JS

Jeffrey W. Sleight

IBM: 271 patents #91 of 70,183Top 1%
Globalfoundries: 14 patents #253 of 4,424Top 6%
DE Digital Equipment: 2 patents #602 of 2,100Top 30%
AM AMD: 1 patents #5,683 of 9,279Top 65%
ET Elpis Technologies: 1 patents #31 of 121Top 30%
Overall (All Time): #1,437 of 4,157,543Top 1%
289
Patents All Time

Issued Patents All Time

Showing 25 most recent of 289 patents

Patent #TitleCo-InventorsDate
12166106 Graphene/nanostructure FET with self-aligned contact and gate Josephine B. Chang, Isaac Lauer 2024-12-10
12041856 Superconducting circuit provided on an encapsulated vacuum cavity Isaac Lauer, Karthik Balakrishnan, David J. Frank 2024-07-16
11678591 Vacuum encapsulated Josephson junction Isaac Lauer, Karthik Balakrishnan, David J. Frank 2023-06-13
11538977 Qubits with ion implant Josephson junctions Ryan T. Gordon, Kenneth P. Rodbell, Robert L. Sandstrom 2022-12-27
10699955 Techniques for creating a local interconnect using a SOI wafer Josephine B. Chang, Michael A. Guillorn, Isaac Lauer 2020-06-30
10580894 Strained semiconductor nanowire Josephine B. Chang, Isaac Lauer, Chung-Hsun Lin 2020-03-03
10366892 Hybrid III-V technology to support multiple supply voltages and off state currents on same chip Josephine B. Chang, Isaac Lauer, Amlan Majumdar 2019-07-30
10361219 Implementing a hybrid finFET device and nanowire device utilizing selective SGOI Josephine B. Chang, Leland Chang, Isaac Lauer 2019-07-23
10354960 Support for long channel length nanowire transistors Karthik Balakrishnan, Isaac Lauer, Tenko Yamashita 2019-07-16
10170679 Josephson junction with spacer Josephine B. Chang, Michael A. Guillorn, Ryan M. Martin 2019-01-01
10170634 Wire-last gate-all-around nanowire FET Josephine B. Chang, Michael A. Guillorn, Isaac Lauer 2019-01-01
10056293 Techniques for creating a local interconnect using a SOI wafer Josephine B. Chang, Michael A. Guillorn, Isaac Lauer 2018-08-21
10056487 Strained semiconductor nanowire Josephine B. Chang, Isaac Lauer, Chung-Hsun Lin 2018-08-21
9997472 Support for long channel length nanowire transistors Karthik Balakrishnan, Isaac Lauer, Tenko Yamashita 2018-06-12
9960233 Expitaxially regrown heterostructure nanowire lateral tunnel field effect transistor Siddarth A. Krishnan, Unoh Kwon, Vijay Narayanan 2018-05-01
9954063 Stacked planar double-gate lamellar field-effect transistor Josephine B. Chang, Michael A. Guillorn, Gen P. Lauer, Isaac Lauer 2018-04-24
9954062 Stacked planar double-gate lamellar field-effect transistor Josephine B. Chang, Michael A. Guillorn, Gen P. Lauer, Isaac Lauer 2018-04-24
9929334 Josephson junction with spacer Josephine B. Chang, Michael A. Guillorn, Ryan M. Martin 2018-03-27
9922942 Support for long channel length nanowire transistors Karthik Balakrishnan, Isaac Lauer, Tenko Yamashita 2018-03-20
9922830 Hybrid III-V technology to support multiple supply voltages and off state currents on same chip Josephine B. Chang, Isaac Lauer, Amlan Majumdar 2018-03-20
9917057 Mixed lithography approach for E-beam and optical exposure using HSQ Josephine B. Chang, Szu-Lin Cheng, Isaac Lauer 2018-03-13
9859430 Local germanium condensation for suspended nanowire and finFET devices Josephine B. Chang, Leland Chang, Isaac Lauer 2018-01-02
9859375 Stacked planar double-gate lamellar field-effect transistor Josephine B. Chang, Michael A. Guillorn, Gen P. Lauer, Isaac Lauer 2018-01-02
9812370 III-V, SiGe, or Ge base lateral bipolar transistor and CMOS hybrid technology Josephine B. Chang, Gen P. Lauer, Isaac Lauer 2017-11-07
9754965 Techniques for dual dielectric thickness for a nanowire CMOS technology using oxygen growth Josephine B. Chang, Michael A. Guillorn, Isaac Lauer 2017-09-05