Issued Patents All Time
Showing 25 most recent of 48 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11011698 | Enhanced coercivity in MTJ devices by contact depth control | Anthony J. Annunziata, Nathan P. Marchack | 2021-05-18 |
| 10497862 | Enhanced coercivity in MTJ devices by contact depth control | Anthony J. Annunziata, Nathan P. Marchack | 2019-12-03 |
| 10388857 | Spin torque MRAM fabrication using negative tone lithography and ion beam etching | Anthony J. Annunziata, Armand A. Galan, Steve Holmes, Eric A. Joseph, Qinghuang Lin +1 more | 2019-08-20 |
| 10256397 | Structure and method to reduce shorting and process degradation in stt-MRAM devices | Anthony J. Annunziata, Janusz J. Nowak, Eugene J. O'Sullivan | 2019-04-09 |
| 10243138 | Structure and method to reduce shorting and process degradation in STT-MRAM devices | Anthony J. Annunziata, Janusz J. Nowak, Eugene J. O'Sullivan | 2019-03-26 |
| 10170698 | Spin torque MRAM fabrication using negative tone lithography and ion beam etching | Anthony J. Annunziata, Armand A. Galan, Steve Holmes, Eric A. Joseph, Qinghuang Lin +1 more | 2019-01-01 |
| 10170609 | Internal spacer formation from selective oxidation for Fin-first wire-last replacement gate-all-around nanowire FET | Szu-Lin Cheng, Michael A. Guillorn, Isaac Lauer | 2019-01-01 |
| 10170608 | Internal spacer formation from selective oxidation for fin-first wire-last replacement gate-all-around nanowire FET | Szu-Lin Cheng, Michael A. Guillorn, Isaac Lauer | 2019-01-01 |
| 10084127 | Enhanced coercivity in MTJ devices by contact depth control | Anthony J. Annunziata, Nathan P. Marchack | 2018-09-25 |
| 9960347 | Structure and method to reduce shorting and process degradation in STT-MRAM devices | Anthony J. Annunziata, Janusz J. Nowak, Eugene J. O'Sullivan | 2018-05-01 |
| 9954063 | Stacked planar double-gate lamellar field-effect transistor | Josephine B. Chang, Michael A. Guillorn, Isaac Lauer, Jeffrey W. Sleight | 2018-04-24 |
| 9954062 | Stacked planar double-gate lamellar field-effect transistor | Josephine B. Chang, Michael A. Guillorn, Isaac Lauer, Jeffrey W. Sleight | 2018-04-24 |
| 9947863 | Structure and method to reduce shorting in STT-MRAM device | Anthony J. Annunziata, Nathan P. Marchack | 2018-04-17 |
| 9859375 | Stacked planar double-gate lamellar field-effect transistor | Josephine B. Chang, Michael A. Guillorn, Isaac Lauer, Jeffrey W. Sleight | 2018-01-02 |
| 9853210 | Reduced process degradation of spin torque magnetoresistive random access memory | Anthony J. Annunziata, Nathan P. Marchack, Stephen M. Rossnagel | 2017-12-26 |
| 9812370 | III-V, SiGe, or Ge base lateral bipolar transistor and CMOS hybrid technology | Josephine B. Chang, Isaac Lauer, Jeffrey W. Sleight | 2017-11-07 |
| 9748310 | Structure and method to reduce shorting in STT-MRAM device | Anthony J. Annunziata, Nathan P. Marchack | 2017-08-29 |
| 9705071 | Structure and method to reduce shorting and process degradation in STT-MRAM devices | Anthony J. Annunziata, Janusz J. Nowak, Eugene J. O'Sullivan | 2017-07-11 |
| 9705077 | Spin torque MRAM fabrication using negative tone lithography and ion beam etching | Anthony J. Annunziata, Armand A. Galan, Steve Holmes, Eric A. Joseph, Qinghuang Lin +1 more | 2017-07-11 |
| 9691972 | Low temperature encapsulation for magnetic tunnel junction | Anthony J. Annunziata, Sebastian U. Engelmann, Eric A. Joseph, Nathan P. Marchack, Deborah A. Neumayer +1 more | 2017-06-27 |
| 9673386 | Structure and method to reduce shorting in STT-MRAM device | Anthony J. Annunziata, Nathan P. Marchack | 2017-06-06 |
| 9660179 | Enhanced coercivity in MTJ devices by contact depth control | Anthony J. Annunziata, Nathan P. Marchack | 2017-05-23 |
| 9653679 | Magnetoresistive structures with stressed layer | Anthony J. Annunziata, Chandrasekharan Kothandaraman, Adam M. Pyzyna | 2017-05-16 |
| 9601686 | Magnetoresistive structures with stressed layer | Anthony J. Annunziata, Chandrasekharan Kothandaraman, Adam M. Pyzyna | 2017-03-21 |
| 9543388 | Complementary metal-oxide silicon having silicon and silicon germanium channels | Isaac Lauer, Alexander Reznicek, Jeffrey W. Sleight | 2017-01-10 |