Issued Patents All Time
Showing 25 most recent of 83 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12408317 | SRAM macro design architecture | Saurabh Sinha, Shahzad Nazar, Xin Miao | 2025-09-02 |
| 12402293 | Stacked SRAM cell architecture | Saurabh Sinha, Xin Miao | 2025-08-26 |
| 12356712 | Device structure for inducing layout dependent threshold voltage shift | Xin Miao | 2025-07-08 |
| 12278232 | Leakage current reduction in electrical isolation gate structures | Thomas Hoffmann | 2025-04-15 |
| 12062703 | Self aligned replacement metal source/drain FINFET | Robert R. Robison, Reinaldo Vega | 2024-08-13 |
| 11469226 | Leakage current reduction in electrical isolation gate structures | Thomas Hoffmann | 2022-10-11 |
| 10943988 | Thermally stable salicide formation for salicide first contacts | Praneet Adusumilli, Christian Lavoie, Ahmet S. Ozcan | 2021-03-09 |
| 10937889 | Forming thermally stable salicide for salicide first contacts | Praneet Adusumilli, Christian Lavoie, Ahmet S. Ozcan | 2021-03-02 |
| 10818759 | Self aligned replacement metal source/drain finFET | Robert R. Robison, Reinaldo Vega | 2020-10-27 |
| 10707167 | Contacts to semiconductor substrate and methods of forming same | Nicolas L. Breil, Christian Lavoie, Ahmet S. Ozcan, Kathryn T. Schonenberg | 2020-07-07 |
| 10700065 | Leakage current reduction in electrical isolation gate structures | Thomas Hoffmann | 2020-06-30 |
| 10693005 | Reliable gate contacts over active areas | Albert M. Chu, Eric Eastman, Myung-Hee Na, Ravikumar Ramachandran | 2020-06-23 |
| 10546941 | Forming thermally stable salicide for salicide first contacts | Praneet Adusumilli, Christian Lavoie, Ahmet S. Ozcan | 2020-01-28 |
| 10453935 | Thermally stable salicide formation for salicide first contacts | Praneet Adusumilli, Christian Lavoie, Ahmet S. Ozcan | 2019-10-22 |
| 10418450 | Self aligned replacement metal source/drain finFET | Robert R. Robison, Reinaldo Vega | 2019-09-17 |
| 10381480 | Reliable gate contacts over active areas | Albert M. Chu, Eric Eastman, Myung-Hee Na, Ravikumar Ramachandran | 2019-08-13 |
| 10326000 | FinFET with reduced parasitic capacitance | Veeraraghavan S. Basker, Sivananda K. Kanakasabapathy | 2019-06-18 |
| 10236344 | Tunnel transistors with abrupt junctions | Hung H. Tran, Reinaldo Vega, Xiaobin Yuan | 2019-03-19 |
| 10170581 | FinFET with reduced parasitic capacitance | Veeraraghavan S. Basker, Sivananda K. Kanakasabapathy | 2019-01-01 |
| 10121789 | Self-aligned source/drain contacts | Praneet Adusumilli, Kangguo Cheng, Balasubramanian Pranatharthiharan, Shom Ponoth | 2018-11-06 |
| 10103226 | Method of fabricating tunnel transistors with abrupt junctions | Reinaldo Vega, Hung H. Tran, Xiaobin Yuan | 2018-10-16 |
| 10083865 | Partial spacer for increasing self aligned contact process margins | Ravikumar Ramachandran, Viraj Y. Sardesai, Reinaldo Vega | 2018-09-25 |
| 9997411 | Formation of metal resistor and e-fuse | Cung D. Tran, Viraj Y. Sardesai, Reinaldo Vega | 2018-06-12 |
| 9985109 | FinFET with reduced parasitic capacitance | Veeraraghavan S. Basker, Sivananda K. Kanakasabapathy | 2018-05-29 |
| 9985104 | Contact first replacement metal gate | Ravikumar Ramachandran, Viraj Y. Sardesai | 2018-05-29 |