Issued Patents All Time
Showing 1–25 of 94 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11031301 | Gate formation scheme for n-type and p-type transistors having separately tuned threshold voltages | Ruqiang Bao, Vijay Narayanan | 2021-06-08 |
| 10985075 | Gate formation scheme for n-type and p-type transistors having separately tuned threshold voltages | Ruqiang Bao, Vijay Narayanan | 2021-04-20 |
| 10756194 | Shared metal gate stack with tunable work function | Ruqiang Bao, Siddarth A. Krishnan, Vijay Narayanan | 2020-08-25 |
| 10395993 | Methods and structure to form high K metal gate stack with single work-function metal | Takashi Ando, Balaji Kannan, Siddarth A. Krishnan, Shahab Siddiqui | 2019-08-27 |
| 10361132 | Structures with thinned dielectric material | Ruqiang Bao, Takashi Ando, Aritra Dasgupta, Kai Zhao, Siddarth A. Krishnan | 2019-07-23 |
| 10354999 | Structure and method to suppress work function effect by patterning boundary proximity in replacement metal gate | Ruqiang Bao, Kai Zhao | 2019-07-16 |
| 10312157 | Field effect transistor stack with tunable work function | Ruqiang Bao, Siddarth A. Krishnan, Vijay Narayanan | 2019-06-04 |
| 10249543 | Field effect transistor stack with tunable work function | Ruqiang Bao, Siddarth A. Krishnan, Vijay Narayanan | 2019-04-02 |
| 10243055 | Shared metal gate stack with tunable work function | Ruqiang Bao, Siddarth A. Krishnan, Vijay Narayanan | 2019-03-26 |
| 10170373 | Methods for making robust replacement metal gates and multi-threshold devices in a soft mask integration scheme | Balaji Kannan, Rekha Rajaram | 2019-01-01 |
| 10079182 | Field effect transistor gate stack | Ruqiang Bao, Siddarth A. Krishnan, Vijay Narayanan | 2018-09-18 |
| 10062618 | Method and structure for formation of replacement metal gate field effect transistors | Takashi Ando, Aritra Dasgupta, Balaji Kannan | 2018-08-28 |
| 10002937 | Shared metal gate stack with tunable work function | Ruqiang Bao, Siddarth A. Krishnan, Vijay Narayanan | 2018-06-19 |
| 9997610 | Gate stack formed with interrupted deposition processes and laser annealing | Takashi Ando, Aritra Dasgupta, Oleg Gluschenkov, Balaji Kannan | 2018-06-12 |
| 9997361 | Gate stack formed with interrupted deposition processes and laser annealing | Takashi Ando, Aritra Dasgupta, Oleg Gluschenkov, Balaji Kannan | 2018-06-12 |
| 9960233 | Expitaxially regrown heterostructure nanowire lateral tunnel field effect transistor | Siddarth A. Krishnan, Vijay Narayanan, Jeffrey W. Sleight | 2018-05-01 |
| 9905476 | Alternative threshold voltage scheme via direct metal gate patterning for high performance CMOS FinFETs | Ruqiang Bao, Siddarth A. Krishnan, Keith Kwong Hon Wong | 2018-02-27 |
| 9859169 | Field effect transistor stack with tunable work function | Ruqiang Bao, Siddarth A. Krishnan, Vijay Narayanan | 2018-01-02 |
| 9824930 | Method of patterning dopant films in high-k dielectrics in a soft mask integration scheme | Takashi Ando, Hemanth Jagannathan, Balaji Kannan, Siddarth A. Krishnan, Rekha Rajaram | 2017-11-21 |
| 9818746 | Structure and method to suppress work function effect by patterning boundary proximity in replacement metal gate | Ruqiang Bao, Kai Zhao | 2017-11-14 |
| 9806161 | Integrated circuit structure having thin gate dielectric device and thick gate dielectric device | Shahrukh Khan, Shahab Siddiqui, Sean M. Polvino, Joseph F. Shepard, Jr. | 2017-10-31 |
| 9799656 | Semiconductor device having a gate stack with tunable work function | Ruqiang Bao, Siddarth A. Krishnan, Vijay Narayanan | 2017-10-24 |
| 9748145 | Semiconductor devices with varying threshold voltage and fabrication methods thereof | Balaji Kannan, Siddarth A. Krishnan, Takashi Ando, Vijay Narayanan | 2017-08-29 |
| 9721842 | Method of patterning dopant films in high-k dielectrics in a soft mask integration scheme | Takashi Ando, Hemanth Jagannathan, Balaji Kannan, Siddarth A. Krishnan, Rekha Rajaram | 2017-08-01 |
| 9691662 | Field effect transistors having multiple effective work functions | Takashi Ando, Min Dai, Balaji Kannan, Siddarth A. Krishnan | 2017-06-27 |