Issued Patents All Time
Showing 25 most recent of 111 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12424591 | Method and structure of forming independent contact for staggered CFET | Ruilong Xie, Albert M. Chu, Albert M. Young, Brent A. Anderson, Junli Wang | 2025-09-23 |
| 12412829 | Method and structure of forming sidewall contact for stacked FET | Ruilong Xie, Julien Frougier, Su Chen Fan, Oleg Gluschenkov | 2025-09-09 |
| 12341099 | Semiconductor backside transistor integration with backside power delivery network | Ruilong Xie, Daniel C. Edelstein, Rajiv V. Joshi, Eric R. Miller | 2025-06-24 |
| 12328859 | Stacked FET SRAM | Ruilong Xie, Carl Radens, Albert M. Chu, Brent A. Anderson, Junli Wang +1 more | 2025-06-10 |
| 11961895 | Gate stacks with multiple high-κ dielectric layers | Ruqiang Bao, Barry P. Linder, Shahab Siddiqui, Elnatan Mataev | 2024-04-16 |
| 11935929 | High aspect ratio shared contacts | Ruilong Xie, Julien Frougier, Su Chen Fan, Nicolas Loubet | 2024-03-19 |
| 11895818 | Stacked FET SRAM | Ruilong Xie, Carl Radens, Junli Wang, Julien Frougier, Dechao Guo | 2024-02-06 |
| 11139299 | FinFET based ZRAM with convex channel region | Reinaldo Vega | 2021-10-05 |
| 10832971 | Fabricating tapered semiconductor devices | Rajasekhar Venigalla, Albert M. Chu, Alan C. Thomas, Kafai Lai | 2020-11-10 |
| 10693005 | Reliable gate contacts over active areas | Emre Alptekin, Albert M. Chu, Eric Eastman, Myung-Hee Na | 2020-06-23 |
| 10573646 | Preserving channel strain in fin cuts | Andrew M. Greene, Dechao Guo, Rajasekhar Venigalla | 2020-02-25 |
| 10424574 | Standard cell architecture with at least one gate contact over an active area | Albert M. Chu, Myung-Hee Na | 2019-09-24 |
| 10424576 | Standard cell architecture with at least one gate contact over an active area | Albert M. Chu, Myung-Hee Na | 2019-09-24 |
| 10403628 | Finfet based ZRAM with convex channel region | Reinaldo Vega | 2019-09-03 |
| 10381480 | Reliable gate contacts over active areas | Emre Alptekin, Albert M. Chu, Eric Eastman, Myung-Hee Na | 2019-08-13 |
| 10256238 | Preserving channel strain in fin cuts | Andrew M. Greene, Dechao Guo, Rajasekhar Venigalla | 2019-04-09 |
| 10242980 | Semiconductor fin isolation by a well trapping fin portion | Henry K. Utomo, Kangguo Cheng, Ramachandra Divakaruni, Huiling Shang, Reinaldo Vega | 2019-03-26 |
| 10242918 | Shallow trench isolation structures and contact patterning | Andrew M. Greene, Rajasekhar Venigalla | 2019-03-26 |
| 10177154 | Structure and method to prevent EPI short between trenches in FinFET eDRAM | Michael V. Aquilino, Veeraraghavan S. Basker, Kangguo Cheng, Gregory Costrini, Ali Khakifirooz +5 more | 2019-01-08 |
| 10177039 | Shallow trench isolation structures and contact patterning | Andrew M. Greene, Rajasekhar Venigalla | 2019-01-08 |
| 10128239 | Preserving channel strain in fin cuts | Andrew M. Greene, Dechao Guo, Rajasekhar Venigalla | 2018-11-13 |
| 10083865 | Partial spacer for increasing self aligned contact process margins | Emre Alptekin, Viraj Y. Sardesai, Reinaldo Vega | 2018-09-25 |
| 10074562 | Self aligned contact structure | Rosa A. Orozco-Teran, John A. Fitzsimmons, Russell H. Arndt, David L. Rath | 2018-09-11 |
| 9985104 | Contact first replacement metal gate | Emre Alptekin, Viraj Y. Sardesai | 2018-05-29 |
| 9929047 | Partial spacer for increasing self aligned contact process margins | Emre Alptekin, Viraj Y. Sardesai, Reinaldo Vega | 2018-03-27 |