Issued Patents All Time
Showing 25 most recent of 141 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11233137 | Transistors and methods of forming transistors using vertical nanowires | Alexander Reznicek | 2022-01-25 |
| 10680085 | Transistor structure with varied gate cross-sectional area | Alexander Reznicek, Pranita Kerber, Qiqing C. Ouyang | 2020-06-09 |
| 10658494 | Transistors and methods of forming transistors using vertical nanowires | Alexander Reznicek | 2020-05-19 |
| 10643907 | Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step | Pranita Kerber, Qiqing C. Ouyang, Alexander Reznicek | 2020-05-05 |
| 10453959 | Fin replacement in a field-effect transistor | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2019-10-22 |
| 10438858 | Low-cost SOI FinFET technology | Stephen W. Bedell, Joel P. de Souza, Alexander Reznicek, Devendra K. Sadana | 2019-10-08 |
| 10211320 | Fin cut without residual fin defects | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2019-02-19 |
| 10204837 | Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step | Pranita Kerber, Qiqing C. Ouyang, Alexander Reznicek | 2019-02-12 |
| 10199220 | Semiconductor structure having insulator pillars and semiconductor material on substrate | Alexander Reznicek, Kangguo Cheng, Bruce B. Doris, Pouya Hashemi | 2019-02-05 |
| 10177168 | Fin field-effect transistor having an oxide layer under one or more of the plurality of fins | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2019-01-08 |
| 10170304 | Self-aligned nanotube structures | Oh-Jung Kwon, Claude Ortolland, Christopher N. Collins | 2019-01-01 |
| 10032870 | Low defect III-V semiconductor template on porous silicon | Joel P. de Souza, Keith E. Fogel, Alexander Reznicek | 2018-07-24 |
| 10014322 | Local SOI fins with multiple heights | Kangguo Cheng, Joel P. de Souza, Ali Khakifirooz, Alexander Reznicek | 2018-07-03 |
| 10002798 | Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step | Pranita Kerber, Qiqing C. Ouyang, Alexander Reznicek | 2018-06-19 |
| 10002948 | FinFET having highly doped source and drain regions | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2018-06-19 |
| 9972620 | Preventing shorting between source and/or drain contacts and gate | Charan V. Surisetty, Kangguo Cheng, Alexander Reznicek | 2018-05-15 |
| 9966457 | Transistor structure with varied gate cross-sectional area | Alexander Reznicek, Pranita Kerber, Qiqing C. Ouyang | 2018-05-08 |
| 9935181 | FinFET having highly doped source and drain regions | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2018-04-03 |
| 9899274 | Low-cost SOI FinFET technology | Stephen W. Bedell, Joel P. de Souza, Alexander Reznicek, Devendra K. Sadana | 2018-02-20 |
| 9875939 | Methods of forming uniform and pitch independent fin recess | Yue Ke, Alexander Reznicek, Benjamin G. Moser, Melissa A. Smith, Henry K. Utomo +2 more | 2018-01-23 |
| 9812575 | Contact formation for stacked FinFETs | Alexander Reznicek, Pouya Hashemi, Kangguo Cheng | 2017-11-07 |
| 9793113 | Semiconductor structure having insulator pillars and semiconductor material on substrate | Alexander Reznicek, Kangguo Cheng, Bruce B. Doris, Pouya Hashemi | 2017-10-17 |
| 9754941 | Method and structure to form tensile strained SiGe fins and compressive strained SiGe fins on a same substrate | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2017-09-05 |
| 9735257 | finFET having highly doped source and drain regions | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2017-08-15 |
| 9728626 | Almost defect-free active channel region | Charan V. Surisetty, Kangguo Cheng, Alexander Reznicek | 2017-08-08 |