Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Laterally-diffused metal-oxide-semiconductor devices with an air gap

Laterally-diffused metal-oxide-semiconductor devices with an air gap

US Patent 12191351 · Granted Jan 7, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Device with three dimensional channel2025
Heterojunction bipolar transistors with a cut stress liner2025
Extended-drain metal-oxide-semiconductor devices with a gap between the drain an2025
Trench isolation having three portions with different materials, and LDMOS FET i2025
Device with metal field plate extension2025
Weight measuring shovel2024
Semiconductor device for high voltage applications2024
Field-effect transistors with a gate structure in a dual-depth trench isolation 2024
Lateral bipolar transistor with emitter and collector regions including portions2024
Semiconductor devices including a drain captive structure having an air gap and 2024
Galvanic isolation using isolation break between redistribution layer electrodes2023
Extended-drain metal-oxide-semiconductor devices with a notched gate electrode2023