| 11233137 |
Transistors and methods of forming transistors using vertical nanowires |
Alexander Reznicek |
2022-01-25 |
$77,789,000 |
| 10680085 |
Transistor structure with varied gate cross-sectional area |
Alexander Reznicek, Pranita Kerber, Qiqing C. Ouyang |
2020-06-09 |
$60,273,000 |
| 10658494 |
Transistors and methods of forming transistors using vertical nanowires |
Alexander Reznicek |
2020-05-19 |
$54,061,000 |
| 10643907 |
Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step |
Pranita Kerber, Qiqing C. Ouyang, Alexander Reznicek |
2020-05-05 |
$3,712,000 |
| 10453959 |
Fin replacement in a field-effect transistor |
Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek |
2019-10-22 |
$3,154,000 |
| 10438858 |
Low-cost SOI FinFET technology |
Stephen W. Bedell, Joel P. de Souza, Alexander Reznicek, Devendra K. Sadana |
2019-10-08 |
$4,743,000 |
| 10211320 |
Fin cut without residual fin defects |
Kangguo Cheng, Pouya Hashemi, Alexander Reznicek |
2019-02-19 |
$3,019,000 |
| 10204837 |
Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step |
Pranita Kerber, Qiqing C. Ouyang, Alexander Reznicek |
2019-02-12 |
$5,536,000 |
| 10199220 |
Semiconductor structure having insulator pillars and semiconductor material on substrate |
Alexander Reznicek, Kangguo Cheng, Bruce B. Doris, Pouya Hashemi |
2019-02-05 |
$12,551,000 |
| 10177168 |
Fin field-effect transistor having an oxide layer under one or more of the plurality of fins |
Kangguo Cheng, Pouya Hashemi, Alexander Reznicek |
2019-01-08 |
$2,287,000 |
| 10170304 |
Self-aligned nanotube structures |
Oh-Jung Kwon, Claude Ortolland, Christopher N. Collins |
2019-01-01 |
|
| 10032870 |
Low defect III-V semiconductor template on porous silicon |
Joel P. de Souza, Keith E. Fogel, Alexander Reznicek |
2018-07-24 |
$20,009,000 |
| 10014322 |
Local SOI fins with multiple heights |
Kangguo Cheng, Joel P. de Souza, Ali Khakifirooz, Alexander Reznicek |
2018-07-03 |
$3,207,000 |
| 10002798 |
Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step |
Pranita Kerber, Qiqing C. Ouyang, Alexander Reznicek |
2018-06-19 |
$3,279,000 |
| 10002948 |
FinFET having highly doped source and drain regions |
Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek |
2018-06-19 |
$3,279,000 |
| 9972620 |
Preventing shorting between source and/or drain contacts and gate |
Charan V. Surisetty, Kangguo Cheng, Alexander Reznicek |
2018-05-15 |
$9,390,000 |
| 9966457 |
Transistor structure with varied gate cross-sectional area |
Alexander Reznicek, Pranita Kerber, Qiqing C. Ouyang |
2018-05-08 |
$5,480,000 |
| 9935181 |
FinFET having highly doped source and drain regions |
Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek |
2018-04-03 |
$2,801,000 |
| 9899274 |
Low-cost SOI FinFET technology |
Stephen W. Bedell, Joel P. de Souza, Alexander Reznicek, Devendra K. Sadana |
2018-02-20 |
$3,618,000 |
| 9875939 |
Methods of forming uniform and pitch independent fin recess |
Yue Ke, Alexander Reznicek, Benjamin G. Moser, Melissa A. Smith, Henry K. Utomo +2 more |
2018-01-23 |
$14,858,000 |
| 9812575 |
Contact formation for stacked FinFETs |
Alexander Reznicek, Pouya Hashemi, Kangguo Cheng |
2017-11-07 |
$8,746,000 |
| 9793113 |
Semiconductor structure having insulator pillars and semiconductor material on substrate |
Alexander Reznicek, Kangguo Cheng, Bruce B. Doris, Pouya Hashemi |
2017-10-17 |
$10,089,000 |
| 9754941 |
Method and structure to form tensile strained SiGe fins and compressive strained SiGe fins on a same substrate |
Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek |
2017-09-05 |
$9,231,000 |
| 9735257 |
finFET having highly doped source and drain regions |
Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek |
2017-08-15 |
$1,588,000 |
| 9728626 |
Almost defect-free active channel region |
Charan V. Surisetty, Kangguo Cheng, Alexander Reznicek |
2017-08-08 |
$10,842,000 |
