Issued Patents All Time
Showing 25 most recent of 462 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12432960 | Wraparound contact with reduced distance to channel | Ruilong Xie, Reinaldo Vega, Yao Yao, Andrew M. Greene, Pietro Montanini +2 more | 2025-09-30 |
| 12417944 | Formation of trench silicide source or drain contacts without gate damage | Andrew M. Greene, Ruilong Xie, Laertis Economikos, Chanro Park, Hui Zang | 2025-09-16 |
| 12414328 | Co-integrating gate-all-around nanosheet transistors and comb-nanosheet transistors | Huimei Zhou, Julien Frougier, Nicolas Loubet, Ruilong Xie, Miaomiao Wang | 2025-09-09 |
| 12376369 | FinFET devices | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2025-07-29 |
| 12324184 | Replacement gate cross-couple for static random-access memory scaling | Ruilong Xie, Carl Radens, Kangguo Cheng, Juntao Li | 2025-06-03 |
| 12317555 | Gate-all-around nanosheet field effect transistor integrated with fin field effect transistor | Julien Frougier, Sagarika Mukesh, Ruqiang Bao, Andrew M. Greene, Jingyun Zhang +1 more | 2025-05-27 |
| 12310054 | Late replacement bottom isolation for nanosheet devices | Ruilong Xie, Andrew M. Greene, Julien Frougier | 2025-05-20 |
| 12255204 | Vertical FET replacement gate formation with variable fin pitch | Ruilong Xie, Yao Yao, Andrew M. Greene | 2025-03-18 |
| 12224312 | Field effect transistors with bottom dielectric isolation | Julien Frougier, Ruilong Xie, Andrew M. Greene | 2025-02-11 |
| 12119341 | Electrostatic discharge diode having dielectric isolation layer | Huimei Zhou, Julien Frougier, Xuefeng Liu, Jingyun Zhang, Lan Yu +2 more | 2024-10-15 |
| 12119393 | Punch through stopper in bulk finFET device | Zuoguang Liu, Tenko Yamashita, Chun-Chen Yeh | 2024-10-15 |
| 12100746 | Gate-all-around field effect transistor with bottom dielectric isolation | Julien Frougier, Nicolas Loubet, Andrew M. Greene, Ruilong Xie, Maruf Amin Bhuiyan | 2024-09-24 |
| 12100744 | Wrap around contact process margin improvement with early contact cut | Ruilong Xie, Andrew M. Greene, Alexander Reznicek, Yao Yao | 2024-09-24 |
| 12087691 | Semiconductor structures with backside gate contacts | Ruilong Xie, Julien Frougier, Lawrence A. Clevenger, Nicolas Loubet, Dechao Guo +3 more | 2024-09-10 |
| 12009435 | Integrated nanosheet field effect transistors and floating gate memory cells | Ruilong Xie, Julien Frougier, Alexander Reznicek | 2024-06-11 |
| 11990508 | Dual step etch-back inner spacer formation | Andrew M. Greene, Yao Yao, Ruilong Xie | 2024-05-21 |
| 11955526 | Thick gate oxide device option for nanosheet device | Ruilong Xie, Kangguo Cheng, Julien Frougier, Chanro Park | 2024-04-09 |
| 11894436 | Gate-all-around monolithic stacked field effect transistors having multiple threshold voltages | Julien Frougier, Ruilong Xie, Nicolas Loubet, Andrew M. Greene, Balasubramanian Pranatharthiharan | 2024-02-06 |
| 11894361 | Co-integrated logic, electrostatic discharge, and well contact devices on a substrate | Julien Frougier, Sagarika Mukesh, Anthony I. Chou, Andrew M. Greene, Ruilong Xie +4 more | 2024-02-06 |
| 11887890 | Partial self-aligned contact for MOL | Ruilong Xie, Alexander Reznicek, Junli Wang | 2024-01-30 |
| 11862710 | Vertical transistor including symmetrical source/drain extension junctions | Chun-Chen Yeh, Alexander Reznicek, Junli Wang | 2024-01-02 |
| 11757012 | Source and drain contact cut last process to enable wrap-around-contact | Andrew M. Greene, Dechao Guo, Tenko Yamashita, Robert R. Robison, Ardasheir Rahman | 2023-09-12 |
| 11710768 | Hybrid diffusion break with EUV gate patterning | Eric R. Miller, Indira Seshadri, Andrew M. Greene, Julien Frougier | 2023-07-25 |
| 11695057 | Protective bilayer inner spacer for nanosheet devices | Yao Yao, Ruilong Xie, Andrew M. Greene | 2023-07-04 |
| 11688741 | Gate-all-around devices with isolated and non-isolated epitaxy regions for strain engineering | Andrew M. Greene, Julien Frougier, Jingyun Zhang, Sung-Dae Suk, Ruilong Xie | 2023-06-27 |