| 12513985 |
CFET with independent gate control and low parasitic capacitance |
Ruinan Xie, Kangguo Cheng, Juchuan Li |
2025-12-30 |
|
| 12490507 |
Different dimensions across active region for stronger via to backside power rail |
Ruinan Xie, Albert M. Chu, Brent A. Anderson |
2025-12-02 |
|
| 12464696 |
Static random access memory device with stacked FETs |
Huimei Zhou, Changsong Zhang, Junli Wang, Min Wang |
2025-11-04 |
|
| 12453294 |
Multi-level programming of phase change memory device |
Kangguo Cheng, Juchuan Li, Ching-Tzu Chen |
2025-10-21 |
|
| 12424539 |
Local enlarged via-to-backside power rail |
Ruilong Xie, Albert M. Chu, Brent A. Anderson |
2025-09-23 |
|
| 12419024 |
High density static random-access memory |
Brent A. Anderson, Ruilong Xie, Albert M. Chu |
2025-09-16 |
|
| 12402545 |
Stacked cross-point phase change memory |
Kangguo Cheng, Ruilong Xie, Juntao Li |
2025-08-26 |
|
| 12400871 |
Metal lines with low via-to-via spacing |
Daniel James Dechene, Somnath Ghosh, Hsueh-Chung Chen, Lawrence A. Clevenger |
2025-08-26 |
|
| 12387983 |
Forming self-aligned vias and air-gaps in semiconductor fabrication |
Lawrence A. Clevenger, John H. Zhang |
2025-08-12 |
|
| 12374615 |
Electronic devices with a low dielectric constant |
Hsueh-Chung Chen, Su Chen Fan, Dechao Guo, Indira Seshadri |
2025-07-29 |
|
| 12349406 |
Hybrid gate cut for stacked transistors |
Ruilong Xie, Chen Zhang, Jingyun Zhang |
2025-07-01 |
|
| 12342578 |
Stacked layer memory suitable for SRAM and having a long cell |
Brent A. Anderson, Albert M. Chu, Ruilong Xie, Junli Wang |
2025-06-24 |
|
| 12328935 |
Integrated input output and logic device for nanosheet technology |
Maruf Amin Bhuiyan, Ardasheir Rahman, Kevin W. Brew |
2025-06-10 |
|
| 12328859 |
Stacked FET SRAM |
Ruilong Xie, Albert M. Chu, Brent A. Anderson, Junli Wang, Julien Frougier +1 more |
2025-06-10 |
|
| 12324184 |
Replacement gate cross-couple for static random-access memory scaling |
Ruilong Xie, Kangguo Cheng, Veeraraghavan S. Basker, Juntao Li |
2025-06-03 |
|
| 12317762 |
Vertical phase change memory device |
Kangguo Cheng, Juntao Li, Ruilong Xie |
2025-05-27 |
|
| 12317763 |
Memory cell with comb-shaped electrodes |
Juntao Li, Kangguo Cheng, Ruilong Xie |
2025-05-27 |
|
| 12295133 |
SRAM with backside cross-couple |
Ruilong Xie, Albert M. Chu, Kisik Choi |
2025-05-06 |
|
| 12274185 |
Phase change memory cell having pillar bottom electrode with improved thermal insulation |
Juntao Li, Ruilong Xie, Kangguo Cheng |
2025-04-08 |
|
| 12255651 |
Reconfigurable ring oscillator (RO) physical unclonable function (PUF) |
Kangguo Cheng, Julien Frougier, Ruilong Xie |
2025-03-18 |
|
| 12245530 |
Phase change memory with concentric ring-shaped heater |
Kangguo Cheng, Juntao Li, Ruilong Xie, Praneet Adusumilli, Oscar van der Straten +1 more |
2025-03-04 |
|
| 12219884 |
Phase change memory with conductive rings |
Kangguo Cheng, Juntao Li, Ruilong Xie, Praneet Adusumilli, Oscar van der Straten +3 more |
2025-02-04 |
|
| 12207570 |
Phase change memory with multi-level programming |
Ching-Tzu Chen, Juntao Li, Kangguo Cheng |
2025-01-21 |
|
| 12113067 |
Forming N-type and P-type horizontal gate-all-around devices |
Ruilong Xie, Kangguo Cheng, Juntao Li |
2024-10-08 |
$24,159,000 |
| 12087691 |
Semiconductor structures with backside gate contacts |
Ruilong Xie, Julien Frougier, Veeraraghavan S. Basker, Lawrence A. Clevenger, Nicolas Loubet +3 more |
2024-09-10 |
$19,991,000 |
