| 12484265 |
Subtractive source drain contact for stacked devices |
Heng Wu, Junli Wang, Ruinan Xie, Albert Young, Albert M. Chu +1 more |
2025-11-25 |
|
| 12424591 |
Method and structure of forming independent contact for staggered CFET |
Ruilong Xie, Albert M. Chu, Albert M. Young, Brent A. Anderson, Junli Wang |
2025-09-23 |
|
| 12412829 |
Method and structure of forming sidewall contact for stacked FET |
Ruilong Xie, Julien Frougier, Su Chen Fan, Oleg Gluschenkov |
2025-09-09 |
|
| 12341099 |
Semiconductor backside transistor integration with backside power delivery network |
Ruilong Xie, Daniel C. Edelstein, Rajiv V. Joshi, Eric R. Miller |
2025-06-24 |
|
| 12328859 |
Stacked FET SRAM |
Ruilong Xie, Carl Radens, Albert M. Chu, Brent A. Anderson, Junli Wang +1 more |
2025-06-10 |
|
| 11961895 |
Gate stacks with multiple high-κ dielectric layers |
Ruqiang Bao, Barry P. Linder, Shahab Siddiqui, Elnatan Mataev |
2024-04-16 |
$17,011,000 |
| 11935929 |
High aspect ratio shared contacts |
Ruilong Xie, Julien Frougier, Su Chen Fan, Nicolas Loubet |
2024-03-19 |
$12,891,000 |
| 11895818 |
Stacked FET SRAM |
Ruilong Xie, Carl Radens, Junli Wang, Julien Frougier, Dechao Guo |
2024-02-06 |
$12,408,000 |
| 11139299 |
FinFET based ZRAM with convex channel region |
Reinaldo Vega |
2021-10-05 |
$5,888,000 |
| 10832971 |
Fabricating tapered semiconductor devices |
Rajasekhar Venigalla, Albert M. Chu, Alan C. Thomas, Kafai Lai |
2020-11-10 |
$848,000 |
| 10693005 |
Reliable gate contacts over active areas |
Emre Alptekin, Albert M. Chu, Eric Eastman, Myung-Hee Na |
2020-06-23 |
$2,380,000 |
| 10573646 |
Preserving channel strain in fin cuts |
Andrew M. Greene, Dechao Guo, Rajasekhar Venigalla |
2020-02-25 |
$1,919,000 |
| 10424574 |
Standard cell architecture with at least one gate contact over an active area |
Albert M. Chu, Myung-Hee Na |
2019-09-24 |
$3,094,000 |
| 10424576 |
Standard cell architecture with at least one gate contact over an active area |
Albert M. Chu, Myung-Hee Na |
2019-09-24 |
$3,094,000 |
| 10403628 |
Finfet based ZRAM with convex channel region |
Reinaldo Vega |
2019-09-03 |
$15,611,000 |
| 10381480 |
Reliable gate contacts over active areas |
Emre Alptekin, Albert M. Chu, Eric Eastman, Myung-Hee Na |
2019-08-13 |
$1,909,000 |
| 10256238 |
Preserving channel strain in fin cuts |
Andrew M. Greene, Dechao Guo, Rajasekhar Venigalla |
2019-04-09 |
$2,400,000 |
| 10242980 |
Semiconductor fin isolation by a well trapping fin portion |
Henry K. Utomo, Kangguo Cheng, Ramachandra Divakaruni, Huiling Shang, Reinaldo Vega |
2019-03-26 |
$2,148,000 |
| 10242918 |
Shallow trench isolation structures and contact patterning |
Andrew M. Greene, Rajasekhar Venigalla |
2019-03-26 |
$2,148,000 |
| 10177154 |
Structure and method to prevent EPI short between trenches in FinFET eDRAM |
Michael V. Aquilino, Veeraraghavan S. Basker, Kangguo Cheng, Gregory Costrini, Ali Khakifirooz +5 more |
2019-01-08 |
$2,287,000 |
| 10177039 |
Shallow trench isolation structures and contact patterning |
Andrew M. Greene, Rajasekhar Venigalla |
2019-01-08 |
$2,287,000 |
| 10128239 |
Preserving channel strain in fin cuts |
Andrew M. Greene, Dechao Guo, Rajasekhar Venigalla |
2018-11-13 |
$2,931,000 |
| 10083865 |
Partial spacer for increasing self aligned contact process margins |
Emre Alptekin, Viraj Y. Sardesai, Reinaldo Vega |
2018-09-25 |
$2,527,000 |
| 10074562 |
Self aligned contact structure |
Rosa A. Orozco-Teran, John A. Fitzsimmons, Russell H. Arndt, David L. Rath |
2018-09-11 |
$4,894,000 |
| 9985104 |
Contact first replacement metal gate |
Emre Alptekin, Viraj Y. Sardesai |
2018-05-29 |
$2,015,000 |
