Issued Patents All Time
Showing 25 most recent of 29 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11374092 | Virtual bulk in semiconductor on insulator technology | John J. Pekarik, Vibhor Jain, Herbert L. Ho, Qizhi Liu | 2022-06-28 |
| 11217685 | Heterojunction bipolar transistor with marker layer | Herbert L. Ho, Vibhor Jain, John J. Pekarik, Judson R. Holt, Qizhi Liu +1 more | 2022-01-04 |
| 11145725 | Heterojunction bipolar transistor | Qizhi Liu, Vibhor Jain, Judson R. Holt, Herbert L. Ho, John J. Pekarik | 2021-10-12 |
| 11101357 | Asymmetric high-k dielectric for reducing gate induced drain leakage | Anthony I. Chou, Arvind Kumar, Chung-Hsun Lin, Shreesh Narasimha, Jonathan T. Shaw | 2021-08-24 |
| 10734492 | Asymmetric high-k dielectric for reducing gate induced drain leakage | Anthony I. Chou, Arvind Kumar, Chung-Hsun Lin, Shreesh Narasimha, Jonathan T. Shaw | 2020-08-04 |
| 10381452 | Asymmetric high-k dielectric for reducing gate induced drain leakage | Anthony I. Chou, Arvind Kumar, Chung-Hsun Lin, Shreesh Narasimha, Jonathan T. Shaw | 2019-08-13 |
| 10374048 | Asymmetric high-k dielectric for reducing gate induced drain leakage | Anthony I. Chou, Arvind Kumar, Chung-Hsun Lin, Shreesh Narasimha, Jonathan T. Shaw | 2019-08-06 |
| 10367072 | Asymmetric high-k dielectric for reducing gate induced drain leakage | Anthony I. Chou, Arvind Kumar, Chung-Hsun Lin, Shreesh Narasimha, Jonathan T. Shaw | 2019-07-30 |
| 10170304 | Self-aligned nanotube structures | Oh-Jung Kwon, Dominic J. Schepis, Christopher N. Collins | 2019-01-01 |
| 9953873 | Methods of modulating the morphology of epitaxial semiconductor material | Bhupesh Chandra, Gregory G. Freeman, Viorel Ontalus, Christopher D. Sheraw, Timothy J. McArdle +1 more | 2018-04-24 |
| 9922831 | Asymmetric high-k dielectric for reducing gate induced drain leakage | Anthony I. Chou, Arvind Kumar, Chung-Hsun Lin, Shreesh Narasimha, Jonathan T. Shaw | 2018-03-20 |
| 9871057 | Field-effect transistors with a non-relaxed strained channel | Karen A. Nummy | 2018-01-16 |
| 9859122 | Asymmetric high-k dielectric for reducing gate induced drain leakage | Anthony I. Chou, Arvind Kumar, Chung-Hsun Lin, Shreesh Narasimha, Jonathan T. Shaw | 2018-01-02 |
| 9837319 | Asymmetric high-K dielectric for reducing gate induced drain leakage | Anthony I. Chou, Arvind Kumar, Chung-Hsun Lin, Shreesh Narasimha, Jonathan T. Shaw | 2017-12-05 |
| 9831084 | Hydroxyl group termination for nucleation of a dielectric metallic oxide | Takashi Ando, Michael P. Chudzik, Min Dai, Martin M. Frank, David F. Hilscher +3 more | 2017-11-28 |
| 9768071 | Asymmetric high-K dielectric for reducing gate induced drain leakage | Anthony I. Chou, Arvind Kumar, Chung-Hsun Lin, Shreesh Narasimha, Jonathan T. Shaw | 2017-09-19 |
| 9722045 | Buffer layer for modulating Vt across devices | Bhupesh Chandra, Viorel Ontalus, Timothy J. McArdle, Paul Chang, Judson R. Holt | 2017-08-01 |
| 9721843 | Asymmetric high-k dielectric for reducing gate induced drain leakage | Anthony I. Chou, Arvind Kumar, Chung-Hsun Lin, Shreesh Narasimha, Jonathan T. Shaw | 2017-08-01 |
| 9685379 | Asymmetric high-k dielectric for reducing gate induced drain leakage | Anthony I. Chou, Arvind Kumar, Chung-Hsun Lin, Shreesh Narasimha, Jonathan T. Shaw | 2017-06-20 |
| 9620384 | Control of O-ingress into gate stack dielectric layer using oxygen permeable layer | Takashi Ando, Kai Zhao | 2017-04-11 |
| 9577061 | Asymmetric high-K dielectric for reducing gate induced drain leakage | Anthony I. Chou, Arvind Kumar, Chung-Hsun Lin, Shreesh Narasimha, Jonathan T. Shaw | 2017-02-21 |
| 9570354 | Asymmetric high-K dielectric for reducing gate induced drain leakage | Anthony I. Chou, Arvind Kumar, Chung-Hsun Lin, Shreesh Narasimha, Jonathan T. Shaw | 2017-02-14 |
| 9559010 | Asymmetric high-k dielectric for reducing gate induced drain leakage | Anthony I. Chou, Arvind Kumar, Chung-Hsun Lin, Shreesh Narasimha, Jonathan T. Shaw | 2017-01-31 |
| 9543213 | Asymmetric high-k dielectric for reducing gate induced drain leakage | Anthony I. Chou, Arvind Kumar, Chung-Hsun Lin, Shreesh Narasimha, Jonathan T. Shaw | 2017-01-10 |
| 9412667 | Asymmetric high-k dielectric for reducing gate induced drain leakage | Anthony I. Chou, Arvind Kumar, Chung-Hsun Lin, Shreesh Narasimha, Jonathan T. Shaw | 2016-08-09 |