| 11536708 |
Methods to fabricate dual pore devices |
Mark Saly, Keenan N. Woods, Joseph R. Johnson, Bhaskar Jyoti Bhuyan, William J. Durand +2 more |
2022-12-27 |
$54,393,000 |
| 9911597 |
Trench metal insulator metal capacitor with oxygen gettering layer |
Takashi Ando, Eduard A. Cartier, Aritra Dasgupta, Herbert L. Ho, Donghun Kang +3 more |
2018-03-06 |
$2,330,000 |
| 9831084 |
Hydroxyl group termination for nucleation of a dielectric metallic oxide |
Takashi Ando, Min Dai, Martin M. Frank, David F. Hilscher, Rishikesh Krishnan +3 more |
2017-11-28 |
$4,993,000 |
| 9793216 |
Fabrication of IC structure with metal plug |
Joyeeta Nag, Jim Shih-Chun Liang, Domingo A. Ferrer Luppi, Atsushi Ogino, Andrew H. Simon |
2017-10-17 |
$10,089,000 |
| 9748354 |
Multi-threshold voltage structures with a lanthanum nitride film and methods of formation thereof |
Wei V. Tang, Paul F. Ma, Steven C. H. Hung, Siddarth A. Krishnan, Wenyu Zhang +6 more |
2017-08-29 |
$19,098,000 |
| 9679810 |
Integrated circuit having improved electromigration performance and method of forming same |
Joyeeta Nag, Shishir Ray, Andrew H. Simon, Oleg Gluschenkov, Siddarth A. Krishnan |
2017-06-13 |
$8,890,000 |
| 9673108 |
Fabrication of higher-K dielectrics |
Min Dai, Dominic J. Schepis, Shahab Siddiqui |
2017-06-06 |
$2,871,000 |
| 9653534 |
Trench metal-insulator-metal capacitor with oxygen gettering layer |
Takashi Ando, Eduard A. Cartier, Aritra Dasgupta, Herbert L. Ho, Donghun Kang +3 more |
2017-05-16 |
$2,370,000 |
| 9627508 |
Replacement channel TFET |
Siddarth A. Krishnan, Unoh Kwon, Vijay Narayanan, Jeffrey W. Sleight |
2017-04-18 |
$12,891,000 |
| 9577100 |
FinFET and nanowire semiconductor devices with suspended channel regions and gate structures surrounding the suspended channel regions |
Kangguo Cheng, Eric C. Harley, Judson R. Holt, Yue Ke, Rishikesh Krishnan +2 more |
2017-02-21 |
$8,671,000 |
| 9564505 |
Changing effective work function using ion implantation during dual work function metal gate integration |
Martin M. Frank, Herbert L. Ho, Mark J. Hurley, Rashmi Jha, Naim Moumen +3 more |
2017-02-07 |
$20,132,000 |
| 9536985 |
Epitaxial growth of material on source/drain regions of FinFET structure |
Brian J. Greene, Eric C. Harley, Judson R. Holt, Yue Ke, Rishikesh Krishnan +2 more |
2017-01-03 |
$6,197,000 |
| 9524986 |
Trapping dislocations in high-mobility fins below isolation layer |
Ramachandra Divakaruni, Judson R. Holt, Arvind Kumar, Unoh Kwon |
2016-12-20 |
$17,295,000 |
| 9478425 |
Fabrication of higher-k dielectrics |
Min Dai, Dominic J. Schepis, Shahab Siddiqui |
2016-10-25 |
$7,053,000 |
| 9437496 |
Merged source drain epitaxy |
Brian J. Greene, Edward P. Maciejewski, Kevin McStay, Shreesh Narasimha, Chengwen Pei +1 more |
2016-09-06 |
$2,673,000 |
| 9431289 |
Method and structure to reduce FET threshold voltage shift due to oxygen diffusion |
Christopher V. Baiocco, Deleep R. Nair, Jay M. Shah |
2016-08-30 |
$3,218,000 |
| 9397177 |
Variable length multi-channel replacement metal gate including silicon hard mask |
Siddarth A. Krishnan, Unoh Kwon |
2016-07-19 |
$2,452,000 |
| 9373690 |
Variable length multi-channel replacement metal gate including silicon hard mask |
Siddarth A. Krishnan, Unoh Kwon |
2016-06-21 |
$2,461,000 |
| 9373501 |
Hydroxyl group termination for nucleation of a dielectric metallic oxide |
Takashi Ando, Min Dai, Martin M. Frank, David F. Hilscher, Rishikesh Krishnan +3 more |
2016-06-21 |
$3,815,000 |
| 9318336 |
Non-volatile memory structure employing high-k gate dielectric and metal gate |
Nicolas L. Breil, Rishikesh Krishnan, Siddarth A. Krishnan, Unoh Kwon |
2016-04-19 |
|
| 9293461 |
Replacement metal gate structures for effective work function control |
Unoh Kwon, Ravikumar Ramachandran |
2016-03-22 |
$709,000 |
| 9257519 |
Semiconductor device including graded gate stack, related method and design structure |
Min Dai, Jinping Liu, Joseph F. Shepard, Jr., Keith Kwong Hon Wong |
2016-02-09 |
$571,000 |
| 9252232 |
Multi-plasma nitridation process for a gate dielectric |
Barry P. Linder, Shahab Siddiqui |
2016-02-02 |
$567,000 |
| 9236314 |
High-K/metal gate stack using capping layer methods, IC and related transistors |
Naim Moumen, Vijay Narayanan, Dae-Gyu Park, Vamsi K. Paruchuri |
2016-01-12 |
$510,000 |
| 9196700 |
Multi-plasma nitridation process for a gate dielectric |
Barry P. Linder, Shahab Siddiqui |
2015-11-24 |
$992,000 |
