| 12464809 |
Vertical field effect transistor with minimal contact to gate erosion |
Su Chen Fan, Yann Mignot, Jeffrey C. Shearer, Hemanth Jagannathan |
2025-11-04 |
|
| 12356711 |
Late gate extension |
Ruilong Xie, Jay William Strane, Hemanth Jagannathan, Brent A. Anderson |
2025-07-08 |
|
| 12249643 |
Stacked planar field effect transistors with 2D material channels |
Andrew Gaul, Julien Frougier, Ruilong Xie, Andrew M. Greene |
2025-03-11 |
|
| 12243770 |
Hard mask removal without damaging top epitaxial layer |
Chanro Park, Yann Mignot, Daniel J. Vincent, Su Chen Fan, Hsueh-Chung Chen |
2025-03-04 |
|
| 12136656 |
Semiconductor structure having two-dimensional channel |
Andrew Gaul, Julien Frougier, Ruilong Xie, Andrew M. Greene, Kangguo Cheng |
2024-11-05 |
$24,022,000 |
| 12009422 |
Self aligned top contact for vertical transistor |
Choonghyun Lee, Chanro Park, Alexander Reznicek |
2024-06-11 |
$12,881,000 |
| 11916013 |
Via interconnects including super vias |
Yann Mignot, Eric R. Miller, Chanro Park |
2024-02-27 |
$9,833,000 |
| 11908923 |
Low-resistance top contact on VTFET |
Su Chen Fan, Hari Prasad Amanapu, Hemanth Jagannathan |
2024-02-20 |
$7,691,000 |
| 11901440 |
Sacrificial fin for self-aligned contact rail formation |
Yann Mignot, Su Chen Fan, Brent A. Anderson, Junli Wang |
2024-02-13 |
$14,886,000 |
| 11876124 |
Vertical transistor having an oxygen-blocking layer |
Chen Zhang, Shahab Siddiqui, Ruilong Xie |
2024-01-16 |
$9,068,000 |
| 11876023 |
Conformal film thickness determination using angled geometric features and vertices tracking |
Marc A. Bergendahl, Christopher J. Penny, James J. Demarest, Jean Wynne, Jonathan Fry |
2024-01-16 |
$9,068,000 |
| 11742350 |
Metal gate N/P boundary control by active gate cut and recess |
Andrew Gaul, Chanro Park, Julien Frougier, Ruilong Xie, Andrew M. Greene |
2023-08-29 |
$6,011,000 |
| 11742246 |
Local isolation of source/drain for reducing parasitic capacitance in vertical field effect transistors |
Ruilong Xie, Hemanth Jagannathan, Alexander Reznicek |
2023-08-29 |
$6,011,000 |
| 11742354 |
Top epitaxial layer and contact for VTFET |
Ruilong Xie, Alexander Reznicek, Su Chen Fan, Heng Wu |
2023-08-29 |
$6,011,000 |
| 11646373 |
Vertical field effect transistor with bottom spacer |
Ruilong Xie, Jay William Strane, Hemanth Jagannathan |
2023-05-09 |
$3,203,000 |
| 11646358 |
Sacrificial fin for contact self-alignment |
Yann Mignot, Indira Seshadri, Su Chen Fan, Eric R. Miller |
2023-05-09 |
$3,203,000 |
| 11495538 |
Fully aligned via for interconnect |
Ruilong Xie, Chih-Chao Yang, Lawrence A. Clevenger, Ashim Dutta |
2022-11-08 |
$10,347,000 |
| 11476346 |
Vertical transistor having an oxygen-blocking top spacer |
Chen Zhang, Shahab Siddiqui, Ruilong Xie |
2022-10-18 |
$6,904,000 |
| 11351811 |
Optically-passive magnetic signature and identification feature with electromagnetic tamper detection |
Michael Rizzolo, Marc A. Bergendahl, Christopher J. Penny |
2022-06-07 |
$7,305,000 |
| 11316029 |
Sacrificial fin for contact self-alignment |
Yann Mignot, Indira Seshadri, Su Chen Fan, Eric R. Miller |
2022-04-26 |
$5,083,000 |
| 11263059 |
Load leveler |
Jonathan Fry, Christopher J. Penny, Marc A. Bergendahl, Jean Wynne, James J. Demarest |
2022-03-01 |
$6,542,000 |
| 11244861 |
Method and structure for forming fully-aligned via |
Ruilong Xie, Chih-Chao Yang, Huai Huang |
2022-02-08 |
$4,353,000 |
| 11239165 |
Method of forming an interconnect structure with enhanced corner connection |
Ruilong Xie, Kangguo Cheng, Chih-Chao Yang |
2022-02-01 |
$4,586,000 |
| 11217692 |
Vertical field effect transistor with bottom spacer |
Ruilong Xie, Jay William Strane, Hemanth Jagannathan |
2022-01-04 |
$22,913,000 |
| 11211291 |
Via formation with robust hardmask removal |
Ruilong Xie, Kangguo Cheng, Chih-Chao Yang |
2021-12-28 |
$7,175,000 |
