Issued Patents All Time
Showing 1–25 of 150 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12219884 | Phase change memory with conductive rings | Kangguo Cheng, Carl Radens, Juntao Li, Ruilong Xie, Praneet Adusumilli +3 more | 2025-02-04 |
| 12219885 | Reducing contact resistance of phase change memory bridge cell | Kangguo Cheng, Juntao Li, Arthur Roy Gasasira | 2025-02-04 |
| 12119393 | Punch through stopper in bulk finFET device | Veeraraghavan S. Basker, Tenko Yamashita, Chun-Chen Yeh | 2024-10-15 |
| 11694958 | Layout design for threshold voltage tuning | Huimei Zhou, Su Chen Fan, Miaomiao Wang | 2023-07-04 |
| 11562906 | Low resistance source drain contact formation with trench metastable alloys and laser annealing | Oleg Gluschenkov, Shogo Mochizuki, Hiroaki Niimi, Tenko Yamashita, Chun-Chen Yeh | 2023-01-24 |
| 11545624 | Phase change memory cell resistive liner | Kangguo Cheng, Juntao Li, Ruilong Xie | 2023-01-03 |
| 11404560 | Punch through stopper in bulk finFET device | Veeraraghavan S. Basker, Tenko Yamashita, Chun-Chen Yeh | 2022-08-02 |
| 11164787 | Two-stage top source drain epitaxy formation for vertical field effect transistors enabling gate last formation | Alexander Reznicek, Chun-Chen Yeh, Ruilong Xie | 2021-11-02 |
| 11075280 | Self-aligned gate and junction for VTFET | Kangguo Cheng, Oleg Gluschenkov, Muthumanickam Sankarapandian | 2021-07-27 |
| 11062960 | Shared contact trench comprising dual silicide layers and dual epitaxial layers for source/drain layers of NFET and PFET devices | Heng Wu, Kangguo Cheng, Junli Wang | 2021-07-13 |
| 11038041 | Composite spacer enabling uniform doping in recessed fin devices | Veeraraghavan S. Basker, Tenko Yamashita, Chun-Chen Yeh | 2021-06-15 |
| 11024738 | Measurement of top contact resistance in vertical field-effect transistor devices | Richard Southwick, Xin Miao, Chun Wing Yeung | 2021-06-01 |
| 10985073 | Vertical field effect transistor replacement metal gate fabrication | Ruilong Xie, Wenyu Xu, Brent A. Anderson | 2021-04-20 |
| 10957605 | VFET device design for top contact resistance measurement | Chen Zhang | 2021-03-23 |
| 10950492 | Fabrication of vertical transport fin field effect transistors with a self-aligned separator and an isolation region with an air gap | Kangguo Cheng, Sebastian Naczas, Heng Wu, Peng Xu | 2021-03-16 |
| 10916471 | Dual silicide liner flow for enabling low contact resistance | Praneet Adusumilli, Veeraraghavan S. Basker, Tenko Yamashita, Chun-Chen Yeh | 2021-02-09 |
| 10854733 | Composite spacer enabling uniform doping in recessed fin devices | Veeraraghavan S. Basker, Tenko Yamashita, Chun-Chen Yeh | 2020-12-01 |
| 10784365 | Fin field effect transistor fabrication and devices having inverted T-shaped gate | Veeraraghavan S. Basker, Tenko Yamashita, Chun-Chen Yeh | 2020-09-22 |
| 10693007 | Wrapped contacts with enhanced area | Kangguo Cheng, Heng Wu, Peng Xu | 2020-06-23 |
| 10685961 | Contact formation in semiconductor devices | Oleg Gluschenkov, Hiroaki Niimi, Joseph S. Washington, Tenko Yamashita | 2020-06-16 |
| 10658387 | Extremely thin silicon-on-insulator silicon germanium device without edge strain relaxation | Kangguo Cheng, Juntao Li, Xin Miao | 2020-05-19 |
| 10629709 | Punch through stopper in bulk finFET device | Veeraraghavan S. Basker, Tenko Yamashita, Chun-Chen Yeh | 2020-04-21 |
| 10622257 | VFET device design for top contact resistance measurement | Chen Zhang | 2020-04-14 |
| 10586769 | Contact formation in semiconductor devices | Oleg Gluschenkov, Jiseok Kim, Shogo Mochizuki, Hiroaki Niimi | 2020-03-10 |
| 10573567 | Sacrificial cap for forming semiconductor contact | Praneet Adusumilli, Shogo Mochizuki, Jie Yang, Chun Wing Yeung | 2020-02-25 |