| 12431469 |
Vertically stacked FET with strained channel |
Shogo Mochizuki, Kangguo Cheng |
2025-09-30 |
|
| 12402391 |
Stressed material within gate cut region |
Huimei Zhou, Andrew M. Greene, Michael P. Belyansky, Oleg Gluschenkov, Robert R. Robison +2 more |
2025-08-26 |
|
| 12402545 |
Stacked cross-point phase change memory |
Kangguo Cheng, Carl Radens, Ruilong Xie |
2025-08-26 |
|
| 12396225 |
Method to release nano sheet after nano sheet fin recess |
Chanro Park, Kangguo Cheng, Ruilong Xie, Choonghyun Lee |
2025-08-19 |
|
| 12396247 |
Work function metal patterning for nanosheet CFETs |
Ruilong Xie, Chen Zhang, Kangguo Cheng |
2025-08-19 |
|
| 12382708 |
Vertical stacked nanosheet CMOS transistors with different work function metals |
Kangguo Cheng, Ruilong Xie, Chanro Park |
2025-08-05 |
|
| 12376503 |
Phase change material including deuterium |
Kangguo Cheng, Arthur Roy Gasasira, LOUIS ZUOGUANG LIU, Amlan Majumdar |
2025-07-29 |
|
| 12369379 |
Nanosheet transistor |
Kangguo Cheng, Heng Wu, Peng Xu |
2025-07-22 |
|
| RE50494 |
Self-forming embedded diffusion barriers |
Cyril Cabral, Jr., Daniel C. Edelstein, Takeshi Nogami |
2025-07-15 |
|
| 12362004 |
Scaled 2T DRAM |
Min Gyu Sung, Julien Frougier, Ruilong Xie, Chanro Park |
2025-07-15 |
|
| 12324184 |
Replacement gate cross-couple for static random-access memory scaling |
Ruilong Xie, Carl Radens, Kangguo Cheng, Veeraraghavan S. Basker |
2025-06-03 |
|
| 12317762 |
Vertical phase change memory device |
Kangguo Cheng, Carl Radens, Ruilong Xie |
2025-05-27 |
|
| 12317763 |
Memory cell with comb-shaped electrodes |
Kangguo Cheng, Carl Radens, Ruilong Xie |
2025-05-27 |
|
| 12310267 |
ReRAM module with intermediate electrode |
Kangguo Cheng, Kevin W. Brew, Dexin Kong |
2025-05-20 |
|
| 12310265 |
Dome-shaped phase change memory mushroom cell |
Kangguo Cheng, LOUIS ZUOGUANG LIU, Arthur Roy Gasasira |
2025-05-20 |
|
| 12310262 |
Phase change memory with encapsulated phase change element |
Dexin Kong, Kangguo Cheng, Zheng Xu |
2025-05-20 |
|
| 12279452 |
Stacked complementary transistor structure for three-dimensional integration |
Kangguo Cheng, Shogo Mochizuki |
2025-04-15 |
|
| 12274186 |
Low current phase-change memory device |
Kangguo Cheng, Ruilong Xie, Julien Frougier |
2025-04-08 |
|
| 12274185 |
Phase change memory cell having pillar bottom electrode with improved thermal insulation |
Ruilong Xie, Kangguo Cheng, Carl Radens |
2025-04-08 |
|
| 12256653 |
PCM cell with nanoheater surrounded with airgaps |
Kangguo Cheng, Dexin Kong, Ruilong Xie |
2025-03-18 |
|
| 12245530 |
Phase change memory with concentric ring-shaped heater |
Kangguo Cheng, Carl Radens, Ruilong Xie, Praneet Adusumilli, Oscar van der Straten +1 more |
2025-03-04 |
|
| 12224203 |
Air gap spacer formation for nano-scale semiconductor devices |
Kangguo Cheng, Thomas J. Haigh, Jr., Eric G. Liniger, Sanjay C. Mehta, Son V. Nguyen +2 more |
2025-02-11 |
|
| 12219884 |
Phase change memory with conductive rings |
Kangguo Cheng, Carl Radens, Ruilong Xie, Praneet Adusumilli, Oscar van der Straten +3 more |
2025-02-04 |
|
| 12219885 |
Reducing contact resistance of phase change memory bridge cell |
Kangguo Cheng, Zuoguang Liu, Arthur Roy Gasasira |
2025-02-04 |
|
| 12207570 |
Phase change memory with multi-level programming |
Ching-Tzu Chen, Kangguo Cheng, Carl Radens |
2025-01-21 |
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