NB

Nicolas L. Breil

Globalfoundries: 17 patents #201 of 4,424Top 5%
IBM: 16 patents #6,952 of 70,183Top 10%
Applied Materials: 11 patents #1,198 of 7,310Top 20%
SS Stmicroelectronics (Crolles 2) Sas: 2 patents #204 of 529Top 40%
GU Globalfoundries U.S.: 2 patents #344 of 665Top 55%
SS Stmicroelectronics Sa: 1 patents #2,729 of 4,662Top 60%
📍 San Jose, CA: #1,156 of 32,062 inventorsTop 4%
🗺 California: #9,453 of 386,348 inventorsTop 3%
Overall (All Time): #64,373 of 4,157,543Top 2%
45
Patents All Time

Issued Patents All Time

Showing 1–25 of 45 patents

Patent #TitleCo-InventorsDate
12356705 Electrical contact cavity structure and methods of forming the same Lisa McGill, Manoj Vellaikal, Bocheng Cao, Pei Liu, Avgerinos V. Gelatos 2025-07-08
12327761 Void-free contact trench fill in gate-all-around FET architecture Byeong-Chan Lee, Benjamin Colombeau 2025-06-10
12284803 System and methods for dram contact formation Fredrick Fishburn, Byeong-Chan Lee 2025-04-22
12113020 Formation of metal vias on metal lines Ryan Smith, Kai Wu 2024-10-08
11978635 Silicide films through selective deposition Swaminathan Srinivasan, Abhijit Basu Mallick 2024-05-07
11605741 Methods of forming doped silicide power devices Joshua S. Holt, Lan Yu, Tyler Sherwood, Archana Kumar, Siddarth A. Krishnan 2023-03-14
11362275 Annealing processes for memory devices Siddarth A. Krishnan, Shashank Sharma, Ria Someshwar, Kai Ng, Deepak Kamalanathan 2022-06-14
11088280 Transistor and method of forming same Veeraraghavan S. Basker, Oleg Gluschenkov, Shogo Mochizuki, Alexander Reznicek 2021-08-10
11069809 Soi FinFET fins with recessed fins and epitaxy in source drain region Alexander Reznicek, Shogo Mochizuki, Veeraraghavan S. Basker, Oleg Gluschenkov 2021-07-20
10950450 Silicide films through selective deposition Swaminathan Srinivasan, Abhijit Basu Mallick 2021-03-16
10922809 Method for detecting voids and an inspection system Dror Shemesh, Vadim Kuchik 2021-02-16
10707167 Contacts to semiconductor substrate and methods of forming same Emre Alptekin, Christian Lavoie, Ahmet S. Ozcan, Kathryn T. Schonenberg 2020-07-07
10607841 Silicide films through selective deposition Swaminathan Srinivasan, Abhijit Basu Mallick 2020-03-31
10096609 Modified tungsten silicon Domingo A. Ferrer, Keith Kwong Hon Wong 2018-10-09
10068920 Silicon germanium fins on insulator formed by lateral recrystallization Alexander Reznicek, Veeraraghavan S. Basker, Shogo Mochizuki, Oleg Gluschenkov 2018-09-04
9997407 Voidless contact metal structures Veeraraghavan S. Basker, Oleg Gluschenkov, Shogo Mochizuki, Alexander Reznicek 2018-06-12
9911849 Transistor and method of forming same Veeraraghavan S. Basker, Oleg Gluschenkov, Shogo Mochizuki, Alexander Reznicek 2018-03-06
9905692 SOI FinFET fins with recessed fins and epitaxy in source drain region Alexander Reznicek, Shogo Mochizuki, Veeraraghavan S. Basker, Oleg Gluschenkov 2018-02-27
9865546 Contacts to semiconductor substrate and methods of forming same Emre Alptekin, Christian Lavoie, Ahmet S. Ozcan, Kathryn T. Schonenberg 2018-01-09
9859216 Voidless contact metal structures Veeraraghavan S. Basker, Oleg Gluschenkov, Shogo Mochizuki, Alexander Reznicek 2018-01-02
9859403 Multiple step thin film deposition method for high conformality Neal A. Makela, Praneet Adusumilli, Domingo A. Ferrer 2018-01-02
9653535 DT capacitor with silicide outer electrode and/or compressive stress layer, and related methods Ricardo A. Donaton, Dong-Hun Kang, Herbert L. Ho, Rishikesh Krishnan 2017-05-16
9595524 FinFET source-drain merged by silicide-based material Brent A. Anderson, Christian Lavoie 2017-03-14
9543167 FinFET source-drain merged by silicide-based material Brent A. Anderson, Christian Lavoie 2017-01-10
9496329 DT capacitor with silicide outer electrode and/or compressive stress layer, and related methods Ricardo A. Donaton, Dong-Hun Kang, Herbert L. Ho, Rishikesh Krishnan 2016-11-15