Issued Patents All Time
Showing 26–50 of 122 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10304936 | Protection of high-K dielectric during reliability anneal on nanosheet structures | Nicolas Loubet, Vijay Narayanan, Muthumanickam Sankarapandian | 2019-05-28 |
| 10269652 | Vertical transistor top epitaxy source/drain and contact structure | Oleg Gluschenkov, Shogo Mochizuki, Alexander Reznicek | 2019-04-23 |
| 10262904 | Vertical transistor top epitaxy source/drain and contact structure | Oleg Gluschenkov, Shogo Mochizuki, Alexander Reznicek | 2019-04-16 |
| 10256320 | Vertical field-effect-transistors having a silicon oxide layer with controlled thickness | Chi-Chun Liu, Luciana Meli, Muthumanickam Sankarapandian, Kristin Schmidt, Ankit Vora | 2019-04-09 |
| 10236360 | Method of forming vertical transistor having dual bottom spacers | Oleg Gluschenkov, Shogo Mochizuki, Alexander Reznicek | 2019-03-19 |
| 10229982 | Pure boron for silicide contact | Chia-Yu Chen, Zuoguang Liu, Tenko Yamashita | 2019-03-12 |
| 10170479 | Fabrication of vertical doped fins for complementary metal oxide semiconductor field effect transistors | Kangguo Cheng, Zuoguang Liu, Tenko Yamashita | 2019-01-01 |
| 10128352 | Gate tie-down enablement with inner spacer | Su Chen Fan, Andre P. Labonte, Lars Liebmann | 2018-11-13 |
| 10115629 | Air gap spacer formation for nano-scale semiconductor devices | Kangguo Cheng, Thomas J. Haigh, Jr., Juntao Li, Eric G. Liniger, Son V. Nguyen +2 more | 2018-10-30 |
| 10079299 | Self aligned top extension formation for vertical transistors | Oleg Gluschenkov, Shogo Mochizuki, Alexander Reznicek | 2018-09-18 |
| 10056382 | Modulating transistor performance | Dechao Guo, Juntao Li, Robert R. Robison, Huimei Zhou | 2018-08-21 |
| 10014299 | Field effect transistor device spacers | Xiuyu Cai, Tenko Yamashita | 2018-07-03 |
| 9985096 | High thermal budget compatible punch through stop integration using doped glass | Kangguo Cheng, Xin Miao, Chun-Chen Yeh | 2018-05-29 |
| 9954103 | Bottom spacer formation for vertical transistor | Oleg Gluschenkov, Shogo Mochizuki, Alexander Reznicek | 2018-04-24 |
| 9953976 | Effective device formation for advanced technology nodes with aggressive fin-pitch scaling | Injo Ok, Balasubramanian Pranatharthiharan, Soon-Cheon Seo, Charan V. Surisetty | 2018-04-24 |
| 9941391 | Method of forming vertical transistor having dual bottom spacers | Oleg Gluschenkov, Shogo Mochizuki, Alexander Reznicek | 2018-04-10 |
| 9941163 | Gate tie-down enablement with inner spacer | Su Chen Fan, Andre P. Labonte, Lars Liebmann | 2018-04-10 |
| 9929049 | Gate tie-down enablement with inner spacer | Su Chen Fan, Andre P. Labonte, Lars Liebmann | 2018-03-27 |
| 9923074 | Pure boron for silicide contact | Chia-Yu Chen, Zuoguang Liu, Tenko Yamashita | 2018-03-20 |
| 9911823 | POC process flow for conformal recess fill | Andrew M. Greene, Balasubramanian Pranatharthiharan, Ruilong Xie | 2018-03-06 |
| 9911831 | Spacer formation on semiconductor device | Thamarai S. Devarajan, Eric R. Miller, Soon-Cheon Seo | 2018-03-06 |
| 9899259 | Gate tie-down enablement with inner spacer | Su Chen Fan, Andre P. Labonte, Lars Liebmann | 2018-02-20 |
| 9892961 | Air gap spacer formation for nano-scale semiconductor devices | Kangguo Cheng, Thomas J. Haigh, Jr., Juntao Li, Eric G. Liniger, Son V. Nguyen +2 more | 2018-02-13 |
| 9876091 | Divot-free planarization dielectric layer for replacement gate | Hemanth Jagannathan | 2018-01-23 |
| 9871041 | Fabrication of vertical doped fins for complementary metal oxide semiconductor field effect transistors | Kangguo Cheng, Zuoguang Liu, Tenko Yamashita | 2018-01-16 |