Issued Patents All Time
Showing 1–15 of 15 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10950492 | Fabrication of vertical transport fin field effect transistors with a self-aligned separator and an isolation region with an air gap | Kangguo Cheng, Zuoguang Liu, Heng Wu, Peng Xu | 2021-03-16 |
| 10811599 | Co-fabrication of magnetic device structures with electrical interconnects having reduced resistance through increased conductor grain size | Lawrence A. Clevenger, Liying Jiang, Michael Rizzolo, Chih-Chao Yang | 2020-10-20 |
| 10756260 | Co-fabrication of magnetic device structures with electrical interconnects having reduced resistance through increased conductor grain size | Lawrence A. Clevenger, Liying Jiang, Michael Rizzolo, Chih-Chao Yang | 2020-08-25 |
| 10559491 | Fabrication of vertical transport fin field effect transistors with a self-aligned separator and an isolation region with an air gap | Kangguo Cheng, Zuoguang Liu, Heng Wu, Peng Xu | 2020-02-11 |
| 10381262 | Fabrication of vertical transport fin field effect transistors with a self-aligned separator and an isolation region with an air gap | Kangguo Cheng, Zuoguang Liu, Heng Wu, Peng Xu | 2019-08-13 |
| 10361364 | Co-fabrication of magnetic device structures with electrical interconnects having reduced resistance through increased conductor grain size | Lawrence A. Clevenger, Liying Jiang, Michael Rizzolo, Chih-Chao Yang | 2019-07-23 |
| 10312132 | Forming sacrificial endpoint layer for deep STI recess | Kangguo Cheng, Juntao Li, Peng Xu | 2019-06-04 |
| 10056289 | Fabrication of vertical transport fin field effect transistors with a self-aligned separator and an isolation region with an air gap | Kangguo Cheng, Zuoguang Liu, Heng Wu, Peng Xu | 2018-08-21 |
| 9768262 | Embedded carbon-doped germanium as stressor for germanium nFET devices | Jeffrey L. Dittmar, Keith E. Fogel, Alexander Reznicek, Devendra K. Sadana | 2017-09-19 |
| 9419138 | Embedded carbon-doped germanium as stressor for germanium nFET devices | Jeffrey L. Dittmar, Keith E. Fogel, Alexander Reznicek, Devendra K. Sadana | 2016-08-16 |
| 9305883 | Locally raised epitaxy for improved contact by local silicon capping during trench silicide processings | Vamsi K. Paruchuri, Alexander Reznicek, Dominic J. Schepis | 2016-04-05 |
| 9231061 | Fabrication of surface textures by ion implantation for antireflection of silicon crystals | Mengbing Huang, Nirag Kadakia, Hassaram Bakhru | 2016-01-05 |
| 8999779 | Locally raised epitaxy for improved contact by local silicon capping during trench silicide processings | Vamsi K. Paruchuri, Alexander Reznicek, Dominic J. Schepis | 2015-04-07 |
| 8900934 | FinFET devices containing merged epitaxial Fin-containing contact regions | Thomas N. Adam, Veeraraghavan S. Basker, Jinghong Li, Chung-Hsun Lin, Alexander Reznicek +1 more | 2014-12-02 |
| 8896063 | FinFET devices containing merged epitaxial Fin-containing contact regions | Thomas N. Adam, Veeraraghavan S. Basker, Jinghong Li, Chung-Hsun Lin, Alexander Reznicek +1 more | 2014-11-25 |