Issued Patents All Time
Showing 26–50 of 131 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9196707 | Oxygen scavenging spacer for a gate electrode | Deleep R. Nair, Vijay Narayanan, Carl Radens, Jay M. Shah | 2015-11-24 |
| 9099461 | Method of manufacturing scaled equivalent oxide thickness gate stacks in semiconductor devices and related design structure | Min Dai, Jinping Liu, Paul A. Ronsheim, Joseph F. Shepard, Jr., Shahab Siddiqui | 2015-08-04 |
| 9099394 | Non-volatile memory structure employing high-k gate dielectric and metal gate | Nicolas L. Breil, Rishikesh Krishnan, Siddarth A. Krishnan, Unoh Kwon | 2015-08-04 |
| 9093495 | Method and structure to reduce FET threshold voltage shift due to oxygen diffusion | Christopher V. Baiocco, Deleep R. Nair, Jay M. Shah | 2015-07-28 |
| 9087927 | Thermally stable high-K tetragonal HFO2 layer within high aspect ratio deep trenches | Bachir Dirahoui, Rishikesh Krishnan, Siddarth A. Krishnan, Oh-Jung Kwon, Paul C. Parries +1 more | 2015-07-21 |
| 9087784 | Structure and method of Tinv scaling for high k metal gate technology | Dechao Guo, Siddarth A. Krishnan, Unoh Kwon, Carl Radens, Shahab Siddiqui | 2015-07-21 |
| 9087722 | Semiconductor devices having different gate oxide thicknesses | Charlotte DeWan Adams, Siddarth A. Krishnan, Unoh Kwon, Shahab Siddiqui | 2015-07-21 |
| 9059211 | Oxygen scavenging spacer for a gate electrode | Deleep R. Nair, Vijay Narayanan, Carl Radens, Jay M. Shah | 2015-06-16 |
| 9059313 | Replacement gate having work function at valence band edge | Keith Kwong Hon Wong, Unoh Kwon | 2015-06-16 |
| 9059315 | Concurrently forming nFET and pFET gate dielectric layers | Takashi Ando, MaryJane Brodsky, Min Dai, Siddarth A. Krishnan, Joseph F. Shepard, Jr. +2 more | 2015-06-16 |
| 9040369 | Structure and method for replacement gate MOSFET with self-aligned contact using sacrificial mandrel dielectric | Shahab Siddiqui, Carl Radens | 2015-05-26 |
| 9029959 | Composite high-k gate dielectric stack for reducing gate leakage | MaryJane Brodsky, Min Dai, Joseph F. Shepard, Jr., Shahab Siddiqui, Yanfeng Wang +1 more | 2015-05-12 |
| 9006837 | Structure and method of Tinv scaling for high k metal gate technology | Dechao Guo, Siddarth A. Krishnan, Unoh Kwon, Carl Radens, Shahab Siddiqui | 2015-04-14 |
| 9006064 | Multi-plasma nitridation process for a gate dielectric | Barry P. Linder, Shahab Siddiqui | 2015-04-14 |
| 8952460 | Germanium oxide free atomic layer deposition of silicon oxide and high-k gate dielectric on germanium containing channel for CMOS devices | MaryJane Brodsky, Murshed Chowdhury, Min Dai, Siddarth A. Krishnan, Shreesh Narasimha +1 more | 2015-02-10 |
| 8941177 | Semiconductor devices having different gate oxide thicknesses | Charlotte DeWan Adams, Siddarth A. Krishnan, Unoh Kwon, Shahab Siddiqui | 2015-01-27 |
| 8916435 | Self-aligned bottom plate for metal high-K dielectric metal insulator metal (MIM) embedded dynamic random access memory | Zhengwen Li, Damon B. Farmer, Keith Kwong Hon Wong, Jian-Shen Yu, Zhen Zhang +1 more | 2014-12-23 |
| 8901706 | Thermally stable high-K tetragonal HFO2 layer within high aspect ratio deep trenches | Bachir Dirahoui, Rishikesh Krishnan, Siddarth A. Krishnan, Oh-Jung Kwon, Paul C. Parries +1 more | 2014-12-02 |
| 8835292 | Method of manufacturing semiconductor devices including replacement metal gate process incorporating a conductive dummy gate layer | Min Dai, Xiang Hu, Jinping Liu, Yanxiang Liu, Xiaodong Yang | 2014-09-16 |
| 8836048 | Field effect transistor device having a hybrid metal gate stack | Cyril Cabral, Jr., Josephine B. Chang, Martin M. Frank, Michael A. Guillorn, Christian Lavoie +2 more | 2014-09-16 |
| 8809176 | Replacement gate with reduced gate leakage current | Takashi Ando, Rishikesh Krishnan, Siddarth A. Krishnan, Unoh Kwon, Keith Kwong Hon Wong | 2014-08-19 |
| 8809152 | Germanium oxide free atomic layer deposition of silicon oxide and high-k gate dielectric on germanium containing channel for CMOS devices | MaryJane Brodsky, Murshed Chowdhury, Min Dai, Siddarth A. Krishnan, Shreesh Narasimha +1 more | 2014-08-19 |
| 8778750 | Techniques for the fabrication of thick gate dielectric | Eduard A. Cartier, Andreas Kerber, Siddarth A. Krishnan, Naim Moumen | 2014-07-15 |
| 8759172 | Etch stop layer formation in metal gate process | Zhengwen Li, Ramachandra Divakaruni, Siddarth A. Krishnan, Unoh Kwon, Richard S. Wise | 2014-06-24 |
| 8753936 | Changing effective work function using ion implantation during dual work function metal gate integration | Martin M. Frank, Herbert L. Ho, Mark J. Hurley, Rashmi Jha, Naim Moumen +3 more | 2014-06-17 |