AB

Andres Bryant

IBM: 170 patents #226 of 70,183Top 1%
Globalfoundries: 14 patents #253 of 4,424Top 6%
RE Renesas Electronics: 1 patents #2,739 of 4,529Top 65%
TC Toshiba America Electronic Components: 1 patents #23 of 77Top 30%
Overall (All Time): #4,058 of 4,157,543Top 1%
184
Patents All Time

Issued Patents All Time

Showing 25 most recent of 184 patents

Patent #TitleCo-InventorsDate
10714616 FINFET having a gate structure in a trench feature in a bent fin Brent A. Anderson, Edward J. Nowak 2020-07-14
10056408 Structure and method to form a FinFET device Jeffrey B. Johnson, Effendi Leobandung, Tenko Yamashita 2018-08-21
9805990 FDSOI voltage reference Edward J. Nowak, Robert R. Robison 2017-10-31
9768304 Method of fabricating a FINFET having a gate structure disposed at least partially at a bend region of the semiconductor fin Brent A. Anderson, Edward J. Nowak 2017-09-19
9673055 Method for quadruple frequency FinFETs with single-fin removal Brent A. Anderson, Edward J. Nowak 2017-06-06
9548379 Asymmetric multi-gate FinFET Veeraraghavan S. Basker, Huiming Bu, Sivananda K. Kanakasabapathy, Tenko Yamashita 2017-01-17
9548306 Method of forming a complementary metal oxide semiconductor structure with N-type and P-type field effect transistors having symmetric source/drain junctions and optional dual silicides Veeraraghavan S. Basker, Tenko Yamashita 2017-01-17
9543435 Asymmetric multi-gate finFET Veeraraghavan S. Basker, Huiming Bu, Sivananda K. Kanakasabapathy, Tenko Yamashita 2017-01-10
9525069 Structure and method to form a FinFET device Jeffrey B. Johnson, Effendi Leobandung, Tenko Yamashita 2016-12-20
9478615 Blanket short channel roll-up implant with non-angled long channel compensating implant through patterned opening James W. Adkisson, Brent A. Anderson, Edward J. Nowak 2016-10-25
9437595 Barrier trench structure and methods of manufacture Brent A. Anderson, Edward J. Nowak, Jed H. Rankin 2016-09-06
9390981 Method of forming a complementary metal oxide semiconductor structure with N-type and P-type field effect transistors having symmetric source/drain junctions and optional dual silicides Veeraraghavan S. Basker, Tenko Yamashita 2016-07-12
9368410 Semiconductor devices having tensile and/or compressive stress and methods of manufacturing Brent A. Anderson, Edward J. Nowak, Edmund J. Sprogis 2016-06-14
9349852 Method, structure and design structure for customizing history effects of SOI circuits Brent A. Anderson, Edward J. Nowak 2016-05-24
9312274 Merged fin structures for finFET devices Brian J. Greene, Jeffrey B. Johnson, Mickey H. Yu 2016-04-12
9272233 Nano-filter and method of forming same, and method of filtration Brent A. Anderson, Edward J. Nowak, Jeffrey W. Sleight 2016-03-01
9240352 Bulk finFET well contacts with fin pattern uniformity Brent A. Anderson, Edward J. Nowak, Scott R. Stiffler 2016-01-19
9153669 Low capacitance finFET gate structure Brent A. Anderson, Edward J. Nowak 2015-10-06
9105707 ZRAM heterochannel memory Lyndon R. Logan, Edward J. Nowak, Robert R. Robison 2015-08-11
9064974 Barrier trench structure and methods of manufacture Brent A. Anderson, Edward J. Nowak, Jed H. Rankin 2015-06-23
8963211 Method, structure and design structure for customizing history effects of SOI circuits Brent A. Anderson, Edward J. Nowak 2015-02-24
8946027 Replacement-gate FinFET structure and process Brent A. Anderson, Edward J. Nowak 2015-02-03
8941180 Integrated circuit structure incorporating one or more asymmetric field effect transistors as power gates for an electronic circuit with stacked symmetric field effect transistors Brent A. Anderson, Edward J. Nowak 2015-01-27
8900954 Blanket short channel roll-up implant with non-angled long channel compensating implant through patterned opening James W. Adkisson, Brent A. Anderson, Edward J. Nowak 2014-12-02
8835191 Nanowire stress sensors and stress sensor integrated circuits, design structures for a stress sensor integrated circuit, and related methods Oki Gunawan, Shih-Hsien Lo, Jeffrey W. Sleight 2014-09-16