| 12336206 |
Heterojunction bipolar transistors with a cut stress liner |
Vibhor Jain, Viorel Ontalus, John J. Pekarik |
2025-06-17 |
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| 12295161 |
Trench isolation having three portions with different materials, and LDMOS FET including same |
Rong-Ting Liou, Man Gu, Wang Zheng, Jagar Singh, Haiting Wang |
2025-05-06 |
|
| 12191351 |
Laterally-diffused metal-oxide-semiconductor devices with an air gap |
Bong Woong Mun |
2025-01-07 |
|
| 12007269 |
Weight measuring shovel |
— |
2024-06-11 |
|
| 11894450 |
Lateral bipolar transistor with emitter and collector regions including portions within In-insulator layer cavities and method |
Shesh Mani Pandey |
2024-02-06 |
$79,208,000 |
| 11749747 |
Bipolar transistor structure with collector on polycrystalline isolation layer and methods to form same |
Judson R. Holt, Vibhor Jain, John J. Pekarik |
2023-09-05 |
$32,194,000 |
| 11721722 |
Bipolar junction transistors including a stress liner |
Man Gu, Jagar Singh, Haiting Wang |
2023-08-08 |
$37,165,000 |
| 11396791 |
Equalizing cartridge for a flapper valve |
— |
2022-07-26 |
$30,517,000 |
| 11387353 |
Structure providing charge controlled electronic fuse |
Jagar Singh, Sudarshan Narayanan, Alvin J. Joseph, William J. Taylor, Jr. |
2022-07-12 |
$106,533,000 |
| 10626703 |
Safety valve coupling and method of manufacturing valve |
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2020-04-21 |
$15,294,000 |
| 10482200 |
Modeling random dopant fluctuations in semiconductor devices |
Samarth Agarwal, Abhisek Dixit |
2019-11-19 |
$41,143,000 |
| 10325913 |
Method, apparatus, and system having super steep retrograde well with engineered dopant profiles |
David Paul Brunco |
2019-06-18 |
$31,887,000 |
| 10269707 |
Semiconductor structures with field effect transistor(s) having low-resistance source/drain contact(s) |
Brent A. Anderson, Edward J. Nowak |
2019-04-23 |
$44,921,000 |
| 10056408 |
Structure and method to form a FinFET device |
Andres Bryant, Effendi Leobandung, Tenko Yamashita |
2018-08-21 |
$9,392,000 |
| 9911740 |
Method, apparatus, and system having super steep retrograde well with engineered dopant profiles |
David Paul Brunco |
2018-03-06 |
$9,001,000 |
| 9786751 |
Semiconductor structures with field effect transistor(s) having low-resistance source/drain contact(s) |
Brent A. Anderson, Edward J. Nowak |
2017-10-10 |
$14,921,000 |
| 9525069 |
Structure and method to form a FinFET device |
Andres Bryant, Effendi Leobandung, Tenko Yamashita |
2016-12-20 |
$17,295,000 |
| 9496394 |
Semiconductor structures with field effect transistor(s) having low-resistance source/drain contact(s) |
Brent A. Anderson, Edward J. Nowak |
2016-11-15 |
$8,353,000 |
| 9484269 |
Structure and method to control bottom corner threshold in an SOI device |
Joseph Ervin, Kevin McStay, Paul C. Parries, Chengwen Pei, Geng Wang +1 more |
2016-11-01 |
$4,589,000 |
| 9312274 |
Merged fin structures for finFET devices |
Andres Bryant, Brian J. Greene, Mickey H. Yu |
2016-04-12 |
$1,143,000 |
| 9196712 |
FinFET extension regions |
Mohammad Hasanuzzaman, Kam-Leung Lee |
2015-11-24 |
$992,000 |
| 9105718 |
Butted SOI junction isolation structures and devices and method of fabrication |
Shreesh Narasimha, Hasan M. Nayfeh, Viorel Ontalus, Robert R. Robison |
2015-08-11 |
$2,160,000 |
| 9105742 |
Dual epitaxial process including spacer adjustment |
Veeraraghavan S. Basker, Tenko Yamashita, Chun-Chen Yeh |
2015-08-11 |
$2,160,000 |
| 9059281 |
Dual L-shaped drift regions in an LDMOS device and method of making the same |
David G. Brochu, JR., John J. Ellis-Monaghan, Michael J. Hauser, Xuefeng Liu |
2015-06-16 |
$2,098,000 |
| 9059138 |
Heterojunction bipolar transistor with reduced sub-collector length, method of manufacture and design structure |
Renata Camillo-Castillo, Zhong-Xiang He, Qizhi Liu, Xuefeng Liu |
2015-06-16 |
$2,098,000 |
