Issued Patents All Time
Showing 1–16 of 16 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12408373 | Device with three dimensional channel | Khon Cho | 2025-09-02 |
| 12336220 | Extended-drain metal-oxide-semiconductor devices with a gap between the drain and body wells | Upinder Singh, Jeoung Mo Koo, Huihua Jiang | 2025-06-17 |
| 12289913 | Device with metal field plate extension | Khon Cho | 2025-04-29 |
| 12191351 | Laterally-diffused metal-oxide-semiconductor devices with an air gap | Jeffrey B. Johnson | 2025-01-07 |
| 11996441 | Semiconductor device for high voltage applications | Kun Liu | 2024-05-28 |
| 11955514 | Field-effect transistors with a gate structure in a dual-depth trench isolation structure | Jeoung Mo Koo | 2024-04-09 |
| 11862693 | Semiconductor devices including a drain captive structure having an air gap and methods of forming the same | Jeoung Mo Koo | 2024-01-02 |
| 11791392 | Extended-drain metal-oxide-semiconductor devices with a notched gate electrode | Upinder Singh, Jeoung Mo Koo | 2023-10-17 |
| 11791379 | Galvanic isolation using isolation break between redistribution layer electrodes | Wanbing Yi, Juan Boon Tan, Jeoung Mo Koo | 2023-10-17 |
| 11764273 | Semiconductor structures for galvanic isolation | Jeoung Mo Koo | 2023-09-19 |
| 11658240 | Semiconductor transistors on multi-layered substrates | — | 2023-05-23 |
| 11538910 | Field-effect transistors of semiconductor devices | — | 2022-12-27 |
| 11502193 | Extended-drain metal-oxide-semiconductor devices with a multiple-thickness buffer dielectric layer | Upinder Singh, Jeoung Mo Koo | 2022-11-15 |
| 11469169 | High voltage decoupling capacitor and integration methods | Jeoung Mo Koo | 2022-10-11 |
| 11456306 | Nonvolatile memory device with a metal-insulator-metal (MIM) capacitor in a substrate and integration schemes | Jeoung Mo Koo | 2022-09-27 |
| 11257949 | Transistor devices and methods of forming transistor devices | Jeoung Mo Koo | 2022-02-22 |