Issued Patents All Time
Showing 25 most recent of 128 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12432960 | Wraparound contact with reduced distance to channel | Ruilong Xie, Reinaldo Vega, Yao Yao, Veeraraghavan S. Basker, Pietro Montanini +2 more | 2025-09-30 |
| RE50613 | FinFET gate cut after dummy gate removal | John R. Sporre, Siva Kanakasabapathy, Jeffrey C. Shearer, Nicole Saulnier | 2025-09-30 |
| 12426314 | Strain generation and anchoring in gate-all-around field effect transistors | Julien Frougier, Sung-Dae Suk, Kangguo Cheng, Ruilong Xie | 2025-09-23 |
| 12417944 | Formation of trench silicide source or drain contacts without gate damage | Ruilong Xie, Laertis Economikos, Veeraraghavan S. Basker, Chanro Park, Hui Zang | 2025-09-16 |
| 12402391 | Stressed material within gate cut region | Huimei Zhou, Michael P. Belyansky, Oleg Gluschenkov, Robert R. Robison, Juntao Li +2 more | 2025-08-26 |
| 12317555 | Gate-all-around nanosheet field effect transistor integrated with fin field effect transistor | Julien Frougier, Sagarika Mukesh, Ruqiang Bao, Jingyun Zhang, Nicolas Loubet +1 more | 2025-05-27 |
| 12310054 | Late replacement bottom isolation for nanosheet devices | Ruilong Xie, Julien Frougier, Veeraraghavan S. Basker | 2025-05-20 |
| 12255204 | Vertical FET replacement gate formation with variable fin pitch | Ruilong Xie, Yao Yao, Veeraraghavan S. Basker | 2025-03-18 |
| 12249643 | Stacked planar field effect transistors with 2D material channels | Andrew Gaul, Julien Frougier, Ruilong Xie, Christopher J. Waskiewicz | 2025-03-11 |
| 12224312 | Field effect transistors with bottom dielectric isolation | Julien Frougier, Ruilong Xie, Veeraraghavan S. Basker | 2025-02-11 |
| 12176404 | Wrap-around contact for nanosheet device | Ruilong Xie, Oleg Gluschenkov, Pietro Montanini | 2024-12-24 |
| 12136656 | Semiconductor structure having two-dimensional channel | Andrew Gaul, Julien Frougier, Ruilong Xie, Christopher J. Waskiewicz, Kangguo Cheng | 2024-11-05 |
| 12100746 | Gate-all-around field effect transistor with bottom dielectric isolation | Julien Frougier, Nicolas Loubet, Ruilong Xie, Maruf Amin Bhuiyan, Veeraraghavan S. Basker | 2024-09-24 |
| 12100744 | Wrap around contact process margin improvement with early contact cut | Ruilong Xie, Veeraraghavan S. Basker, Alexander Reznicek, Yao Yao | 2024-09-24 |
| 12074165 | Gate cut with integrated etch stop layer | Marc A. Bergendahl, Rajasekhar Venigalla | 2024-08-27 |
| 11990508 | Dual step etch-back inner spacer formation | Yao Yao, Ruilong Xie, Veeraraghavan S. Basker | 2024-05-21 |
| 11990342 | Metal cut patterning and etching to minimize interlayer dielectric layer loss | Kisup Chung, Ekmini Anuja De Silva, Siva Kanakasabapathy, Indira Seshadri | 2024-05-21 |
| 11942557 | Nanosheet transistor with enhanced bottom isolation | Lan Yu, Wenyu Xu, Heng Wu | 2024-03-26 |
| 11908743 | Planar devices with consistent base dielectric | Huimei Zhou, Julien Frougier, Ruqiang Bao, Jingyun Zhang, Miaomiao Wang +1 more | 2024-02-20 |
| 11894436 | Gate-all-around monolithic stacked field effect transistors having multiple threshold voltages | Julien Frougier, Ruilong Xie, Nicolas Loubet, Veeraraghavan S. Basker, Balasubramanian Pranatharthiharan | 2024-02-06 |
| 11894361 | Co-integrated logic, electrostatic discharge, and well contact devices on a substrate | Julien Frougier, Sagarika Mukesh, Anthony I. Chou, Ruilong Xie, Veeraraghavan S. Basker +4 more | 2024-02-06 |
| 11876136 | Transistor having wrap-around source/drain contacts and under-contact spacers | Yi Song, Praveen Joseph, Kangguo Cheng | 2024-01-16 |
| 11776957 | Gate cut with integrated etch stop layer | Marc A. Bergendahl, Rajasekhar Venigalla | 2023-10-03 |
| 11757012 | Source and drain contact cut last process to enable wrap-around-contact | Dechao Guo, Tenko Yamashita, Veeraraghavan S. Basker, Robert R. Robison, Ardasheir Rahman | 2023-09-12 |
| 11742350 | Metal gate N/P boundary control by active gate cut and recess | Andrew Gaul, Chanro Park, Julien Frougier, Ruilong Xie, Christopher J. Waskiewicz | 2023-08-29 |