-21 |
| 10580855 | High thermal budget compatible punch through stop integration using doped glass | Kangguo Cheng, Xin Miao, Chun-Chen Yeh | 2020-03-03 |
| 10580854 | High thermal budget compatible punch through stop integration using doped glass | Kangguo Cheng, Xin Miao, Chun-Chen Yeh | 2020-03-03 |
| 10529828 | Method of forming vertical transistor having dual bottom spacers | Oleg Gluschenkov, Shogo Mochizuki, Alexander Reznicek | 2020-01-07 |
| 10522654 | Gate tie-down enablement with inner spacer | Su Chen Fan, Andre P. Labonte, Lars Liebmann | 2019-12-31 |
| 10418277 | Air gap spacer formation for nano-scale semiconductor devices | Kangguo Cheng, Thomas J. Haigh, Jr., Juntao Li, Eric G. Liniger, Son V. Nguyen +2 more | 2019-09-17 |
| 10366988 | Selective contact etch for unmerged epitaxial source/drain regions | Alexander Reznicek | 2019-07-30 |
| 10355109 | Spacer formation on semiconductor device | Thamarai S. Devarajan, Eric R. Miller, Soon-Cheon Seo | 2019-07-16 |
| 10332977 | Gate tie-down enablement with inner spacer | Su Chen Fan, Andre P. Labonte, Lars Liebmann | 2019-06-25 |