Issued Patents All Time
Showing 1–25 of 54 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12268627 | Fluid collection assemblies including at least one securement body | Ashley Marie Johannes, Kathleen Davis | 2025-04-08 |
| 12076498 | Carrying and storage case for external catheter system | Kyle Daw | 2024-09-03 |
| 12068415 | Precise bottom junction formation for vertical transport field effect transistor with highly doped epitaxial source/drain, sharp junction gradient, and/or reduced parasitic capacitance | Kai Zhao, Daniel James Dechene, Rishikesh Krishnan, Charlotte DeWan Adams | 2024-08-20 |
| 11961895 | Gate stacks with multiple high-κ dielectric layers | Ruqiang Bao, Ravikumar Ramachandran, Barry P. Linder, Elnatan Mataev | 2024-04-16 |
| 11888048 | Gate oxide for nanosheet transistor devices | Koji Watanabe, Charlotte DeWan Adams, Kai Zhao, Daniel James Dechene, Rishikesh Krishnan | 2024-01-30 |
| 11876124 | Vertical transistor having an oxygen-blocking layer | Chen Zhang, Christopher J. Waskiewicz, Ruilong Xie | 2024-01-16 |
| 11515427 | Precise bottom junction formation for vertical transport field effect transistor with highly doped epitaxial source/drain, sharp junction gradient, and/or reduced parasitic capacitance | Kai Zhao, Daniel James Dechene, Rishikesh Krishnan, Charlotte DeWan Adams | 2022-11-29 |
| 11476346 | Vertical transistor having an oxygen-blocking top spacer | Chen Zhang, Christopher J. Waskiewicz, Ruilong Xie | 2022-10-18 |
| 11211474 | Gate oxide for nanosheet transistor devices | Koji Watanabe, Charlotte DeWan Adams, Kai Zhao, Daniel James Dechene, Rishikesh Krishnan | 2021-12-28 |
| 10438853 | Methods, apparatus and system for forming a FinFET device comprising a first portion capable of operating at a first voltage and a second portion capable of operating at a second voltage | Beth Baumert, Abu Naser Zainuddin, Luigi Pantisano | 2019-10-08 |
| 10395993 | Methods and structure to form high K metal gate stack with single work-function metal | Takashi Ando, Balaji Kannan, Siddarth A. Krishnan, Unoh Kwon | 2019-08-27 |
| 10361289 | Gate oxide formation through hybrid methods of thermal and deposition processes and method for producing the same | Wei Zhao, Haiting Wang, Ting-Hsiang Hung, Yiheng Xu, Beth Baumert +4 more | 2019-07-23 |
| 10106892 | Thermal oxide equivalent low temperature ALD oxide for dual purpose gate oxide and method for producing the same | Abu Naser Zainuddin, Beth Baumert, Suresh Uppal | 2018-10-23 |
| 9806161 | Integrated circuit structure having thin gate dielectric device and thick gate dielectric device | Shahrukh Khan, Unoh Kwon, Sean M. Polvino, Joseph F. Shepard, Jr. | 2017-10-31 |
| 9741720 | Higher ‘K’ gate dielectric cap for replacement metal gate (RMG) FINFET devices | Balaji Kannan, Siddarth A. Krishnan | 2017-08-22 |
| 9741657 | TSV deep trench capacitor and anti-fuse structure | Ronald G. Filippi, Erdem Kaltalioglu, Ping-Chuan Wang, Lijuan Zhang | 2017-08-22 |
| 9673108 | Fabrication of higher-K dielectrics | Michael P. Chudzik, Min Dai, Dominic J. Schepis | 2017-06-06 |
| 9515164 | Methods and structure to form high K metal gate stack with single work-function metal | Takashi Ando, Balaji Kannan, Siddarth A. Krishnan, Unoh Kwon | 2016-12-06 |
| 9478425 | Fabrication of higher-k dielectrics | Michael P. Chudzik, Min Dai, Dominic J. Schepis | 2016-10-25 |
| 9368593 | Multiple thickness gate dielectrics for replacement gate field effect transistors | Unoh Kwon, Wing L. Lai, Vijay Narayanan, Sean M. Polvino, Ravikumar Ramachandran | 2016-06-14 |
| 9252232 | Multi-plasma nitridation process for a gate dielectric | Michael P. Chudzik, Barry P. Linder | 2016-02-02 |
| 9224826 | Multiple thickness gate dielectrics for replacement gate field effect transistors | Unoh Kwon, Wing L. Lai, Vijay Narayanan, Sean M. Polvino, Ravikumar Ramachandran | 2015-12-29 |
| 9224740 | High-K dielectric structure for deep trench isolation | Sean M. Polvino | 2015-12-29 |
| 9196700 | Multi-plasma nitridation process for a gate dielectric | Michael P. Chudzik, Barry P. Linder | 2015-11-24 |
| 9177868 | Annealing oxide gate dielectric layers for replacement metal gate field effect transistors | Unoh Kwon, Wing L. Lai, Vijay Narayanan, Ravikumar Ramachandran | 2015-11-03 |