Issued Patents All Time
Showing 1–25 of 220 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11176569 | Manager special | — | 2021-11-16 |
| 11152300 | Electrical fuse with metal line migration | Baozhen Li, Yan Li, Chih-Chao Yang | 2021-10-19 |
| 11025989 | Live event video stream service | — | 2021-06-01 |
| 10699949 | Mechanically stable cobalt contacts | Wonwoo Kim, Praneet Adusumilli | 2020-06-30 |
| 10490501 | Method to form interconnect structure with tungsten fill | Jim Shih-Chun Liang | 2019-11-26 |
| 10347529 | Interconnect structures | Jim Shih-Chun Liang | 2019-07-09 |
| 10319633 | Diffusion barrier layer formation | Brett H. Engel, Domingo A. Ferrer, Arun Vijayakumar | 2019-06-11 |
| 10304735 | Mechanically stable cobalt contacts | Wonwoo Kim, Praneet Adusumilli | 2019-05-28 |
| 10192822 | Modified tungsten silicon | Domingo A. Ferrer, Kriteshwar K. Kohli, Siddarth A. Krishnan, Joseph F. Shepard, Jr. | 2019-01-29 |
| 10170359 | Diffusion barrier layer formation | Brett H. Engel, Domingo A. Ferrer, Arun Vijayakumar | 2019-01-01 |
| 10096609 | Modified tungsten silicon | Nicolas L. Breil, Domingo A. Ferrer | 2018-10-09 |
| 10090240 | Interconnect structure with capacitor element and related methods | Baozhen Li, Chih-Chao Yang | 2018-10-02 |
| 10020256 | Electronic fuse having an insulation layer | Chad M. Burke, Baozhen Li, Chih-Chao Yang | 2018-07-10 |
| 9997518 | Low resistive electrode for an extendable high-k metal gate stack | Ruqiang Bao | 2018-06-12 |
| 9960161 | Low resistive electrode for an extendable high-k metal gate stack | Ruqiang Bao | 2018-05-01 |
| 9953927 | Liner replacements for interconnect openings | Yun-Yu Wang, Daniel P. Stambaugh, Jeffrey C. Brown | 2018-04-24 |
| 9905476 | Alternative threshold voltage scheme via direct metal gate patterning for high performance CMOS FinFETs | Ruqiang Bao, Siddarth A. Krishnan, Unoh Kwon | 2018-02-27 |
| 9853116 | Partial sacrificial dummy gate with CMOS device with high-k metal gate | Dechao Guo, Wilfried E. Haensch, Shu-Jen Han, Daniel Jaeger, Yu Lu | 2017-12-26 |
| 9847251 | Diffusion barrier layer formation | Brett H. Engel, Domingo A. Ferrer, Arun Vijayakumar | 2017-12-19 |
| 9691655 | Etch stop in a dep-etch-dep process | Ruqiang Bao | 2017-06-27 |
| 9647169 | Light emitting diode (LED) using carbon materials | Dechao Guo, Shu-Jen Han, Jun Yuan | 2017-05-09 |
| 9553092 | Alternative threshold voltage scheme via direct metal gate patterning for high performance CMOS FinFETs | Ruqiang Bao, Siddarth A. Krishnan, Unoh Kwon | 2017-01-24 |
| 9548270 | Electrical fuse with metal line migration | Baozhen Li, Yan Li, Chih-Chao Yang | 2017-01-17 |
| 9505611 | Integration of electromechanical and CMOS devices in front-end-of-line using replacement metal gate process flow | Fei Liu, Qiqing C. Ouyang | 2016-11-29 |
| 9472640 | Self aligned embedded gate carbon transistors | Dechao Guo, Shu-Jen Han, Yu Lu | 2016-10-18 |