Issued Patents All Time
Showing 25 most recent of 61 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11158368 | Static random-access memory cell design | Benjamin Vincent | 2021-10-26 |
| 10818668 | Metal trench capacitor and improved isolation and methods of manufacture | Roger A. Booth, Jr., Kangguo Cheng, Chengwen Pei, Ravi M. Todi, Geng Wang | 2020-10-27 |
| 10403772 | Electrical and optical via connections on a same chip | Juntao Li, Kangguo Cheng, Chengwen Pei, Geng Wang | 2019-09-03 |
| 10079280 | Asymmetric FET | Kangguo Cheng, Juntao Li, Chengwen Pei, Geng Wang | 2018-09-18 |
| 9929290 | Electrical and optical via connections on a same chip | Juntao Li, Kangguo Cheng, Chengwen Pei, Geng Wang | 2018-03-27 |
| 9899391 | Metal trench capacitor and improved isolation and methods of manufacture | Roger A. Booth, Jr., Kangguo Cheng, Chengwen Pei, Ravi M. Todi, Geng Wang | 2018-02-20 |
| 9859373 | Asymmetric FET | Kangguo Cheng, Juntao Li, Chengwen Pei, Geng Wang | 2018-01-02 |
| 9583497 | Metal trench capacitor and improved isolation and methods of manufacture | Roger A. Booth, Jr., Kangguo Cheng, Chengwen Pei, Ravi M. Todi, Geng Wang | 2017-02-28 |
| 9557290 | Nanochannel electrode devices | Kangguo Cheng, Juntao Li, Chengwen Pei, Geng Wang | 2017-01-31 |
| 9530701 | Method of forming semiconductor fins on SOI substrate | Kangguo Cheng, Juntao Li, Chengwen Pei, Geng Wang | 2016-12-27 |
| 9490223 | Structure to prevent deep trench moat charging and moat isolation fails | Kangguo Cheng, Juntao Li, Chengwen Pei, Geng Wang | 2016-11-08 |
| 9484269 | Structure and method to control bottom corner threshold in an SOI device | Jeffrey B. Johnson, Kevin McStay, Paul C. Parries, Chengwen Pei, Geng Wang +1 more | 2016-11-01 |
| 9478600 | Method of forming substrate contact for semiconductor on insulator (SOI) substrate | Geng Wang, Roger A. Booth, Jr., Kangguo Cheng, Chengwen Pei, Ravi M. Todi | 2016-10-25 |
| 9461042 | Sublithographic width finFET employing solid phase epitaxy | Kangguo Cheng, Juntao Li, Chengwen Pei, Ravi M. Todi, Geng Wang | 2016-10-04 |
| 9397152 | Multilayer MIM capacitor | Kangguo Cheng, Chengwen Pei, Ravi M. Todi, Geng Wang | 2016-07-19 |
| 9391204 | Asymmetric FET | Kangguo Cheng, Juntao Li, Chengwen Pei, Geng Wang | 2016-07-12 |
| 9379177 | Deep trench capacitor | Kangguo Cheng, Chengwen Pei, Ravi M. Todi, Geng Wang | 2016-06-28 |
| 9343320 | Pattern factor dependency alleviation for eDRAM and logic devices with disposable fill to ease deep trench integration with fins | Kangguo Cheng, Juntao Li, Chengwen Pei, Geng Wang | 2016-05-17 |
| 9293520 | Method of forming substrate contact for semiconductor on insulator (SOI) substrate | Geng Wang, Roger A. Booth, Jr., Kangguo Cheng, Chengwen Pei, Ravi M. Todi | 2016-03-22 |
| 9287272 | Metal trench capacitor and improved isolation and methods of manufacture | Roger A. Booth, Jr., Kangguo Cheng, Chengwen Pei, Ravi M. Todi, Geng Wang | 2016-03-15 |
| 9228994 | Nanochannel electrode devices | Kangguo Cheng, Juntao Li, Chengwen Pei, Geng Wang | 2016-01-05 |
| 9224801 | Multilayer MIM capacitor | Kangguo Cheng, Chengwen Pei, Ravi M. Todi, Geng Wang | 2015-12-29 |
| 9159578 | Self-aligned devices and methods of manufacture | Roger A. Booth, Jr., Kangguo Cheng, Chengwen Pei, Ravi M. Todi, Geng Wang | 2015-10-13 |
| 9087928 | High density memory cells using lateral epitaxy | Roger A. Booth, Jr., Kangguo Cheng, David M. Fried, Byeong Y. Kim, Chengwen Pei +2 more | 2015-07-21 |
| 9064745 | Sublithographic width finFET employing solid phase epitaxy | Chengwen Pei, Kangguo Cheng, Juntao Li, Ravi M. Todi, Geng Wang | 2015-06-23 |