| 11176569 |
Manager special |
— |
2021-11-16 |
|
| 11152300 |
Electrical fuse with metal line migration |
Baozhen Li, Yan Li, Chih-Chao Yang |
2021-10-19 |
$2,168,000 |
| 11025989 |
Live event video stream service |
— |
2021-06-01 |
|
| 10699949 |
Mechanically stable cobalt contacts |
Wonwoo Kim, Praneet Adusumilli |
2020-06-30 |
$39,055,000 |
| 10490501 |
Method to form interconnect structure with tungsten fill |
Jim Shih-Chun Liang |
2019-11-26 |
$74,571,000 |
| 10347529 |
Interconnect structures |
Jim Shih-Chun Liang |
2019-07-09 |
$33,274,000 |
| 10319633 |
Diffusion barrier layer formation |
Brett H. Engel, Domingo A. Ferrer, Arun Vijayakumar |
2019-06-11 |
$1,829,000 |
| 10304735 |
Mechanically stable cobalt contacts |
Wonwoo Kim, Praneet Adusumilli |
2019-05-28 |
$30,095,000 |
| 10192822 |
Modified tungsten silicon |
Domingo A. Ferrer, Kriteshwar K. Kohli, Siddarth A. Krishnan, Joseph F. Shepard, Jr. |
2019-01-29 |
$16,870,000 |
| 10170359 |
Diffusion barrier layer formation |
Brett H. Engel, Domingo A. Ferrer, Arun Vijayakumar |
2019-01-01 |
|
| 10096609 |
Modified tungsten silicon |
Nicolas L. Breil, Domingo A. Ferrer |
2018-10-09 |
$19,488,000 |
| 10090240 |
Interconnect structure with capacitor element and related methods |
Baozhen Li, Chih-Chao Yang |
2018-10-02 |
$17,112,000 |
| 10020256 |
Electronic fuse having an insulation layer |
Chad M. Burke, Baozhen Li, Chih-Chao Yang |
2018-07-10 |
$11,440,000 |
| 9997518 |
Low resistive electrode for an extendable high-k metal gate stack |
Ruqiang Bao |
2018-06-12 |
$1,886,000 |
| 9960161 |
Low resistive electrode for an extendable high-k metal gate stack |
Ruqiang Bao |
2018-05-01 |
$4,480,000 |
| 9953927 |
Liner replacements for interconnect openings |
Yun-Yu Wang, Daniel P. Stambaugh, Jeffrey C. Brown |
2018-04-24 |
$8,335,000 |
| 9905476 |
Alternative threshold voltage scheme via direct metal gate patterning for high performance CMOS FinFETs |
Ruqiang Bao, Siddarth A. Krishnan, Unoh Kwon |
2018-02-27 |
$9,035,000 |
| 9853116 |
Partial sacrificial dummy gate with CMOS device with high-k metal gate |
Dechao Guo, Wilfried E. Haensch, Shu-Jen Han, Daniel Jaeger, Yu Lu |
2017-12-26 |
$2,704,000 |
| 9847251 |
Diffusion barrier layer formation |
Brett H. Engel, Domingo A. Ferrer, Arun Vijayakumar |
2017-12-19 |
$7,368,000 |
| 9691655 |
Etch stop in a dep-etch-dep process |
Ruqiang Bao |
2017-06-27 |
$2,603,000 |
| 9647169 |
Light emitting diode (LED) using carbon materials |
Dechao Guo, Shu-Jen Han, Jun Yuan |
2017-05-09 |
$2,584,000 |
| 9553092 |
Alternative threshold voltage scheme via direct metal gate patterning for high performance CMOS FinFETs |
Ruqiang Bao, Siddarth A. Krishnan, Unoh Kwon |
2017-01-24 |
$6,909,000 |
| 9548270 |
Electrical fuse with metal line migration |
Baozhen Li, Yan Li, Chih-Chao Yang |
2017-01-17 |
$4,498,000 |
| 9505611 |
Integration of electromechanical and CMOS devices in front-end-of-line using replacement metal gate process flow |
Fei Liu, Qiqing C. Ouyang |
2016-11-29 |
$4,439,000 |
| 9472640 |
Self aligned embedded gate carbon transistors |
Dechao Guo, Shu-Jen Han, Yu Lu |
2016-10-18 |
$3,531,000 |
