Issued Patents All Time
Showing 25 most recent of 57 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9484269 | Structure and method to control bottom corner threshold in an SOI device | Joseph Ervin, Jeffrey B. Johnson, Kevin McStay, Chengwen Pei, Geng Wang +1 more | 2016-11-01 |
| 9311443 | Correcting for stress induced pattern shifts in semiconductor manufacturing | Dureseti Chidambarrao, James A. Culp, Ian P. Stobert | 2016-04-12 |
| 9240482 | Asymmetric stressor DRAM | Ravi K. Dasaka, Shreesh Narasimha, Ahmed Nayaz Noemaun, Karen A. Nummy, Katsunori Onishi +3 more | 2016-01-19 |
| 9136321 | Low energy ion implantation of a junction butting region | Shreesh Narasimha, Katsunori Onishi, Chengwen Pei, Geng Wang | 2015-09-15 |
| 9087927 | Thermally stable high-K tetragonal HFO2 layer within high aspect ratio deep trenches | Michael P. Chudzik, Bachir Dirahoui, Rishikesh Krishnan, Siddarth A. Krishnan, Oh-Jung Kwon +1 more | 2015-07-21 |
| 8963283 | Method of fabricating isolated capacitors and structure thereof | Oh-Jung Kwon, Junedong Lee, Dominic J. Schepis | 2015-02-24 |
| 8940617 | Method of fabricating isolated capacitors and structure thereof | Oh-Jung Kwon, Junedong Lee, Dominic J. Schepis | 2015-01-27 |
| 8901706 | Thermally stable high-K tetragonal HFO2 layer within high aspect ratio deep trenches | Michael P. Chudzik, Bachir Dirahoui, Rishikesh Krishnan, Siddarth A. Krishnan, Oh-Jung Kwon +1 more | 2014-12-02 |
| 8835994 | Reduced corner leakage in SOI structure and method | Joseph Ervin, Jeffrey B. Johnson, Chengwen Pei, Geng Wang, Yanli Zhang | 2014-09-16 |
| 8809953 | FET structures with trench implantation to improve back channel leakage and body resistance | David M. Fried, Jeffrey B. Johnson, Kevin McStay, Chengwen Pei, Gan Wang +2 more | 2014-08-19 |
| 8741780 | Reduced corner leakage in SOI structure and method | Joseph Ervin, Jeffrey B. Johnson, Chengwen Pei, Geng Wang, Yanli Zhang | 2014-06-03 |
| 8723243 | Polysilicon/metal contact resistance in deep trench | Brian W. Messenger, Chengwen Pei, Geng Wang, Yanli Zhang | 2014-05-13 |
| 8716776 | Method of fabricating isolated capacitors and structure thereof | Oh-Jung Kwon, Junedong Lee, Dominic J. Schepis | 2014-05-06 |
| 8652933 | Semiconductor structure having wide and narrow deep trenches with different materials | Yanli Zhang | 2014-02-18 |
| 8652925 | Method of fabricating isolated capacitors and structure thereof | Oh-Jung Kwon, Junedong Lee, Dominic J. Schepis | 2014-02-18 |
| 8642423 | Polysilicon/metal contact resistance in deep trench | Brian W. Messenger, Chengwen Pei, Geng Wang, Yanli Zhang | 2014-02-04 |
| 8637958 | Structure and method for forming isolation and buried plate for trench capacitor | Abhishek Dube, Subramanian S. Iyer, Babar A. Khan, Oh-Jung Kwon, Junedong Lee +4 more | 2014-01-28 |
| 8536649 | Method to reduce threshold voltage variability with through gate well implant | Geng Wang, Joseph Ervin, Jeffrey B. Johnson | 2013-09-17 |
| 8395217 | Isolation in CMOSFET devices utilizing buried air bags | Kangguo Cheng, Joseph Ervin, Jeffrey B. Johnson, Pranita Kulkarni, Kevin McStay +3 more | 2013-03-12 |
| 8298908 | Structure and method for forming isolation and buried plate for trench capacitor | Abhishek Dube, Subramanian S. Iyer, Babar A. Khan, Oh-Jung Kwon, Junedong Lee +4 more | 2012-10-30 |
| 8298884 | Method to reduce threshold voltage variability with through gate well implant | Geng Wang, Joseph Ervin, Jeffrey B. Johnson | 2012-10-30 |
| 8273629 | Through-gate implant for body dopant | Geng Wang | 2012-09-25 |
| 8236632 | FET structures with trench implantation to improve back channel leakage and body resistance | David M. Fried, Jeffrey B. Johnson, Kevin McStay, Chengwen Pei, Gan Wang +2 more | 2012-08-07 |
| 8198169 | Deep trench capacitor in a SOI substrate having a laterally protruding buried strap | MaryJane Brodsky, Kangguo Cheng, Herbert L. Ho, Kevin R. Winstel | 2012-06-12 |
| 7923815 | DRAM having deep trench capacitors with lightly doped buried plates | Geng Wang, Kangguo Cheng, Johnathan E. Faltermeier | 2011-04-12 |