Issued Patents All Time
Showing 25 most recent of 225 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12389582 | High density stacked vertical transistor static random access memory structure | Brent A. Anderson, Albert M. Chu, Junli Wang | 2025-08-12 |
| 12356711 | Late gate extension | Ruilong Xie, Christopher J. Waskiewicz, Jay William Strane, Brent A. Anderson | 2025-07-08 |
| 12356685 | Looped long channel field-effect transistor | Ruilong Xie, Ardasheir Rahman, Robert R. Robison, Brent A. Anderson, Heng Wu | 2025-07-08 |
| 12310090 | CMOS top source/drain region doping and epitaxial growth for a vertical field effect transistor | Heng Wu, Ruilong Xie, Su Chen Fan, Jay William Strane | 2025-05-20 |
| 12268030 | Self-aligned C-shaped vertical field effect transistor | Ruilong Xie, Robert R. Robison, Jay William Strane | 2025-04-01 |
| 11973125 | Self-aligned uniform bottom spacers for VTFETS | Ruilong Xie, Jay William Strane, Eric R. Miller | 2024-04-30 |
| 11908923 | Low-resistance top contact on VTFET | Christopher J. Waskiewicz, Su Chen Fan, Hari Prasad Amanapu | 2024-02-20 |
| 11855191 | Vertical FET with contact to gate above active fin | Brent A. Anderson, Junli Wang, Indira Seshadri, Chen Zhang, Ruilong Xie +1 more | 2023-12-26 |
| 11842998 | Semiconductor device and method of forming the semiconductor device | Robin Hsin Kuo Chao, Choonghyun Lee, Chun Wing Yeung, Jingyun Zhang | 2023-12-12 |
| 11742426 | Forming crossbar and non-crossbar transistors on the same substrate | Indira Seshadri, Ardasheir Rahman, Ruilong Xie | 2023-08-29 |
| 11742246 | Local isolation of source/drain for reducing parasitic capacitance in vertical field effect transistors | Ruilong Xie, Christopher J. Waskiewicz, Alexander Reznicek | 2023-08-29 |
| 11646373 | Vertical field effect transistor with bottom spacer | Christopher J. Waskiewicz, Ruilong Xie, Jay William Strane | 2023-05-09 |
| 11615990 | CMOS top source/drain region doping and epitaxial growth for a vertical field effect transistor | Heng Wu, Ruilong Xie, Su Chen Fan, Jay William Strane | 2023-03-28 |
| 11575022 | Vertical field-effect transistor late gate recess process with improved inter-layer dielectric protection | Wenyu Xu, Ruilong Xie, Pietro Montanini | 2023-02-07 |
| 11393725 | Multi-metal dipole doping to offer multi-threshold voltage pairs without channel doping for highly scaling CMOS device | Ruqiang Bao, Vijay Narayanan, Terence B. Hook | 2022-07-19 |
| 11322588 | Contact source/drain resistance | Fee Li Lie, Choonghyun Lee, Kangguo Cheng, Oleg Gluschenkov | 2022-05-03 |
| 11271106 | Replacement metal gate process for vertical transport field-effect transistor with self-aligned shared contacts | Ruqiang Bao, Brent A. Anderson, Choonghyun Lee | 2022-03-08 |
| 11257721 | Replacement metal gate process for vertical transport field-effect transistors with multiple threshold voltages | Ruqiang Bao, Brent A. Anderson, Choonghyun Lee | 2022-02-22 |
| 11251287 | Self-aligned uniform bottom spacers for VTFETS | Ruilong Xie, Jay William Strane, Eric R. Miller | 2022-02-15 |
| 11251285 | Approach to control over-etching of bottom spacers in vertical fin field effect transistor devices | Ruqiang Bao, Paul C. Jamison, Choonghyun Lee | 2022-02-15 |
| 11239360 | Vertical transport field effect transistor structure with self-aligned top junction through early top source/drain epitaxy | Shogo Mochizuki, Brent A. Anderson, Junli Wang | 2022-02-01 |
| 11239119 | Replacement bottom spacer for vertical transport field effect transistors | Ruilong Xie, Heng Wu, Jay William Strane, Lan Yu, Tao Li | 2022-02-01 |
| 11217692 | Vertical field effect transistor with bottom spacer | Christopher J. Waskiewicz, Ruilong Xie, Jay William Strane | 2022-01-04 |
| 11217450 | Device with pure silicon oxide layer on silicon-germanium layer | Takashi Ando, Pouya Hashemi, Choonghyun Lee, Vijay Narayanan | 2022-01-04 |
| 11211379 | Fabrication of field effect transistors with different threshold voltages through modified channel interfaces | Takashi Ando, Ruqiang Bao, Choonghyun Lee | 2021-12-28 |